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Solid State Electronics, ISSN 0038-1101, 07/2019, Volume 157, pp. 55 - 60
In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in... 
Low power | InAs | HEMT | Field plate
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 212 - 215
Depletion-mode field-plated Ga 2 O 3 metal-oxide-semiconductor field-effect transistors were demonstrated for the first time. Substantial enhancement in... 
Logic gates | MOSFET | Electric breakdown | Dielectrics | Object recognition | Electric fields | FILMS | field plate | current collapse | BETA-GA2O3 | breakdown | Ga2O3 | power device | dispersion | high temperature | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Results in Physics, 06/2019, Volume 13
Diamond vertical Schottky barrier diodes (SBDs) with SiN field-plate (FP) structure has been investigated. Ti/Au and Zr/Ni/Au metal stacks are used as ohmic... 
SBDs, SiN | Diamond | Field-plate
Journal Article
Solid State Electronics, ISSN 0038-1101, 10/2019, Volume 160, p. 107629
In this paper, an innovative air-bridge recessed source field plate is implemented into the fabrication of high voltage mm-wave GaN high-electron-mobility... 
Breakdown voltage | GaN HEMTs | Field plate | Parasitic capacitance
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 03/2004, Volume 25, Issue 3, pp. 117 - 119
GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance. Great enhancement in... 
POWER PERFORMANCE | field plate | high-electron-mobility-transistors (HEMT) | GaN | microwave power | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
by Hu, ZZ and Zhou, H and Feng, Q and Zhang, JC and Zhang, CF and Dang, K and Cai, YC and Feng, ZQ and Gao, YY and Kang, XW and Hao, Y
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 10/2018, Volume 39, Issue 10, pp. 1564 - 1567
In this letter, we report on demonstrating high-performance field-plated lateral beta-Ga2O3 Schottky barrier diode (SBD) on a sapphire substrate with a reverse... 
power figure of merit | SINGLE-CRYSTALS | sapphire substrate | lateral Schottky barrier diode | Field-plate | beta-Ga2O3 | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
International Journal of Power Electronics and Drive Systems, ISSN 2088-8694, 03/2019, Volume 10, Issue 1, pp. 398 - 405
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2019, Volume 40, Issue 1, pp. 83 - 86
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2017, Volume 38, Issue 4, pp. 509 - 512
This letter reports a GaN vertical fin power field-effect-transistor structure with submicron fin-shaped channels on bulk GaN substrates. In this vertical... 
Field effect transistors | wet etch | Gallium nitride | e-mode | Substrates | vertical GaN FET | Electrodes | bulk GaN substrate | field plate | Logic gates | Power transistors | Silicon | top-down | OXIDE | OMEGA | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 01/2017, Volume 38, Issue 1, pp. 95 - 98
In this letter, we discuss a novel asymmetric field plate structure utilizing a slanted field plate ( FP) engineered to appropriately distribute the electric... 
power switch | field plate | Dynamic ON-resistance | RESISTANCE | GaN HEMT | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 09/2019, Volume 40, Issue 9, pp. 1399 - 1402
This letter demonstrates vertical Ga2O3 Schottky barrier diodes (SBDs) with a novel edge termination, the small-angle beveled field plate (SABFP), fabricated... 
Schottky diodes | non-punch-through | field plate | SCHOTTKY | Gallium oxide | DEVICES | bevel edge termination | substrate thinning | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
by Seok, O and Kim, HW and Moon, JH and Bahng, W
PHYSICA SCRIPTA, ISSN 0031-8949, 10/2019, Volume 94, Issue 10
High-voltage lateral double-implanted metal-oxide-semiconductor field-effect transistor on high-purity semi-insulating 4H-SiC substrate with dual field-plates... 
MESFET | field plate | PHYSICS, MULTIDISCIPLINARY | breakdown voltage | HIGH-TEMPERATURE | LDIMOSFET | SiC | HPSI
Journal Article
Results in Physics, ISSN 2211-3797, 12/2019, Volume 15, p. 102547
In this work, an L-shaped vertical field plate (LVFP) is introduced in high-voltage lateral double-diffused MOSFET (LDMOS). The LVFP is embedded in an oxide... 
Breakdown voltage | On-resistance | Vertical field plate | LDMOS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2018, Volume 39, Issue 10, pp. 1564 - 1567
Journal Article
by Lv, YJ and Zhou, XY and Long, SB and Song, XB and Wang, YG and Liang, SX and He, ZZ and Han, TT and Tan, X and Feng, ZH and Dong, H and Zhou, XZ and Yu, YT and Cai, SJ and Liu, M
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 01/2019, Volume 40, Issue 1, pp. 83 - 86
In this letter, source-field-plated beta-Ga2O3 MOSFETs are fabricated on Si-doped homoepitaxial film on (010) Fe-doped semi-insulating beta-Ga2O3 substrate.... 
source field plate | breakdown voltage | power figure of merit (PFOM) | Ga-2 O-3 MOSFET | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2011, Volume 32, Issue 5, pp. 632 - 634
This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off... 
Dynamic on-resistance | power switch | Switches | gate insulator | Gallium nitride | Degradation | field plate | GaN | Logic gates | Silicon | field-effect transistor | FETs | Aluminum gallium nitride | Dynamic ON-resistance | GANHEMTS | HEMTS | POWER | PLATE | ENGINEERING, ELECTRICAL & ELECTRONIC | Electrodes | Semiconductor devices | Dynamics | Voltage | Leakage current | Transistors | Plates | Gates
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2017, Volume 38, Issue 1, pp. 95 - 98
In this letter, we discuss a novel asymmetric field plate structure utilizing a slanted field plate (FP) engineered to appropriately distribute the electric... 
power switch | field plate | Switches | Dynamic ON-resistance | Logic gates | HEMTs | Epitaxial growth | MODFETs | Gallium nitride | Electric fields | GaN HEMT
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2017, Volume 64, Issue 1, pp. 8 - 14
Journal Article
Advanced Materials Research, ISSN 1022-6680, 2012, Volume 529, pp. 33 - 36
Conference Proceeding
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