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Nature nanotechnology, ISSN 1748-3395, 2010, Volume 5, Issue 7, pp. 487 - 496
.... In particular, graphene-based transistors have developed rapidly and are now considered an option for post-silicon electronics... 
LARGE-AREA | TRANSPORT | FILMS | INDUCED BANDGAP | OPERATION | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | GAP | NANOSCIENCE & NANOTECHNOLOGY | LEED | FIELD-EFFECT TRANSISTORS | LAYERS
Journal Article
2006, 1. Aufl., ISBN 9780470855416, xxiii, 303
...) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor... 
Metal oxide semiconductor field-effect transistors | Mathematical models | Metal oxide semiconductors
Book
2006, ISBN 0387280022, vi, 217
Silicon CMOS technology continues to drive progress in electronics, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit... 
Metal oxide semiconductor field-effect transistors | Mathematical models | Nanostructured materials | Nanotechnology | Optical materials | Electronics and Microelectronics, Instrumentation | Solid State Physics and Spectroscopy | Optical and Electronic Materials | Condensed Matter | Chemistry
Book
Nature nanotechnology, ISSN 1748-3395, 2010, Volume 5, Issue 3, pp. 225 - 229
All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material... 
NANOSCIENCE & NANOTECHNOLOGY | MATERIALS SCIENCE, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | SILICON
Journal Article
Nature nanotechnology, ISSN 1748-3395, 2014, Volume 9, Issue 5, pp. 372 - 377
Journal Article