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Journal Article
Advanced materials (Weinheim), ISSN 0935-9648, 2016, Volume 28, Issue 33, pp. 7106 - 7114
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2003, Volume 50, Issue 10, pp. 2002 - 2008
The transport properties of two-dimensional electron gas (2-DEG) at the AlGaN/GaN interface were studied by characterizing the 2-DEG mobility dependence on carrier concentration, n/sub s/, and temperature... 
Semiconductor heterojunctions | Charge carrier density | Charge carrier mobility | Aluminum compounds | JFETs | Magnetoresistance | Gallium compounds | Mobility | HFET | AlGaN | magnetoresistance | mobility | PHYSICS, APPLIED | DRIFT-MOBILITY | SCATTERING | ENGINEERING, ELECTRICAL & ELECTRONIC | Research | Gallium nitrides | Scattering | Charge | Aluminum gallium nitrides | Carrier density | Interface roughness | Heterostructures | Electron gas
Journal Article
Advanced materials (Weinheim), ISSN 0935-9648, 03/2007, Volume 19, Issue 5, pp. 688 - +
Journal Article