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Nanotechnology, ISSN 0957-4484, 01/2019, Volume 30, Issue 2, p. 025203
We demonstrate single- and double-gate synaptic operations of a thin-film transistor (TFT) with double-gate stack consisting of an Al-top-gate/SiO /TaO /n-IGZO... 
IGZO | single-gate | tantalum oxide | double-gate | synaptic transistor
Journal Article
Physica E: Low-dimensional Systems and Nanostructures, ISSN 1386-9477, 10/2019, p. 113803
Journal Article
Proceedings of the IEEE, ISSN 0018-9219, 12/2010, Volume 98, Issue 12, pp. 2095 - 2110
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2019, Volume 126, Issue 10, p. 105705
The effects of contact geometry and specific contact resistivity on In0.53Ga0.47As (InGaAs) and silicon (Si) nanoscale (18 nm channel length) n-channel FinFETs... 
HFO2 | ELECTRON-DRIFT VELOCITY | CMOS | TRANSPORT | PHYSICS, APPLIED | DOUBLE-GATE | MOBILITY | SEMICONDUCTORS | TIME | CURRENTS | SIMULATION
Journal Article
Nano Letters, ISSN 1530-6984, 05/2006, Volume 6, Issue 5, pp. 973 - 977
Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub-100-nm single-crystalline Si... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | DOUBLE-GATE | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | MOSFETS | ARRAYS | NANOIMPRINT LITHOGRAPHY | CHANNEL | GROWTH | DEVICES | FABRICATION | FINFETS
Journal Article
Organic Electronics, ISSN 1566-1199, 10/2019, p. 105518
Journal Article
AIP Conference Proceedings, ISSN 0094-243X, 04/2018, Volume 1952, Issue 1
This paper demonstrates a Junction-less Double Gate n-p-n Impact ionization MOS transistor (JLDG n-IMOS) on a very light doped p-type silicon body. Device... 
impact ionization | Junction-less | charge plasma | avalanche breakdown | double gate
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 9/2019, Volume 66, Issue 10, pp. 1 - 6
In this article, we correlate various double-gate (DG) molybdenum disulfide (MoS₂) FET architectures with the contact resistance ( RC) and performance. We show... 
double-gate (DG) | FET | Field effect transistors | Metals | Logic gates | molybdenum disulfide (MoS₂) | Optical imaging | Contact resistance | Dielectrics | Sulfur | Molybdenum
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2007, Volume 54, Issue 7, pp. 1725 - 1733
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 10/2016, Volume 55, Issue 10, p. 104201
We verify that one-dimensional (1D) Gaussian expression is an appropriate approximation of the vertical doping profile, which is obtained by combining... 
PHYSICS, APPLIED | ULTRATHIN SOI MOSFETS | DOUBLE-GATE MOSFETS | FLUCTUATIONS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2013, Volume 60, Issue 12, pp. 4133 - 4139
The ultimate scaling limit of double-gate molybdenum disulfide (MoS2) field-effect transistors (FETs) with a monolayer thin body is examined and compared with... 
phonon scattering | monolayer molybdenum disulfide MoS | ultimate scaling limit | performance metrics | Double-gate field-effect transistors (FETs) | monolayer molybdenum disulfide MoS2 | PHYSICS, APPLIED | CRYSTALS | SINGLE-LAYER MOS2 | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 11/2019, Volume 135, p. 106290
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2014, Volume 61, Issue 6, pp. 2834 - 2838
Journal Article
Nano Letters, ISSN 1530-6984, 08/2010, Volume 10, Issue 8, pp. 2934 - 2938
A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1... 
Double-gate | biosensor | FinFET | avian influenza (AI) | sensitivity | field effect transistor | nanowire | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON NANOWIRES | NANOSCIENCE & NANOTECHNOLOGY | SENSORS | CHEMISTRY, MULTIDISCIPLINARY | ARRAYS | DNA | ELECTRICAL DETECTION | Biosensing Techniques | Nanowires
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2012, Volume 59, Issue 9, pp. 2284 - 2289
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2019, Volume 66, Issue 10, pp. 4126 - 4133
This article reports an analysis of the fringing capacitances of an ion-implanted double-gate (DG) junctionless (JL) field-effect transistors (FETs). The... 
Electric potential | Conformal mapping | depletion region | Doping | Logic gates | Capacitance | Boundary conditions | fringing electric field | junctionless (JL) double-gate (DG) | Semiconductor process modeling | field-effect transistor (FET)
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2019, Volume 66, Issue 10, pp. 4446 - 4452
This article reports on logic and memory functionality of vertically stacked bidirectional junctionless (BiJL) transistor, which can be operated as nMOS or... 
Electric potential | impact ionization | MOSFET | Bidirectional (Bi) | junctionless (JL) | Logic gates | Charge carrier processes | Silicon | Transistors | MOS devices | Switching circuits | double gate
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 04/2019, Volume 58, Issue SB, p. SBBB03
In this work, we report on the opportunities to enhance the retention time (RT) of an accumulation mode capacitorless DRAM (1T-DRAM) through appropriate... 
IONIZATION COEFFICIENTS | PHYSICS, APPLIED | DOUBLE-GATE | FET | MODE | SCALABILITY | CELL
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2011, Volume 32, Issue 2, pp. 125 - 127
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2018, Volume 65, Issue 7, pp. 2797 - 2803
This paper reports on the potential benefits of a vertically stacked n- and p-type junctionless (JL) transistor physically decoupled through an intermediate... 
MOS | junctionless (JL) | 1T-DRAM | capacitorless | CELLS | PHYSICS, APPLIED | DOUBLE-GATE | NANOWIRE TRANSISTORS | MODE | TIME | SOI | BULK | ENGINEERING, ELECTRICAL & ELECTRONIC | CMOS | DEVICES | SCALABILITY
Journal Article
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