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1. Full Text Black Phosphorus: Avalanche Carrier Multiplication in Multilayer Black Phosphorus and Avalanche Photodetector (Small 38/2019)
by Jia, Jingyuan and Jeon, Jaeho and Park, Jin‐Hong and Lee, Byoung Hun and Hwang, Euyheon and Lee, Sungjoo
Small (Weinheim an der Bergstrasse, Germany), ISSN 1613-6810, 09/2019, Volume 15, Issue 38, pp. 1970203 - n/a
avalanche photodetectors | Au nanoparticles | black phosphorus | plasmonic effects | Nanoparticles | Gold | Multilayers | Multiplication | Noise sensitivity | Power consumption | Photometers | Optical communication | Phosphorus | Electron avalanche | Sensitivity enhancement | Electric fields
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2. Full Text 60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K
by Ji, Dong and Ercan, Burcu and Benson, Garrett and Newaz, A. K. M and Chowdhury, Srabanti
Applied physics letters, ISSN 0003-6951, 05/2020, Volume 116, Issue 21, p. 211102
Electrical properties | Gallium nitrides | Positive temperature coefficient | Electroluminescence | Electron avalanche | High temperature | Photodiodes | Substrates | Industry standards | Avalanche diodes | Optical properties | Dark current | Breakdown | High gain | Robustness
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3. Full Text Avalanche Carrier Multiplication in Multilayer Black Phosphorus and Avalanche Photodetector
by Jia, Jingyuan and Jeon, Jaeho and Park, Jin‐Hong and Lee, Byoung Hun and Hwang, Euyheon and Lee, Sungjoo
Small (Weinheim an der Bergstrasse, Germany), ISSN 1613-6810, 09/2019, Volume 15, Issue 38, pp. e1805352 - n/a
avalanche photodetectors | Au nanoparticles | black phosphorus | plasmonic effects | Materials Science | Materials Science, Multidisciplinary | Physics, Condensed Matter | Science & Technology - Other Topics | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Physical Sciences | Chemistry | Nanoscience & Nanotechnology | Technology | Chemistry, Multidisciplinary | Semiconductors | Electric fields | Imaging systems | Gold | Multiplication | Semiconductor materials | Electromagnetic absorption | Photometers | Phosphorus | Electron avalanche | Nanoparticles | Multilayers | Noise sensitivity | Quantum efficiency | Power consumption | Efficiency | Dark current | Optical communication | Signal to noise ratio | Index Medicus
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4. Full Text AlInAsSb/GaSb staircase avalanche photodiode
by Ren, Min and Maddox, Scott and Chen, Yaojia and Woodson, Madison and Campbell, Joe C and Bank, Seth
Applied physics letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 8, p. 81101
Physical Sciences | Physics | Science & Technology | Physics, Applied | Lattice matching | Conduction bands | Multiplication | Gallium antimonides | Avalanche diodes | Dynodes | Photomultiplier tubes | Electron avalanche | Photodiodes | Offsets | Operating temperature
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5. Full Text Double Avalanche Injection in Diode Avalanche Sharpeners
by Ivanov, M. S and Podolska, N. I and Rodin, P. B
Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, 03/2020, Volume 54, Issue 3, pp. 345 - 349
Physics, Condensed Matter | Physical Sciences | Physics | Science & Technology | Computer simulation | Avalanche diodes | Current distribution | Sharpening | Electron avalanche | Diodes | Voltage pulses
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6. Full Text Dark Current Transport and Avalanche Mechanism in HgCdTe Electron-Avalanche Photodiodes
by Wei-Cheng Qiu and Wei-Da Hu and Lu Chen and Chun Lin and Xiang-Ai Cheng and Xiao-Shuang Chen and Wei Lu
IEEE transactions on electron devices, ISSN 0018-9383, 06/2015, Volume 62, Issue 6, pp. 1926 - 1931
