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Solid State Electronics, ISSN 0038-1101, 03/2019, Volume 153, pp. 1 - 7
•A method to asses the current crwoding as a function bias in SiGe HBTs is described.•We applied it to a batch of HBTs with different base technological... 
Effective base emitter junction width | Current-crowding | Apparent base resistance | Silicon germanium heterojunction bipolar transistors | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2016, Volume 63, Issue 11, pp. 4409 - 4415
Journal Article
Solar Energy, ISSN 0038-092X, 05/2019, Volume 184, pp. 664 - 671
[Display omitted] •CBTSSe/CdS/ACZTSe HBT architecture-based solar cell is proposed.•The maximum efficiency is found to be 21.63% including recombination... 
Solar cell | Chalcogenides | ACZTSe | Kesterite | CBTSSe | Heterojunction | FILMS | ENERGY & FUELS | TIN OXIDE | GROWTH | EFFICIENCY | Solar cells | Optoelectronics | Recombination | Short circuit currents | Architecture | Semiconductor devices | Circuits | Radiative recombination | Open circuit voltage | Fabrication | Thickness | Photovoltaic cells | Efficiency | Heterojunction bipolar transistors | Emitters | Transistors | Photonic band gaps
Journal Article
Transactions on Electrical and Electronic Materials, ISSN 1229-7607, 2/2019, Volume 20, Issue 1, pp. 7 - 11
In this work, two thermal annealing processes (furnace and laser annealing) are adopted to obtain < 2.0 V collector-emitter saturation voltage (Vce(sat)), an... 
Insulated gate bipolar transistors | Collector-emitter saturation voltage | Materials Science | Furnace annealing | Optical and Electronic Materials | Electronics and Microelectronics, Instrumentation | Laser annealing | Electrical die sorting | 전기공학
Journal Article
by Zhu, C and Andrei, P
AIP Advances, ISSN 2158-3226, 09/2019, Volume 9, Issue 9, pp. 95301 - 095301-11
Journal Article
IEICE Electronics Express, 02/2019, Volume 16, Issue 3, p. 20181125
This letter presents the current-gain and high-frequency characteristics of double heterojunction bipolar transistors (DHBTs) consisting of an n-InGaP emitter,... 
Integrated circuits | Electric potential | Semiconductor devices | Electrical resistivity | Breakdown | Heterojunction bipolar transistors | Ultrasonic testing | Emitters | Transistors | Base metal
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2010, Volume 57, Issue 11, pp. 2964 - 2969
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2009, Volume 30, Issue 11, pp. 1119 - 1121
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 07/2010, Volume 25, Issue 7, pp. 075002 - 075002
In this paper, elimination of current blocking for the temperature range 77 K to 400 K is experimentally demonstrated for all ternary InAlAs-InGaAs-InAlAs... 
PHYSICS, CONDENSED MATTER | INP/INGAAS HBTS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ENGINEERING, ELECTRICAL & ELECTRONIC | Collectors | Quaternary alloys | Semiconductor devices | Semiconductors | Thermionic emission | Superlattices | Doping | Heterojunction bipolar transistors | Grading
Journal Article
Russian Microelectronics, ISSN 1063-7397, 11/2018, Volume 47, Issue 7, pp. 479 - 482
High-speed broadband analog integrated circuits based on a complimentary bipolar technology are widely used in modern equipment. The speed of these circuits is... 
complementary bipolar technology | operational amplifiers | Engineering | device-technological modeling | and TCAD | Electrical Engineering | Broadband transmission | Nitrides | Embedded systems | Amplifiers (Electronics) | Transistors
Journal Article
Russian Microelectronics, ISSN 1063-7397, 11/2018, Volume 47, Issue 7, pp. 472 - 478
The influence of temperature on the most important electrical parameters of a complementary bipolar pair of vertical transistors is numerically investigated in... 
Engineering | Early voltage | thermodynamic model | collector–emitter breakdown voltage | TCAD Sentaurus | and current amplification factor | Electrical Engineering | complementary vertical n–p–n and p–n–p transistors | Circuit components | Thermodynamics | Transistors | Analysis | Electric properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2005, Volume 86, Issue 15, pp. 152101 - 152101-3
Pseudomorphic In P ∕ In Ga As heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6%... 
EMITTER | PHYSICS, APPLIED | INP/INGAAS SHBTS | F(T)
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2001, Volume 22, Issue 3, pp. 113 - 115
Journal Article
中国物理快报:英文版, ISSN 0256-307X, 2015, Volume 32, Issue 7, pp. 175 - 178
A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated.... 
最高振荡频率 | 双异质结双极晶体管 | 共发射极 | InGaAs/InP | GHz | 输入电流 | 基础 | 发射技术 | Amplification | k factors | Semiconductor devices | Indium phosphides | Heterojunction bipolar transistors | High frequencies | Emitters | Gain
Journal Article
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