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Scientific Reports, ISSN 2045-2322, 03/2017, Volume 7, Issue 1, p. 44627
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 07/2009, Volume 15, Issue 4, pp. 1028 - 1040
Journal Article
Journal of Power Sources, ISSN 0378-7753, 11/2018, Volume 405, pp. 70 - 79
Inverted perovskite solar cells (PSCs) have been introduced as better candidate for roll-to-roll printing and scale-up than their conventional configuration... 
Mixed-ion perovskite | Electron transporting layer (ETL) | Crystalline quality | Dimethyl sulfoxide (DMSO) vapor treatment
Journal Article
by Chen, WH and Qin, ZY and Tian, XY and Zhong, XH and Sun, ZH and Li, BK and Zheng, RS and Guo, Y and Wu, HL
MOLECULES, ISSN 1420-3049, 04/2019, Volume 24, Issue 8, p. 1562
In this report, the development of physical vapor transport (PVT) methods for bulk aluminum nitride (AlN) crystal growth is reviewed. Three modified PVT... 
SUBLIMATION GROWTH | crystalline quality | DIAMETER | dominant growth | GAN | BIOCHEMISTRY & MOLECULAR BIOLOGY | physical vapor transport | inverse temperature gradient | ALUMINUM NITRIDE | CHEMISTRY, MULTIDISCIPLINARY | bulk AlN crystal
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2015, Volume 118, Issue 11, p. 115304
Journal Article
Thin Solid Films, ISSN 0040-6090, 02/2017, Volume 624, pp. 167 - 174
In this study Cu2ZnSnSe4 (CZTSe) thin films were grown by a two-stage process that involved sputter deposition of a Cu/Sn/Zn/Cu metallic stack, annealing the... 
Two-stage method | Soft-annealing | Kesterite | Cu2ZnSnSe4 (CZTSe) | Sputtering | Thin film solar cells | CZTSe | ZnSnSe | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SULFURIZATION | ABSORBER LAYER | PULSED-LASER DEPOSITION | GROWTH | EFFICIENCY | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Thin Solid Films, ISSN 0040-6090, 10/2018, Volume 663, pp. 44 - 48
An approach of growing crack-free GaN-based InGaN-multiple quantum wells (MQWs) with emission at 365 nm on AlN template, instead of conventional GaN template,... 
Crack-free | Crystalline quality | Aluminum nitride template | Optical property | Gallium nitride | Indium gallium nitride | Multiple quantum wells | Atomic force microscopy | Nitrides | Gallium nitrate | Quantum wells | Optical properties | Aluminum compounds | Liquors | Indium | Chemical vapor deposition
Journal Article
Diamond & Related Materials, ISSN 0925-9635, 09/2015, Volume 58, pp. 221 - 225
High-quality type IIa diamond crystals measuring up to 12mm in diameter (8 to 10 carats) were successfully grown by the temperature gradient method at high... 
Crystal growth | Crystal defect | Synthetic diamond | High pressure and high temperature | Crystalline quality | PERFECTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2019, Volume 507, pp. 196 - 199
•AlN films grown on Si- and C-polar 6H-SiC substrates were investigated.•The substrates polarity is responsible for the different growth models of... 
Substrate polarity | Morphology | Growth mode | Crystalline quality | Nanotubes | Dislocations | PHYSICS, APPLIED | GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOVPE GROWTH | CRYSTALLOGRAPHY | LAYER | Vapor phase epitaxy | Silicon carbide | Three dimensional flow | Vapor phases | Silicon substrates | Polarity | Island growth | Epitaxial growth | High temperature | Aluminum nitride
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2014, Volume 104, Issue 3, p. 32104
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 12/2017, Volume 729, pp. 992 - 996
The reduction in the crystalline quality anisotropy and the in-plane strain for the non-polar a-plane GaN epi-layer with nano-scale island-like SiNx interlayer... 
Non-polar a-plane GaN | Nano-scale island-like SiNx interlayer | Crystalline quality anisotropy reduction | In-plane strain compensation | Nano-scale island-like SiN | interlayer | SAPPHIRE | QUANTUM-DOTS | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | GROWTH | CHEMISTRY, PHYSICAL | RAMAN
Journal Article