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2005, EMIS processing series, ISBN 9780863413537, Volume no. 6, xvii, 350
Book
Journal of crystal growth, ISSN 0022-0248, 04/2019, Volume 512, pp. 74 - 77
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2009, Volume 7193
The PCI technique, a modification of photothermal spectroscopy, has become a powerful tool for testing various low absorptive optical materials and components.... 
GaAs | Photothermal technique | Absorption
Conference Proceeding
Surface & coatings technology, ISSN 0257-8972, 06/2016, Volume 295, pp. 107 - 111
GaAs/InxGa1−xAs/GaAs strained and partially relaxed structures were grown by metalorganic vapor phase epitaxy and in situ monitored by laser reflectometry... 
GaAs/InxGa1 − xAs/GaAs structures | Photoreflectance | Valence-band splitting | Strain effect | MOVPE | GaAs/In | As/GaAs structures
Journal Article
Solar energy materials and solar cells, ISSN 0927-0248, 10/2015, Volume 141, pp. 372 - 376
In this work, we developed wafer bonding techniques to bond GaAs and Si wafers. Wafer bonding was carried out at room temperature without high temperature... 
Wafer bonding | GaAs/Si | GaAs on Si | GaAs solar cell | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Energy & Fuels | Physics | Science & Technology | Physics, Applied | Annealing | Zoos | Solar cells | Gallium arsenides | Photovoltaic cells | Gallium arsenide | Wafers | Silicon substrates | Bonding | Energy conversion efficiency
Journal Article
Applied surface science, ISSN 0169-4332, 11/2016, Volume 387, pp. 228 - 236
Journal Article
Applied surface science, ISSN 0169-4332, 05/2019, Volume 476, pp. 615 - 622
The surface and interface properties of III-V semiconductor heterostructures are of extreme importance for increasing the efficiency of multijunction solar... 
Surface and interface states | ZrO2/GaAs | Surface photovoltage | GaP/GaAs | Physical Sciences | Chemistry | Materials Science | Technology | Materials Science, Coatings & Films | Physics, Condensed Matter | Chemistry, Physical | Physics | Science & Technology | Physics, Applied
Journal Article
Nano letters, ISSN 1530-6984, 04/2017, Volume 17, Issue 4, pp. 2420 - 2425
We present the electrical properties of p–n junction photodetectors comprised of vertically oriented p-GaAs nanowire arrays on the n-GaAs substrate. We measure... 
photodetectors | surface passivation | Nanowires | GaAs | Materials Science | Materials Science, Multidisciplinary | Physics, Condensed Matter | Science & Technology - Other Topics | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Physical Sciences | Chemistry | Nanoscience & Nanotechnology | Technology | Chemistry, Multidisciplinary
Journal Article
Advanced materials (Weinheim), ISSN 0935-9648, 07/2010, Volume 22, Issue 28, pp. 3062 - 3066
Journal Article
Nature (London), ISSN 1476-4687, 04/2009, Volume 458, Issue 7238, pp. 610 - 613
Journal Article
Solar energy, ISSN 0038-092X, 12/2015, Volume 122, pp. 76 - 86
•Double- and triple-layer antireflection coatings for multi-junction solar cells.•Analysis based on transfer matrix method.•Reflectance suppressed below 5%... 
Transfer matrix method | Antireflection coating | Multi-junction solar cell | GaAs(1−x)Px/silicon tandem cell | silicon tandem cell | GaAs
Journal Article
Journal Article
Journal of luminescence, ISSN 0022-2313, 08/2016, Volume 176, pp. 118 - 123
This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO3 as acidic solution in vapor... 
X-Ray diffraction (XRD) | Vapor etching (VE) | Nano-crystals | Porous gaAs layer (por-GaAs-L) | PL spectroscopy | Optics | Physical Sciences | Science & Technology | Atomic force microscopy | Gallium arsenide | Optical properties | Nanocrystals | Diffraction | Imaging | X-ray diffraction | Mathematical models | Etching
Journal Article
Journal of physics. D, Applied physics, ISSN 0022-3727, 03/2015, Volume 48, Issue 10
ZrO2 based antireflection coatings are expected to show a high laser induced damage threshold in the facet coating applications of laser diodes. A single layer... 
quantum well | InGaAs/GaAs | ZrO | 980 nm laser diode | XRR | SiO2/GaAs multilayers | facet coating | Physical Sciences | Physics | Science & Technology | Physics, Applied
Journal Article