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IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2011, Volume 58, Issue 8, pp. 2197 - 2208
Journal Article
2009, IEEE Press series on microelectronic systems, ISBN 9780471731726, Volume 12, xv, 624
A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS... 
Reliability | Metal oxide semiconductors, Complementary | Components, Circuits, Devices and Systems | Electricity | Technology | Microelectronics
Book
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 09/2010, Volume 45, Issue 9, pp. 1896 - 1905
Journal Article
IEEE Transactions on Antennas and Propagation, ISSN 0018-926X, 05/2012, Volume 60, Issue 5, pp. 2234 - 2241
Journal Article
ACS Nano, ISSN 1936-0851, 09/2014, Volume 8, Issue 9, pp. 8730 - 8745
The slow-down in traditional silicon complementary metal-oxide–semiconductor (CMOS) scaling (Moore’s law) has created an opportunity for a disruptive... 
post-CMOS | carbon nanotubes | logic | CMOS DEVICES | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | SELECTIVE DISPERSION | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | ARRAYS | DIAMETER | INTEGRATED-CIRCUITS | GROWTH | SEPARATION | ATOMIC LAYER DEPOSITION | ELECTRONICS
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 01/2015, Volume 50, Issue 1, pp. 170 - 177
A 128 Mb 0.07 μm 2 6T high-density SRAM bitcell with write-assist circuitry has been successfully implemented using 16 nm high-k metal gate FinFET technology.... 
Couplings | Random access memory | Metals | Bitcell | write-assist technique | FinFET | Logic gates | FinFETs | high-k metal gate | Timing | SRAM | Write-assist technique | VOLTAGE | DESIGN | POWER | CMOS TECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC | SCHEME | CHIP | CELL
Journal Article
Solid State Electronics, ISSN 0038-1101, 10/2015, Volume 112, pp. 56 - 67
Although Si MOS devices have dominated the integrated circuit applications over the four decades, it has been anticipated that the development of CMOS would... 
CMOS | MOSFET | High-k | Downsizing | FinFET | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 2011, Volume 650, Issue 1, pp. 158 - 162
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, pp. 269 - 271
This letter reports the first demonstration of gallium nitride (GaN) complementary metal-oxide-semi-conductor (CMOS) field-effect-transistor technology.... 
Inverter | CMOS | Selective Area Epitaxy | GaN | Logic gates | Transistor | Inverters | CMOS integrated circuits | Transistors | Gallium nitride | Gate Insulator | MOS devices | Gate insulator | Selective area epitaxy | selective area epitaxy | TRANSISTORS | CHANNEL | gate insulator | inverter | transistor | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article