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Journal of Crystal Growth, ISSN 0022-0248, 04/2019, Volume 512, pp. 74 - 77
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 12/2017, Volume 25, Issue 26, p. 33514
Recent breakthroughs in solid-state photonic quantum technologies enable the generation and detection of single photons with near-unity efficiency as required... 
GAAS | OPTICS
Journal Article
Optics Express, ISSN 1094-4087, 08/2018, Volume 26, Issue 17, pp. 22389 - 22393
Lasing is reported for ridge-waveguide devices processed from a 40-stage InPbased quantum cascade laser structure grown on a 6-inch silicon substrate with a... 
GAAS | OPTICS
Journal Article
OPTICS LETTERS, ISSN 0146-9592, 11/2017, Volume 42, Issue 22, pp. 4756 - 4759
We report an octave-wide mid-IR spectrum (2.3-4.8 mu m) obtained from a subharmonic optical parametric oscillator (OPO) based on a newly developed nonlinear... 
OPTICS | GAAS
Journal Article
Optics Express, ISSN 1094-4087, 04/2018, Volume 26, Issue 9, pp. 11568 - 11576
Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source.... 
INJECTION | GAAS | OPTICS
Journal Article
Optics Letters, ISSN 0146-9592, 06/2007, Volume 32, Issue 12, pp. 1620 - 1622
We demonstrate optical switching of electrically resonant terahertz planar metamaterials fabricated on ErAs/GaAs nanoisland superlattice substrates.... 
GAAS | CARRIER DYNAMICS | OPTICS
Journal Article
by Wang, L and Cai, W and Niu, LY and Luo, WW and Ma, ZH and Du, CL and Xue, SQ and Zhang, XZ and Xu, JJ
OPTICS EXPRESS, ISSN 1094-4087, 11/2015, Volume 23, Issue 23, pp. 29533 - 29542
The coupled modes between graphene plasmons and surface phonons of a semiconductor substrate are investigated, which can be efficiently controlled by carrier... 
GAAS | OPTICS
Journal Article
2005, EMIS processing series, ISBN 9780863413537, Volume no. 6, xvii, 350
Book
Applied Physics Letters, ISSN 0003-6951, 05/2012, Volume 100, Issue 19, pp. 193905 - 193905-3
We fabricate a high-efficiency InAs/GaAs quantum dot (QD) solar cell. It contains five layers of high-density self-assembled InAs QDs grown by metalorganic... 
GAAS | PHYSICS, APPLIED | CHARGE
Journal Article
PLoS ONE, ISSN 1932-6203, 12/2017, Volume 12, Issue 12, p. e0189990
Friedreich’s ataxia (FRDA) is a genetic neurodegenerative disorder caused by transcriptional silencing of the frataxin gene (FXN) due to expansions of GAA... 
Heart | Cerebellum | Spinal cord | Cerebral cortex | Disease | Cardiomyopathy | Gallium arsenide | Biochemistry | Tissues | Proteins | Consortia | Frataxin | Lymphocytes | Fibroblasts | Ataxia | Genetics | Pancreas | Stability | Neurodegenerative diseases | Diabetes mellitus | Cortex | Mammals | Gene expression | Patients | Data interpretation | Gene silencing | Life span | Stem cells | Diabetes
Journal Article
Optics Letters, ISSN 0146-9592, 10/2004, Volume 29, Issue 19, pp. 2291 - 2293
We demonstrate slow light via population oscillation in semiconductor quantum-well structures for the first time. A group velocity as low as 9600 m/s is... 
GAAS | PROPAGATION | OPTICS
Journal Article
Optics Express, ISSN 1094-4087, 05/2017, Volume 25, Issue 9, pp. 10070 - 10077
In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. To achieve the splitting, we combine the... 
INGAASP | INDEX | OPTICS | GAAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2006, Volume 89, Issue 22, pp. 223125 - 223125-3
The authors report on the growth of InAs nanowires using nanometer-sized Si clusters in a closed system without any metal catalyst. The growth was performed at... 
MECHANISM | GAAS | PHYSICS, APPLIED
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 06/2016, Volume 295, pp. 107 - 111
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2019, Volume 125, Issue 20, p. 205110
A conductive AlN epitaxial layer is successfully realized by spontaneously forming via-holes filled with n-AlGaN inside an AlN buffer layer on a Si substrate.... 
GAAS | ENERGY | PHYSICS, APPLIED
Journal Article
by Hong, M and Wan, HW and Lin, KY and Chang, YC and Chen, MH and Lin, YH and Lin, TD and Pi, TW and Kwo, J
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 09/2017, Volume 111, Issue 12
We performed interfacial electric and electronic studies of both in-situ and ex-situ atomic-layer deposited (ALD) Al2O3 films on InGaAs. Self-aligned... 
PHYSICS, APPLIED | AL2O3 | GAAS
Journal Article
by Zhu, S and Shi, B and Li, Q and Wan, YT and Lau, KM
OPTICS EXPRESS, ISSN 1094-4087, 12/2017, Volume 25, Issue 25, pp. 31281 - 31293
In this paper, we present a parametric study of high performance microdisk lasers at 1.55 mu m telecom wavelength, monolithically grown on on-axis (001) Si... 
TEMPERATURE | OPTICS | LAYER | GAAS
Journal Article
Physical Review Letters, ISSN 0031-9007, 08/2009, Volume 103, Issue 2, p. 026801
The large electronic polarization in III-V nitrides allows for novel physics not possible in other semiconductor families. In this work, interband Zener... 
PHYSICS, MULTIDISCIPLINARY | GAAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2011, Volume 98, Issue 8, pp. 082903 - 082903-3
Models of insulating interfaces between (100)GaAs and HfO 2 , Gd 2 O 3 , and Al 2 O 3 are constructed and used to host various interfacial defects to see which... 
PHYSICS, APPLIED | DIELECTRICS | GAAS | DEPOSITION
Journal Article
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