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physica status solidi c, ISSN 1862-6351, 12/2017, Volume 14, Issue 12, p. n/a
To stack Ge quantum dots (QDs) in a multilayer structure without undesirable enlargement of the QDs, the effects of both Si1−xCx spacer on a strain... 
quantum dots | germanium | group‐IV semiconductor | epitaxial growth | strain compensation | group-IV semiconductor | Mediation | Analysis | Strain analysis | Quantum dots | Silicon substrates | Germanium | Embedded structures | Enlargement
Journal Article
ACS Nano, ISSN 1936-0851, 07/2011, Volume 5, Issue 7, pp. 5627 - 5634
Journal Article
Journal Article
ACS Nano, ISSN 1936-0851, 05/2018, Volume 12, Issue 5, pp. 4853 - 4860
Atomic substitution offers an important route to achieve compositionally engineered two-dimensional nanostructures and their heterostructures. Despite the... 
strain | two-dimensional material | composition engineering | atomic substitution | mechanism | MOS2 | EPITAXIAL-GROWTH | MATERIALS SCIENCE, MULTIDISCIPLINARY | GRAPHENE | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | MONOLAYERS | EVOLUTION
Journal Article
by Wang, J and Misra, A
Current Opinion in Solid State & Materials Science, ISSN 1359-0286, 02/2014, Volume 18, Issue 1, pp. 19 - 28
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 10/2018, Volume 51, Issue 5, pp. 1387 - 1395
Journal Article