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1. Full Text ZnO flower: Self-assembly growth from nanosheets with exposed {1 1¯ 0 0} facet, white emission, and enhanced photocatalysis
by Shi, Ruixia and Yang, Ping and Song, Xueling and Wang, Junpeng and Che, Quande and Zhang, Aiyu
Applied Surface Science, ISSN 0169-4332, 03/2016, Volume 366, pp. 506 - 513
ZnO flowers consisting of single crystal nanosheets with exposed facets were fabricated from trisodium citrate via hydrothermal at 180 °C. The single crystal... 
Hierarchical ZnO | Nanosheets | Self-assembly | White emission | Photocatalysis | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SINGLE-CRYSTALLINE | PERFORMANCE | CHEMISTRY, PHYSICAL | NANORODS | ARRAYS | HYDROTHERMAL SYNTHESIS | FACILE SYNTHESIS | MATERIALS SCIENCE, COATINGS & FILMS | Zinc oxide | Catalysis | Flowers | Structure | Growth | Crystals | Self assembly | Single crystals | Emission | Exposure | Nanostructure
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2. Novel aspects of diamond
: from growth to applications
by Yang, Nianjun, editor
2015, 2015, Topics in applied physics, ISBN 9783319098333, Volume 121, xvi, 325
This book focuses on new research fields of diamond, from its growth to applications. It covers growth of atomically flat diamond films, properties and... 
Electronics | Diamonds, Industrial | Materials | Diamond thin films | Diamonds, Artificial | Nanodiamonds | Diamonds | Electric properties | Biomedical Engineering | Materials Science | Applied and Technical Physics | Semiconductors | Optical and Electronic Materials | Nanoscale Science and Technology | Nanotechnology
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3. Principles of solidification
: an introduction to modern casting and crystal growth concepts
by Glicksman, M. E
2011, 1, ISBN 9781441973436, xviii, 520
"Principles of Solidification" offers detailed descriptions of the liquid-to-solid transitions encountered in solidification and other non-biological freezing... 
Metals | Crystallization | Solidification | Crystal growth | Polymer Sciences | Materials Science | Surfaces and Interfaces, Thin Films | Engineering Thermodynamics, Heat and Mass Transfer
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4. Full Text Grain growth and complex stress evolution during Volmer–Weber growth of polycrystalline thin films
by Yu, Hang Z and Thompson, Carl V
Acta Materialia, ISSN 1359-6454, 04/2014, Volume 67, pp. 189 - 198
Volmer–Weber growth of polycrystalline thin films involves poorly understood kinetic processes that occur far from equilibrium and lead to complex co-evolution... 
Grain growth | Intrinsic stress | Modeling | In situ | Thin film | INTERNAL-STRESS | BOUNDARY MOTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | DEPENDENCE | INTRINSIC STRESSES | TEMPERATURE | TENSILE STRESSES | COALESCENCE | COATINGS | DIFFUSION | NUCLEATION | Thin films | Metallic films | Dielectric films | Analysis | Stresses | Atomic mobilities | Compressive properties | Evolution | Microstructure | Deposition
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5. Full Text The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 ^} ) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System
by Saito, Yuji and Sekine, Katsuyuki and Kaihara, Ryu and Hirayama, Masaki and Sugawa, Shigetoshi and Aharoni, Herzl and Ohmi, Tadahiro
IEEE Transactions on Semiconductor Manufacturing, ISSN 0894-6507, 05/2010, Volume 23, Issue 2, pp. 328 - 339
An advanced approach for the growth of thin and ultra-thin oxide and nitride films at low temperatures (400?C) for the fabrication of future scaled-down... 
Temperature distribution | Semiconductor films | oxidation | plasma processing | Plasma devices | Fabrication | Gases | Microwave devices | Nitridation | Silicon | Argon | Plasma temperature | Electron devices | Plasma processing | Oxidation | OXYGEN | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | LINE SLOT ANTENNA | RECEPTION | ENERGY ION-BOMBARDMENT | ENGINEERING, MANUFACTURING | EMPLOYING HIGH-DENSITY | ENGINEERING, ELECTRICAL & ELECTRONIC | Production management | Growth | Equipment and supplies | Forecasts and trends | Chemical properties | Research | Plasma spraying | Methods | Semiconductor industry | Studies | Plasma | Temperature | Research & development--R&D | Electron temperature | Electronic devices | Semiconductor devices | Semiconductors | Silicon oxides | Silicon nitride | Oxides | Devices | Silicon dioxide
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6. Pulsed laser deposition of thin films
: applications-led growth of functional materials
by Eason, Robert
2007, 1. Aufl., ISBN 9780471447092, xxiii, 682
Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of... 
