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IEEE Transactions on Nuclear Science, ISSN 0018-9499, 07/2019, Volume 66, Issue 7, pp. 1612 - 1619
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 07/2019, Volume 66, Issue 7, pp. 1557 - 1565
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 12/2019, Volume 103, p. 113499
Space-related electronics contain different types of oxide isolations which are the crucial factor resulting in device degradation and failure. Previous... 
EHPs generation | Holes trapping | ELDRS | Protons transportation | Oxide isolation | SiGe HBTs
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 05/2018, Volume 84, pp. 105 - 111
This paper evaluates enhanced low dose rate sensitivity (ELDRS) in Silicon–Germanium heterojunction bipolar transistors (SiGe HBTs) which are isolated by LOCOS... 
SiGe HBT | ELDRS | Bias conditions | Gamma irradiation
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2015, Volume 62, Issue 6, pp. 2476 - 2481
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 08/2016, Volume 63, Issue 4, pp. 2065 - 2071
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 06/2013, Volume 60, Issue 3, pp. 1706 - 1730
Journal Article
by Zhao, JY and Yang, JQ and Dong, L and Li, XJ
ACTA PHYSICA SINICA, ISSN 1000-3290, 03/2019, Volume 68, Issue 6
Bipolar devices are extremely sensitive to ionization effects, and their low dose rate radiation damage is more serious than their high dose rate radiation... 
SPACE | ELDRS | ionizing damage | PHYSICS, MULTIDISCIPLINARY | bipolar junction transistor | hydrogen | enhanced low dose rate sensitivity | BIPOLAR
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 10/2019, Volume 940, pp. 307 - 312
This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation... 
RADFET | ELDRS | Dosimeter | Simulation | Dose rate effects | Total dose effects | TRANSISTOR | SENSITIVITY | PHYSICS, NUCLEAR | SIMULATION | IRRADIATION | INSTRUMENTS & INSTRUMENTATION | NUCLEAR SCIENCE & TECHNOLOGY | Simulation Dosimeter | PHYSICS, PARTICLES & FIELDS | Oxides | Dielectrics | Transistors | Analysis | Radiation
Journal Article
Advanced Materials Research, ISSN 1022-6680, 08/2014, Volume 1016, pp. 484 - 489
The technique for low dose rate response prediction, based on the combination of low, room and elevated temperature irradiation was described. The possibility... 
ELDRS | Conversion model | Fitting parameters | Interface trap
Journal Article
by Zhang, JX and Guo, Q and Guo, HX and Lu, W and He, CH and Wang, X and Li, P and Wen, L
MICROELECTRONICS RELIABILITY, ISSN 0026-2714, 05/2018, Volume 84, pp. 105 - 111
This paper evaluates enhanced low dose rate sensitivity (ELDRS) in Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) which are isolated by LOCOS... 
ELDRS | Gamma irradiation | PHYSICS, APPLIED | HETEROJUNCTION BIPOLAR-TRANSISTORS | SiGe HBT | Bias conditions | NANOSCIENCE & NANOTECHNOLOGY | RADIATION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2018, Volume 88-90, pp. 961 - 964
The radiation-induced change in input bias current of bipolar input stage of BiCMOS operational amplifiers susceptible to enhanced low dose rate sensitivity... 
Operational amplifiers | Irradiation | Low dose rate | Elevated temperature | Enhancement factor | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | GAIN DEGRADATION | PHYSICAL MODEL | ENGINEERING, ELECTRICAL & ELECTRONIC | ELDRS | DEVICES | BIPOLAR JUNCTION TRANSISTORS
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 01/2019, Volume 66, Issue 1, pp. 163 - 169
Journal Article
Advanced Materials Research, ISSN 1022-6680, 08/2014, Volume 1016, pp. 478 - 483
The physical model, procedure of fitting parameter extraction and experimental study of the contribution of radiation induced charge neutralization (RICN)... 
ELDRS | Conversion model | Fitting parameters | RICN | Interface trap
Journal Article
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