PIN photodiodes | Dark current transport | infrared detectors | Doping | Dark current | Tunneling | Charge carrier processes | Impact ionization | device simulation | Junctions | HgCdTe electron avalanche photodiodes (e-APDs) | Infrared detectors | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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7. Full Text Influencing Sources for Dark Current Transport and Avalanche Mechanisms in Planar and Mesa HgCdTe p-i-n Electron-Avalanche Photodiodes
by Li, Qing and He, Jiale and Hu, Weida and Chen, Lu and Chen, Xiaoshuang and Lu, Wei
IEEE transactions on electron devices, ISSN 0018-9383, 02/2018, Volume 65, Issue 2, pp. 572 - 576
II-VI semiconductor materials | PIN photodiodes | infrared detectors | Doping | Dark current | device simulation | dark current transport | Junctions | HgCdTe electron-avalanche photodiodes (e-APDs) | Cadmium compounds | HgCdTe electron-Avalanche photodiodes (e-APDs) | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Semiconductor doping | Research
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8. Full Text Redox-Dependent Franck–Condon Blockade and Avalanche Transport in a Graphene–Fullerene Single-Molecule Transistor
by Lau, Chit Siong and Sadeghi, Hatef and Rogers, Gregory and Sangtarash, Sara and Dallas, Panagiotis and Porfyrakis, Kyriakos and Warner, Jamie and Lambert, Colin J and Briggs, G. Andrew D and Mol, Jan A
Nano letters, ISSN 1530-6984, 01/2016, Volume 16, Issue 1, pp. 170 - 176
avalanche transport | electron-vibron coupling | Franck-Condon blockade | graphene | Single-molecule electronics | Materials Science | Materials Science, Multidisciplinary | Physics, Condensed Matter | Science & Technology - Other Topics | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Physical Sciences | Chemistry | Nanoscience & Nanotechnology | Technology | Chemistry, Multidisciplinary
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9. Full Text Opto-electronic modeling of light emission from avalanche-mode silicon p + n junctions
by Dutta, Satadal and Hueting, Raymond J. E and Annema, Anne-Johan and Qi, Lin and Nanver, Lis K and Schmitz, Jurriaan
Journal of applied physics, ISSN 0021-8979, 09/2015, Volume 118, Issue 11, p. 114506
Physical Sciences | Physics | Science & Technology | Physics, Applied | P-N junctions | Silicon | Electric fields | Analysis | Optical properties | Electric properties | Optoelectronics | Spectra | Diodes | Photon avalanches | Boron | Light emission | Spatial distribution | Emission spectra | Breakdown | Modelling | Electron energy | Electrical junctions | Photon emission
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10. Full Text Parameters of a runaway electron avalanche
by Oreshkin, E. V and Barengolts, S. A and Oreshkin, V. I and Mesyats, G. A
Physics of plasmas, ISSN 1070-664X, 10/2017, Volume 24, Issue 10, p. 103505
Physical Sciences | Physics, Fluids & Plasmas | Physics | Science & Technology | Electron avalanche | Gas discharges | Propagation velocity | Parameters | Computer simulation | Avalanches
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11. Full Text GaN Vertical p-i-n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation
by De Santi, Carlo and Fabris, Elena and Meneghesso, Gaudenzio and Zanoni, Enrico and Meneghini, Matteo
IEEE electron device letters, ISSN 0741-3106, 09/2020, Volume 41, Issue 9, pp. 1300 - 1303
Degradation | Resistance | Electron traps | vertical diode | Voltage measurement | Avalanche conduction | Gallium nitride | Stress | Stress measurement | charge trapping | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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12. Full Text The HgCdTe electron avalanche photodiode
by Beck, J and Wan, C and Kinch, M and Robinson, J and Mitra, P and Scritchfield, R and Ma, F and Campbell, J
Journal of electronic materials, ISSN 0361-5235, 6/2006, Volume 35, Issue 6, pp. 1166 - 1173