Science | Molecular Physics | Thin films | Laser beams | Industrial applications
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7. Full Text The global growth of graphene
by Ren, Wencai and Cheng, Hui-Ming
Nature Nanotechnology, ISSN 1748-3387, 01/2014, Volume 9, Issue 10, pp. 726 - 730
LAYER GRAPHENE | FILMS | CHEMICAL-VAPOR-DEPOSITION | OPTOELECTRONICS | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSHEETS | NANOSCIENCE & NANOTECHNOLOGY | GRAPHITE OXIDE
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8. Full Text Growth, Quantitative Growth Analysis, and Applications of Graphene on gamma-Al2O3 catalysts
by Park, J and Lee, J and Choi, JH and Hwang, DK and Song, YW
SCIENTIFIC REPORTS, ISSN 2045-2322, 07/2015, Volume 5, Issue 1, p. 11839
The possibilities offered by catalytic gamma-Al2O3 substrates are explored, and the mechanism governing graphene formation thereon is elucidated using both... 
FILMS | MINIMUM ENERGY PATHS | MULTIDISCIPLINARY SCIENCES | SADDLE-POINTS | ELASTIC BAND METHOD | NUCLEATION | GAMMA-ALUMINA | TRANSPARENT | BILAYER GRAPHENE | SURFACES
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9. Full Text Direct correlations between XPS analyses and growth film by chronopotentiometry on InP in liquid ammonia (−55°C)
by Gonçalves, A.-M and Njel, C and Aureau, D and Etcheberry, A
Applied Surface Science, ISSN 0169-4332, 01/2017, Volume 391, pp. 44 - 48
This paper is based on the understanding of the formation of a reproducible polyphosphazene-like film ( [(H N) P N] ) obtained on InP by anodic treatment in... 
Galvanostatic methods | Liquid ammonia | InP | XPS | Semiconductor electrochemistry | Passivation | OXIDATION | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CHEMISTRY, PHYSICAL | N-INP | EVOLUTION | INTERFACE | MATERIALS SCIENCE, COATINGS & FILMS | Ammonia | Analysis | Electrochemistry | Electrochemical reactions | Phosphazo compounds | Anodic | Indium phosphides | Polyphosphazenes | Charge | Chemical evolution | Phosphazene | X-ray photoelectron spectroscopy
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10. In-situ characterization of thin film growth
by Koster, G and Rijnders, Guus
2011, ISBN 9781845699345, xi, 282
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11. Fundamentals of crystal growth I
: macroscopic equilibrium and transport concepts
by Rosenberger, Franz E
1979, Springer series in solid-states sciences, ISBN 3540090231, Volume 5., ix, 530
Growth | Crystals
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12. Full Text Epitaxial growth of two-dimensional stanene
by Zhu, Feng-Feng and Chen, Wei-Jiong and Xu, Yong and Gao, Chun-Lei and Guan, Dan-Dan and Liu, Can-Hua and Qian, Dong and Zhang, Shou-Cheng and Jia, Jin-Feng
Nature Materials, ISSN 1476-1122, 10/2015, Volume 14, Issue 10, pp. 1020 - 1025
Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | SURFACE | CHEMISTRY, PHYSICAL | BI2TE3 | TOPOLOGICAL INSULATOR | Thin films | Materials science | Microscopy | Superconductivity | Synthesis | Graphene | Tin | Electronics | Molecular beam epitaxy | Topology | Two dimensional | Thermoelectricity | Physics - Materials Science
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13. Full Text A Platform for Large‐Scale Graphene Electronics – CVD Growth of Single‐Layer Graphene on CVD‐Grown Hexagonal Boron Nitride
by Wang, Min and Jang, Sung Kyu and Jang, Won‐Jun and Kim, Minwoo and Park, Seong‐Yong and Kim, Sang‐Woo and Kahng, Se‐Jong and Choi, Jae‐Young and Ruoff, Rodney S and Song, Young Jae and Lee, Sungjoo
Advanced Materials, ISSN 0935-9648, 05/2013, Volume 25, Issue 19, pp. 2746 - 2752
Direct chemical vapor deposition (CVD) growth of single‐layer graphene on CVD‐grown hexagonal boron nitride (h‐BN) film can suggest a large‐scale and... 
large area | defect‐free interfaces | h‐BN | direct CVD growth | graphene | defect-free interfaces | h-BN | TRANSISTOR | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | LARGE-AREA GRAPHENE | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | TRANSPORT | FILMS | SPECTROSCOPY | SUBSTRATE | HYSTERESIS | DEVICES | SCANNING-TUNNELING-MICROSCOPY | Boron Compounds - chemistry | Gases - chemistry | Electronics - instrumentation | Macromolecular Substances - chemistry | Molecular Conformation | Surface Properties | Membranes, Artificial | Materials Testing | Graphite - chemistry | Crystallization - methods | Molecular Imprinting - methods | Boron nitride | Universities and colleges | Graphene | Chemical vapor deposition | Graphite | Platforms | Electronic properties | Electronics | Devices | Hybrid structures
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14. Full Text Growth of graphene from solid carbon sources
by Yan, Zheng and Beitler, Elvira and Zhu, Yu and Tour, James M and Sun, Zhengzong and Yao, Jun
Nature, ISSN 0028-0836, 11/2010, Volume 468, Issue 7323, pp. 549 - 552
Monolayer graphene was first obtained as a transferable material in 2004 and has stimulated i