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Applied Physics Letters, ISSN 0003-6951, 2009, Volume 95, Issue 26, p. 262107
Ge-based devices, currently being pursued as replacement of their Si counterparts, typically contain a germanium oxide layer next to the substrate. Here we... 
AUGMENTED-WAVE METHOD | PHYSICS, APPLIED | defect states | MOS DEVICES | passivation | germanium | MOSFETS | elemental semiconductors | HYDROGEN | ab initio calculations | interface states | semiconductor-insulator boundaries | dangling bonds | germanium compounds | interface roughness
Journal Article
Materials Research Bulletin, ISSN 0025-5408, 07/2018, Volume 103, pp. 247 - 258
[Display omitted] •TiO2/BiOIO3 photocatalysts were prepared for the first time.•Synergistic effect of surface defect and interface heterostructure on... 
TiO2/BiOIO3 | Interface heterostructure | Surface defect | Mercury | OXIDATION | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSHEETS | HYDROTHERMAL SYNTHESIS | VISIBLE-LIGHT | NANOPARTICLES | ELEMENTAL MERCURY | OXYGEN VACANCY | REMOVAL | FABRICATION
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2009, Volume 94, Issue 10, pp. 101914 - 101914-3
A model of the defect formation at the bonding interface upon annealing in silicon wafer bonding is proposed in this paper. It is shown that the formation of... 
elemental semiconductors | wafer bonding | HYDROGEN | PRESSURE | PHYSICS, APPLIED | defect states | silicon | voids (solid) | solubility | ON-INSULATOR | annealing
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2016, Volume 119, Issue 21, p. 215102
We discuss about computer experiments based on nonequilibrium molecular dynamics simulations providing evidence that thermal rectification can be obtained in... 
MOLECULAR-DYNAMICS | PHYSICS, APPLIED | NANORIBBONS | RECTIFIER | Silicon compounds | Thermal properties | Molecular simulation | Usage | Analysis | Molecular dynamics | Electric properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2010, Volume 96, Issue 25, pp. 252102 - 252102-3
We analyze the dependence of the interface defect density D it in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions on the microscopic properties of... 
PHYSICS, APPLIED | defect states | interface structure | MECHANISM | photoelectron spectra | hydrogen | annealing | hydrogen bonds | DENSITY | elemental semiconductors | semiconductor thin films | silicon | SPECTROSCOPY | A-SI-H | infrared spectra | semiconductor heterojunctions
Journal Article
Applied Catalysis B: Environmental, ISSN 0926-3373, 08/2016, Volume 191, pp. 29 - 41
[Display omitted] •Defects decorated with oxygenated functional groups on carbon nanotubes wall.•Carbon based as metal-free catalyst for the catalytic... 
Acid treatment | Selective oxidation of H2S | N-CNTs | HNO3 | CNTs oxidized | HNO | MECHANISM | CHEMISTRY, PHYSICAL | SILICON-CARBIDE | HIGHLY EFFICIENT | ELEMENTAL SULFUR | FUNCTIONALIZATION | ENGINEERING, CHEMICAL | DEHYDROGENATION | TEMPERATURE | ENGINEERING, ENVIRONMENTAL | SURFACE | GAS | N-HEXANE
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 05/2009, Volume 79, Issue 19
We present calculations predicting that defects at the surface of semiconductor nanocrystals have a strong influence on the dynamics of hot carriers after... 
PBSE | PHYSICS, CONDENSED MATTER | STATES | defect states | MULTIPLE EXCITON GENERATION | MULTIPLICATION | impact ionisation | CDSE NANOCRYSTALS | TIGHT-BINDING | photoexcitation | deep levels | nanostructured materials | ELECTRON RELAXATION | elemental semiconductors | COLLOIDAL QUANTUM DOTS | POROUS SILICON | carrier lifetime | silicon | hot carriers | LUMINESCENCE | phonons
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2009, Volume 94, Issue 14, p. 142903
High quality GeO2 dielectrics were prepared on Ge(001) surface by direct atomic source oxidation. The band alignments have been studied by using high... 
valence bands | PHYSICS, APPLIED | oxidation | dielectric materials | electronic density of states | germanium | INITIO MOLECULAR-DYNAMICS | elemental semiconductors | vacancies (crystal) | interface states | semiconductor-insulator boundaries | germanium compounds | conduction bands | X-ray photoelectron spectra | SIO2
Journal Article
Journal of Applied Physics, ISSN 1089-7550, 2015, Volume 117, Issue 20, p. 205901
This study uses high-temperature nanoindentation coupled with in situ electrical measurements to investigate the temperature dependence (25-200 degrees C) of... 
Condensed Matter Physics | nanoindentation | solid-state phase transformations | Physics | Fysik | elemental semiconductors | Physical Sciences | Naturvetenskap | silicon | optical microscopy | crystal structure | Den kondenserade materiens fysik | deformation | Natural Sciences | crystal defects
Journal Article
Journal of Chemical Physics, ISSN 0021-9606, 2009, Volume 131, Issue 23, p. 234706
Journal Article
Journal of Physics: Condensed Matter, ISSN 0953-8984, 01/2008, Volume 20, Issue 4, pp. 045217 - 045217 (4)
Coincidence Doppler broadening of the positron annihilation technique has been employed to identify the defects in thermally annealed 'as-received' ZnO and... 
ROOM-TEMPERATURE | PHYSICS, CONDENSED MATTER | ORIGIN | TEMPERATURE FERROMAGNETISM | MN-DOPED ZNO | ELEMENTAL SPECIFICITY
Journal Article
Acta Crystallographica Section A, ISSN 2053-2733, 11/2014, Volume 70, Issue 6, pp. 521 - 523
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2010, Volume 96, Issue 19, pp. 193112 - 193112-3
Using electron paramagnetic resonance, we find that vacuum annealing at 200 ° C leads to a significant reduction in the silicon dangling bond (Si-db) defect... 
photoconductivity | ELECTRON-SPIN-RESONANCE | PHYSICS, APPLIED | SOLAR-CELLS | AMORPHOUS-SILICON | MICROWAVE REACTOR | MECHANISM | etching | photothermal spectroscopy | NANOCRYSTALS | annealing | elemental semiconductors | semiconductor thin films | nanoparticles | silicon | paramagnetic resonance | silicon compounds | SURFACES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2009, Volume 95, Issue 18, pp. 182108 - 182108-3
We present postdeposition annealing experiments on undoped amorphous-/n-type crystalline silicon [(i)a-Si:H/(n)c-Si/(i)a-Si:H] heterostructures used as... 
PHYSICS, APPLIED | passivation | annealing | bonds (chemical) | microwave heating | elemental semiconductors | semiconductor thin films | carrier lifetime | silicon | plasma CVD | amorphous semiconductors | infrared spectra | semiconductor heterojunctions | solar cells
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 02/2009, Volume 79, Issue 7
Journal Article
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