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ACS Applied Materials & Interfaces, ISSN 1944-8244, 11/2017, Volume 9, Issue 45, pp. 39758 - 39770
Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical... 
Research | dielectric breakdown | CAFM | insulator | 2D materials | hexagonal boron nitride | SUPERIOR THERMAL-CONDUCTIVITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | TEMPERATURE-DEPENDENT RAMAN | NANOSCIENCE & NANOTECHNOLOGY | FIELD-EFFECT TRANSISTORS | FILMS | GROWTH | DEGRADATION | NANOSCALE | SIO2
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 06/2017, Volume 178, pp. 308 - 312
The time-dependent dielectric breakdown phenomenon (TDDB) has been investigated in a series of nominally identical MgO based magnetic tunnel junctions (MTJs)... 
Time-dependent dielectric breakdown | Clustering model | Magnetic tunnel junctions | Pulsed voltage endurance | MgO | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Analysis | Product development
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2016, Volume 63, Issue 2, pp. 755 - 759
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2017, Volume 76-77, pp. 87 - 91
Time dependent dielectric breakdown degrades the reliability of SRAM cache. A novel methodology to estimate SRAM cache reliability and performance is... 
Configuration | Time dependent dielectric breakdown (TDDB) | Reliability | Performance | SRAM | Monte Carlo simulation | GATE-OXIDE BREAKDOWN | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | MECHANISMS | ENGINEERING, ELECTRICAL & ELECTRONIC | IMPACT | BIAS TEMPERATURE INSTABILITY | Memory (Computers) | Monte Carlo method | Analysis
Journal Article
Solid State Electronics, ISSN 0038-1101, 11/2012, Volume 77, pp. 2 - 6
► Two high-κ gate dielectrics, HfLaO and HfZrLaO, of MOS were fabricated. ► Their electrical properties and TDDB characteristics were studied and compared. ►... 
Lifetime | HfLaO | HfZrLaO | Time dependent dielectric breakdown (TDDB) | HFO2 | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | FLAT-BAND VOLTAGE | ELECTRICAL-PROPERTIES | RELIABILITY | ENGINEERING, ELECTRICAL & ELECTRONIC | Circuit components | Electronic components industry | Dielectrics | Capacitors | Electric properties | Voltage | Hafnium oxide | Leakage current | Dielectric breakdown | Density | Gates
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2008, Volume 55, Issue 8, pp. 1830 - 1834
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 02/2015, Volume 55, Issue 2, pp. 308 - 317
Journal Article
Thin Solid Films, ISSN 0040-6090, 2011, Volume 520, Issue 1, pp. 662 - 666
Journal Article
by Keum, D and Kim, H
MICROMACHINES, ISSN 2072-666X, 11/2019, Volume 10, Issue 11, p. 723
In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed... 
ELECTRON-MOBILITY | time-dependent dielectric breakdown (TDDB) | reliability | NANOSCIENCE & NANOTECHNOLOGY | normally off | AlGaN/GaN | HIGH-VOLTAGE | INSTRUMENTS & INSTRUMENTATION | GAN | HEMTS | proton irradiation | CHARGE | SIO2 | time-dependent dielectric breakdown (tddb) | algan/gan
Journal Article
中国物理B:英文版, ISSN 1674-1056, 2015, Volume 24, Issue 11, pp. 464 - 467
A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce... 
电击穿特性 | MOSFET | PMOS | 金属栅 | 时间依赖性 | 沉积 | 等效氧化层厚度 | 退火技术 | time dependent dielectric breakdown | multi-deposition multi-annealing | high-k/metal gate | PHYSICS, MULTIDISCIPLINARY
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2019, Volume 66, Issue 11, pp. 4523 - 4534
Journal Article
Journal Article
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