avalanche photodiode | Infrared | bandwidth | Optical and Electronic Materials | Electronics and Microelectronics, Instrumentation | Solid State Physics and Spectroscopy | Chemistry | avalanche gain | Monte Carlo simulations | APD | mercury cadmium telluride | excess noise factor | Characterization and Evaluation of Materials | HgCdTe | ionization coefficient | Ionization coefficient | Bandwidth | Avalanche gain | Mercury cadmium telluride | Avalanche photodiode | Excess noise factor | Electronics | Applied sciences | Optoelectronic devices | Photodiodes; phototransistors; photoresistors | Exact sciences and technology | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Monte Carlo method | Knowledge-based systems | Materials science | Physics | Electrons
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13. Full Text Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration
by Dong, Yuan and Liang, Gengchiau and Yeo, Yee-Chia and Wang, Wei and Xu, Xin and Gong, Xiao and Lei, Dian and Zhou, Qian and Xu, Zhe and Loke, Wan Khai and Yoon, Soon-Fatt
IEEE transactions on electron devices, ISSN 0018-9383, 01/2015, Volume 62, Issue 1, pp. 128 - 135
Temperature dependence | Avalanche photodiode (APD) | germanium-tin | Absorption | Microscopy | Avalanche photodiodes | Tin | Silicon | near-infrared (NIR) photodetection | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Tin compounds | Atomic force microscopy | Germanium | Usage | Electron microscopy | Optical properties
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14. Full Text Adjoint method and runaway electron avalanche
by Liu, Chang and Brennan, Dylan P and Boozer, Allen H and Bhattacharjee, Amitava and Princeton Plasma Physics Lab. (PPPL), Princeton, NJ (United States)
Plasma physics and controlled fusion, ISSN 0741-3335, 12/2016, Volume 59, Issue 2, p. 24003
runaway electron | tokamak disruption | magnetic fusion | adjoint method | method | Physical Sciences | Physics, Fluids & Plasmas | Physics | Science & Technology | acceleration | tokamaks | 70 PLASMA PHYSICS AND FUSION TECHNOLOGY | synchrotron-radiation | growth-rate | plasma
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15. Full Text Performance of Graded Bandgap HgCdTe Avalanche Photodiode
by Singh, Anand and Shukla, A. K and Pal, Ravinder
IEEE transactions on electron devices, ISSN 0018-9383, 03/2017, Volume 64, Issue 3, pp. 1146 - 1152
Photonic band gap | II-VI semiconductor materials | Avalanche photodiodes | Phonons | Bandwidth | Dark current | HgCdTe | Mathematical model | electron-injection avalanche photodiode (e-APD) | Cadmium compounds | gain | Usage | Mathematical models | Research | Chemical properties | Electric fields | Mercury compounds | Electric properties | Quantum efficiency | Photodiodes | Carrier transport
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16. Full Text Electron avalanche on a dielectric-vacuum interface
by Lauer, Eugene J and Lauer, Carl J
IEEE transactions on dielectrics and electrical insulation, ISSN 1070-9878, 04/2017, Volume 24, Issue 2, pp. 1295 - 1299
dielectric flashover | Numerical analysis | linear accelerator | Flashover | Dielectric breakdown | triple junction | Linear accelerators | electron avalanche | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Breakdown (Electricity) | Usage | Research | Electron avalanche | Mathematical models | Avalanches
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17. Full Text Toroidal effect on runaway vortex and avalanche growth rate
by Guo, Zehua and Mcdevitt, Chris and Tang, Xianzhu
Physics of plasmas, ISSN 1070-664X, 08/2019, Volume 26, Issue 8, p. 82503
Physical Sciences | Physics, Fluids & Plasmas | Physics | Science & Technology | Damping | Transit time | Computer simulation | Momentum | Tokamak devices | Electron avalanche | Fluxes | Relativistic effects | Geometry | Trapping | Vortices | Relativism | Plasmas | Synchrotron radiation
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