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Solid-State Electronics, ISSN 0038-1101, 03/2016, Volume 117, pp. 170 - 184
Ultra-low power operation and extreme energy efficiency are strong requirements for a number of high-growth application areas, such as E-health, Internet of... 
Multi-core architectures | FD-SOI | Body biasing | Near-threshold computing | Temperature compensation | Ultra-low-power devices | CORE | PHYSICS, CONDENSED MATTER | VOLTAGE | PHYSICS, APPLIED | PROCESSOR | ENGINEERING, ELECTRICAL & ELECTRONIC | Integrated circuits | Energy efficiency | Medical informatics | Semiconductor chips
Journal Article
IEEE Transactions on Circuits and Systems I: Regular Papers, ISSN 1549-8328, 04/2017, Volume 64, Issue 4, pp. 847 - 857
In the upcoming internet of things (IoT) era, spin transfer torque magnetic tunnel junction (STT-MTJ) based non-volatile (NV) memory and circuits for IoT nodes... 
Resistance | MTJ | approximate computing | Switches | Writing | FD-SOI | Robustness | Sensors | Transistors | ultra-low power | Non-volatile logic-in-memory (NV-LIM) | Magnetic tunneling | FLIP-FLOP | MAGNETIC TUNNEL-JUNCTION | RELIABILITY | COMPACT MODEL | ENGINEERING, ELECTRICAL & ELECTRONIC | Robust statistics | Usage | Magnetic tunnel junctions | Research | Logic circuits | Tunnel junctions | Flip-flops
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 10/2018, Volume 57, Issue 10, p. 1002
Silicon-on-insulator (SOI) technology provides an optimal structure for realizing monolithic radiation imaging devices as it involves the preparation of a... 
FD-SOI TECHNOLOGY | DETECTORS | PHYSICS, APPLIED | Radiation hardening | CMOS | Silicon | Sensors | Floating structures | Pixels
Journal Article
Solid-State Electronics, ISSN 0038-1101, 02/2017, Volume 128, pp. 172 - 179
We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the... 
CMOS | MOSFET | Gated diode | LBJT | Thyristor | ESD | Electrostatic discharges | FD-SOI | SOI | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Solid-State Electronics, ISSN 0038-1101, 03/2016, Volume 117, pp. 130 - 137
This work provides a detailed study of 28 nm fully-depleted silicon-on-insulator (FD-SOI) planar ultra-thin body and BOX (UTBB) MOSFETs for high frequency... 
RF figures of merit (FoM) | UTBB | FD-SOI MOSFET | System-on-Chip (SoC) | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ANALOG | PERFORMANCE | PARAMETERS | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | VIRTUAL SUBSTRATE | EXTRACTION | DEVICES | OPTIMIZATION | Transistors | Embedded systems
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2019, Volume 40, Issue 5, pp. 738 - 741
For the first time, a novel active pixel sensor (APS) with 22 nm fully depleted silicon-on-insulator (FD-SOI) technology is experimentally demonstrated. The... 
Image sensors | MOSFET | Sensitivity | 22 nm technology | deep depletion effect | Logic gates | FD-SOI | One transistor active pixel sensor | Substrates | Sensor arrays | ENGINEERING, ELECTRICAL & ELECTRONIC | Semiconductor devices | Pixels | MOSFETs | Depletion | Active pixel sensors | Random access | Silicon | Photoelectrons | Sensors | Charge transfer | Transistors
Journal Article
Solid State Electronics, ISSN 0038-1101, 09/2019, Volume 159, pp. 90 - 98
GDNMOS (Gated Diode merged NMOS) and GDBIMOS (Gated Diode merged BIMOS) were fabricated using the 28 nm node ultra-thin film UTBB FD-SOI high-k metal gate CMOS... 
