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IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2011, Volume 58, Issue 8, pp. 2197 - 2208
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 04/2017, Volume 9, Issue 15, pp. 13262 - 13268
In recent years, experimental demonstration of ferroelectric tunnel junctions (FTJ) based on perovskite tunnel barriers has been reported. However, integrating... 
Research | CMOS process | electronic band alignment | nanoscale characterization | tunneling electroresistance effect | ferroelectric tunnel junctions | PRECISE DETERMINATION | FILMS | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | ELECTRORESISTANCE
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 12/2011, Volume 46, Issue 12, pp. 2920 - 2932
A super-heterodyne receiver utilizing integrated high-Q filters to condition the desired signal to be digitized by a bandpass ADC at an IF of 110 MHz achieves... 
image-rejection filter | receiver | Capacitors | Receivers | zero-IF | impedance transformation | Radio frequency | N-path filtering | Bandpass filter | CMOS | process scalable | super-heterodyne | Band pass filters | Baseband filters | Impedance | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
2010 IEEE International Solid-State Circuits Conference - (ISSCC), ISSN 0193-6530, 02/2010, Volume 53, pp. 108 - 109
A 567 mm 2 processor on 45 nm CMOS integrates 48 IA-32 cores and 4 DDR3 channels in a 6×4 2D-mesh network. Cores communicate through message passing using 384... 
CMOS process
Conference Proceeding
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2006, Volume 53, Issue 5, pp. 1010 - 1020
Journal Article
IEEE Transactions on Circuits and Systems I: Regular Papers, ISSN 1549-8328, 08/2015, Volume 62, Issue 8, pp. 2035 - 2043
In this paper, split into Part I and II, the impact of variations on single-edge triggered flip-flops (FFs) is comparatively evaluated across a wide range of... 
process/voltage/temperature variations | VLSI | nanometer CMOS | Master-slave | energy-delay tradeoff | Clocking | Topology | performance | energy efficiency | Robustness | Delays | Transistors | flip-flops | Clocks | leakage | HIGH-PERFORMANCE | DESIGN | ENERGY | DELAY-AREA DOMAIN | ENGINEERING, ELECTRICAL & ELECTRONIC | CIRCUIT | Multivibrators | Logic design | Research | Complementary metal oxide semiconductors | Testing
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2015, Volume 62, Issue 9, pp. 2824 - 2829
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2016, Volume 37, Issue 11, pp. 1387 - 1390
To effectively protect integrated circuits from electrostatic discharge (ESD) damage, this letter proposes a silicon-controlled rectifier (SCR) device with low... 
Thyristors | silicon-controlled rectifier (SCR) | trigger voltage | Metals | Logic gates | Electrostatic discharge (ESD) | Electrostatic discharges | CMOS process | leakage current | Leakage currents | Clamps | parasitic capacitance | DESIGN | SILICON-CONTROLLED RECTIFIER | ENGINEERING, ELECTRICAL & ELECTRONIC | Electronics industry | Static electricity
Journal Article
Solid-State Electronics, ISSN 0038-1101, 11/2019, p. 107719
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 11/2018, Volume 28, Issue 11, pp. 1023 - 1025
This letter presents a novel subterahertz CMOS signal source with high output power. The proposed oscillators are mutually injected to align their frequencies... 
CMOS | subterahertz (subTHz) | oscillator | high output power | Harmonic analysis | CMOS technology | Transistors | high dc-to-RF efficiency | Oscillators | HIGH-POWER | ENGINEERING, ELECTRICAL & ELECTRONIC | Signal processing | State of the art | Energy dissipation | Tuning
Journal Article
Sensors (Switzerland), ISSN 1424-8220, 07/2018, Volume 18, Issue 7
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 02/2006, Volume 41, Issue 2, pp. 433 - 442
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 01/2008, Volume 43, Issue 1, pp. 69 - 77
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 12/2013, Volume 732, pp. 530 - 534
Truly monolithic pixel detectors were fabricated with 0.2μm SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle... 
Monolithic detector | SOI | CMOS
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 02/2012, Volume 20, Issue 2, pp. 319 - 332
Journal Article
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