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Jpn J Appl Phys, ISSN 0021-4922, 2/2011, Volume 50, Issue 2, pp. 021001 - 021001-7
The potential modulation and interface states of Al 2 O 3 /Al 0.25 Ga 0.75 N/GaN structures prepared by atomic layer deposition (ALD) were characterized by... 
HFO2 | N-TYPE | PHYSICS, APPLIED | GAN | DIELECTRICS | GATE STRUCTURE | DEVICES | AL2O3 | SUPPRESSION | FIELD-EFFECT TRANSISTORS | ALGAN
Journal Article
Journal of Physics and Chemistry of Solids, ISSN 0022-3697, 04/2018, Volume 115, pp. 283 - 288
In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared... 
Photovoltaic | PbTe | GaP | Electron beam | Current–voltage | Capacitance–voltage | Heterojunction | THIN-FILMS | PHYSICS, CONDENSED MATTER | THERMOELECTRIC-MATERIALS | CHEMISTRY, MULTIDISCIPLINARY | EPITAXY | FLASH EVAPORATION | PHOTODETECTORS | GROWTH | DIODE-LASERS | SURFACE | Capacitance-voltage | Current-voltage | PHOTOVOLTAIC PROPERTIES | Thin films | Dielectric films | Electron microscopy | Methods
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2017, Volume 38, Issue 12, pp. 1696 - 1699
In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN heterostructures by using a two-junction capacitor model. First, we... 
p-GaN/AlGaN/GaN heterostructure | Capacitance-voltage characteristics | Capacitors | C-V characteristics | Logic gates | Wide band gap semiconductors | Aluminum gallium nitride | HEMTS | METAL | GAN | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 07/2012, Volume 112, Issue 2, p. 24521
Journal Article
Physica E: Low-dimensional Systems and Nanostructures, ISSN 1386-9477, 11/2015, Volume 74, pp. 505 - 509
An anthracene film has been deposited on an -type silicon to fabricate an Au/anthracene/ -Si junction device. The band gap of the anthracene film has been... 
Anthracene | Temperature | Capacitance–voltage characteristics | Organic film | Capacitance-voltage characteristics | PHYSICS, CONDENSED MATTER | NANOSCIENCE & NANOTECHNOLOGY | Silicon
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 05/2018, Volume 10, Issue 17, pp. 15240 - 15249
In the present work, we study the hysteretic behavior in the electric-field-dependent capacitance and the current characteristics of... 
Research | Capacitance−voltage characteristics | Interfacial coupling effect | Materials Science(all) | Resistive switching | UT-Hybrid-D | Metal−ferroelectric−semiconductor structures | Ferroelectric properties
Journal Article
JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN 0022-3727, 11/2019, Volume 52, Issue 45
Spatial and energy profiles of latent defects in Si substrate created during plasma processes were investigated based on a model prediction framework using... 
plasma process | PHYSICS, APPLIED | TRAPS | plasma process-induced damage | metal-oxide-semiconductor | SILICON | latent defect | defect profile | capacitance-voltage characteristic | LEVEL TRANSIENT SPECTROSCOPY | RADIATION-DAMAGE
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2017, Volume 38, Issue 6, pp. 818 - 821
This letter presents an experimental capacitance-voltage C-V analysis for Si p-tunnel FETs (TFETs) fabricated on ultrathin body at various frequencies and... 
Temperature measurement | TFETs | Si tunnel FET | Capacitance-voltage characteristics | Logic gates | miller capacitance | Capacitance | Silicon | Frequency measurement | MOSFETs | Predictions
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 2017, Volume 694, pp. 163 - 167
We report the results of the crystallization behaviour, phase change and structure of GeTe thin films to ascertain the role of the capacitance behaviour. In... 
Capacitance-voltage characteristics | Optical properties | Chalcogenide glasses | Vacuum deposition
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 2009, Volume 484, Issue 1, pp. 870 - 876
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 12/2018, Volume 550, pp. 68 - 74
Journal Article