MOSFET | Gated diode | GDBIMOS | ESD | Electrostatic discharges | FD-SOI | GDNMOS | BIMOS | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Thin films | Dielectric films | Transistors | Complementary metal oxide semiconductors
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 07/2016, Volume 51, Issue 7, pp. 1651 - 1662
Journal Article
Applied Surface Science, ISSN 0169-4332, 05/2016, Volume 371, pp. 436 - 446
Epitaxy of Si or SiGe on Si substrates needs perfectly cleaned substrates. When bulk substrates can be cleaned at high temperature, FD-SOI substrates must be... 
WET clean | FD-SOI | SiGe | SiCoNi™ preclean | SiGe:B | Epitaxy | Silicon compounds | Thin films | Silicon | Dielectric films | Drains | Surface preparation | Cleaning | Budgeting | Silicon films | Silicon germanides | Physics
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 08/2017, Volume 25, Issue 8, pp. 2296 - 2306
Journal Article
Cluster Computing, ISSN 1386-7857, 5/2019, Volume 22, Issue S3, pp. 6907 - 6912
An enhanced nonvolatile magnetic flip-flop is introduced in this paper. Spin torque transfer magnetic tunnel junction (MTJ) with the breakdown concept is used... 
Processor Architectures | Magnetic tunneling junction | 45 nm FD-SOI technology | Leakage power control | Computer Science | Computer Communication Networks | Non volatile flip-flop | Operating Systems | 45 nm FD-SOI technology
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 07/2016, Volume 51, Issue 7, pp. 1651 - 1662
A versatile three-lane transmitter/repeater array was designed and manufactured in a production 28nm ultra-thin body and BOX (UTBB) FD-SOI CMOS technology.... 
Voltage measurement | Inverters | series-stacked cascoded CMOS inverter | CMOS | transimpedance amplifier | large-swing driver | MOSFET circuits | Logic gates | FD-SOI | Threshold voltage | CMOS integrated circuits | Transistors | silicon photonics | transmitter | repeater | Transmitters | Polypropylenes | Swing | Repeaters | Lanes | Arrays
Journal Article
Solid State Electronics, ISSN 0038-1101, 03/2016, Volume 117, pp. 170 - 184
Ultra-low power operation and extreme energy efficiency are strong requirements for a number of high-growth application areas, such as E-health, Internet of... 
Multi-core architectures | FD-SOI | Body biasing | Ultra-low-power devices | Near-threshold computing | Temperature compensation | Medical informatics
Journal Article
IEEE JOURNAL OF SOLID-STATE CIRCUITS, ISSN 0018-9200, 07/2016, Volume 51, Issue 7, pp. 1651 - 1662
A versatile three-lane transmitter/repeater array was designed and manufactured in a production 28nm ultra-thin body and BOX (UTBB) FD-SOI CMOS technology.... 
CMOS | transimpedance amplifier | large-swing driver | FD-SOI | series-stacked cascoded CMOS inverter | silicon photonics | transmitter | repeater | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Solid State Electronics, ISSN 0038-1101, 02/2017, Volume 128, pp. 172 - 179
We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the... 
CMOS | MOSFET | Gated diode | LBJT | Thyristor | ESD | Electrostatic discharges | FD-SOI | SOI | Thin films | Dielectric films | Engineering Sciences | Micro and nanotechnologies | Microelectronics
Journal Article
Solid State Electronics, ISSN 0038-1101, 01/2016, Volume 115, pp. 192 - 200
We evaluate the Electro-Static Discharge (ESD) protection capability of BIpolar MOS (BIMOS) transistors integrated in ultrathin silicon film for 28 nm Fully... 
BIMOS transistor | ESD protection | CMOS | FD-SOI | SOI | TCAD | PHYSICS, CONDENSED MATTER | EXTRACTION | PHYSICS, APPLIED | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Circuit components | Transistors | Complementary metal oxide semiconductors | Engineering Sciences | Micro and nanotechnologies | Microelectronics
Journal Article
Solid State Electronics, ISSN 0038-1101, 04/2012, Volume 70, pp. 50 - 58
Journal Article
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