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IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 175 - 177
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2010, Volume 31, Issue 1, pp. 68 - 70
A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using... 
Cutoff frequency | Doping | field-effect transistor (FET) | MOSFETs | Access resistance | graphene | Aluminum oxide | Radio frequency | Electrodes | dual gate | Voltage | radio frequency (RF) | Electrostatics | FETs | Immune system | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
INDIAN JOURNAL OF PHYSICS, ISSN 0973-1458, 02/2019, Volume 93, Issue 2, pp. 197 - 205
This study proposes a novel dual-material-gate dual-stacked-gate dielectrics gate-source overlap Ge FinFET and compares its characteristics with conventional... 
PHYSICS, MULTIDISCIPLINARY | Dual material gate | FinFET | Dual-stacked-gate dielectrics | Gate-source overlap | MOSFETS | DEPENDENCE | Germanium | Threshold voltage | Leakage current | Dielectrics | Transconductance
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 05/2016, Volume 26, Issue 18, pp. 3146 - 3153
As one of the emerging new transition‐metal dichalcogenides materials, molybdenum ditelluride (α‐MoTe2) is attracting much attention due to its optical and... 
α‐MoTe2 | h‐BN | non‐lithographic | graphene | dual‐gate field effect transistor | non-lithographic | dual-gate field effect transistor | α-MoTe | h-BN | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SPECTROSCOPY | MATERIALS SCIENCE, MULTIDISCIPLINARY | GRAPHENE | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | MOTE2 | CHEMISTRY, MULTIDISCIPLINARY | BAND-GAP
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2008, Volume 55, Issue 1, pp. 372 - 381
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 175 - 177
To fabricate gate recessed normally-off AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors, we have employed a novel SiNx/HfO2 dual... 
hafnium oxide | Insulators | Dielectrics | Leakage currents | Gallium nitride | plasma enhanced atomic layer deposition (PEALD) | metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) | silicon nitride | GaN | RF-sputtering | Logic gates | Hafnium compounds | Dual gate insulator | Aluminum gallium nitride | Transistors
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2017, Volume 64, Issue 3, pp. 960 - 968
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2016, Volume 63, Issue 2, pp. 573 - 577
A dual-gate multilayer MoS 2 FET with a standard backside gate and a nonstandard coplanar top gate is demonstrated and analyzed. The special feature of this... 
Electrodes | dual gate | Field effect transistors | 2-D MoS | coplanar gate | threshold voltage | Logic gates | Capacitance | Silicon | Dielectrics | Substrates | FETs | Threshold voltage | Dual gate | Coplanar gate | MONOLAYER MOS2 | PHYSICS, APPLIED | MOBILITY | LAYER MOS2 | GRAPHENE TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | ENHANCEMENT | 2-D MoS2 | THIN-FILM | TRANSPARENT
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2014, Volume 35, Issue 4, pp. 461 - 463
Owing to bulk-accumulation, dual-gate (DG) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with top- and bottom-gates electrically... 
dual gate | a-IGZO TFTs | Logic gates | Capacitance | Inverters | inverter | Thin film transistors | ring oscillator | Switching circuits | Ring oscillator | OXIDE | PERFORMANCE | THIN-FILM TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2018, Volume 65, Issue 7, pp. 3026 - 3032
Journal Article
Journal of Computational Electronics, ISSN 1569-8025, 06/2018, Volume 17, Issue 2, pp. 663 - 669
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2018, Volume 65, Issue 1, pp. 3 - 10
Journal Article
Journal of the Society for Information Display, ISSN 1071-0922, 06/2017, Volume 25, Issue 6, pp. 349 - 355
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2012, Volume 59, Issue 7, pp. 1829 - 1836
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2016, Volume 63, Issue 5, pp. 2190 - 2196
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2010, Volume 31, Issue 1, pp. 68 - 70
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping.... 
Radio frequency (RF) | Field-effect transistor (FET) | Graphene | Dual gate | Access resistance | Physics - Mesoscale and Nanoscale Physics
Journal Article
Transactions on Electrical and Electronic Materials, ISSN 1229-7607, 4/2019, Volume 20, Issue 2, pp. 132 - 140
In this exposition, we have proposed the Dual Material Gate Double Gate Impact Ionization Metal Oxide Semiconductor (DMG DG IMOS) device with a gate engineered... 
Materials Science | Impact ionization MOS (IMOS) | Gate engineering and gate stack | Optical and Electronic Materials | Electronics and Microelectronics, Instrumentation | Analog and RF parameters | Dual Material Gate Double Gate IMOS | 전기공학
Journal Article
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