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IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2008, Volume 55, Issue 11, pp. 3042 - 3047
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 2007, Volume 84, Issue 9, pp. 2071 - 2076
This paper describes the evolution of the SOI MOSFET from single-gate structures to multigate (double-gate, trigate, Π-gate, Ω-gate and gate-all-around)... 
MuGFET | Trigate FET | SOI | Double-gate FET | GAA | FinFET | TRANSISTOR | DEVICE DESIGN GUIDELINES | PHYSICS, APPLIED | trigate FET | PERFORMANCE | NANOSCIENCE & NANOTECHNOLOGY | BULK | ENGINEERING, ELECTRICAL & ELECTRONIC | CMOS | THRESHOLD-VOLTAGE | double-gate FET | OPTICS | Circuit components | Metal oxide semiconductor field effect transistors
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2013, Volume 34, Issue 9, pp. 1196 - 1198
Transistor designs based on using mixed Γ-L valleys for electron transport are proposed to overcome the density of states bottleneck while maintaining high... 
MOSFET | tight-binding (TB) | Gallium arsenide | InAs | L-valley | Logic gates | GaSb | ultrathin body (UTB) | Capacitance | Silicon | GaAs | Indium phosphide | III-V | PERFORMANCE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2016, Volume 63, Issue 8, pp. 3338 - 3341
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2011, Volume 32, Issue 11, pp. 1495 - 1497
A vertical Si nanowire (SiNW) gate-all-around n-type MOSFET integrated with Ni fully silicided gate is presented. Devices are fabricated with 100 nm gate... 
top down | Ni fully silicided (FUSI) gate | Implants | Gate-all-around (GAA) | Logic gates | Nickel | Silicon | Nanoscale devices | Silicidation | vertical silicon nanowire (SiNW) | MOSFETs | TRANSISTORS | FUSI GATES | ENGINEERING, ELECTRICAL & ELECTRONIC | Silicides | Nanocomposites | Nanomaterials | Nanowires | Devices | Gates (circuits) | Nanostructure
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2015, Volume 62, Issue 11, pp. 3516 - 3523
Journal Article
Current Opinion in Solid State and Materials Science, ISSN 1359-0286, 2011, Volume 15, Issue 5, pp. 188 - 207
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2019, Volume 40, Issue 12, pp. 1 - 1
The natural asymmetry of the vertically stacked channels results in the junction temperature difference in nanosheet channels which is dependent on pitch,... 
Resistance | gate-all-around (GAA) MOSFETs | Temperature dependence | threshold voltage (Vt | Vertically stacked nanosheets | Metals | Logic gates | Conductivity | Ions | Silicon | self-heating
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2014, Volume 35, Issue 3, pp. 324 - 326
III-V junctionless gate-all-around (GAA) nanowire MOSFETs (NWFETs) are experimentally demonstrated for the first time. Source/drain resistance and thermal... 
Degradation | Radio frequency | MOSFET | implantation-free junctionless transistor | gate-all-around (GAA) | Gallium arsenide | Linearity | regrowth source/drain | Logic gates | GaAs MOSFET | nanowire | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2010, Volume 31, Issue 9, pp. 903 - 905
Journal Article
by Gu, JJJ and Wu, H and Liu, YQ and Neal, AT and Gordon, RG and Ye, PD
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 967 - 969
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down approach. The nanowire... 
InGaAs | Gate-all-around (GAA) | nanowire | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2015, Volume 62, Issue 11, pp. 3508 - 3515
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2018, Volume 39, Issue 4, pp. 464 - 467
In this letter, Gate-All-Around (GAA) nanowire (NW) p-MOSFETs with new approaches to fabricate totally isolated channels in replacement metal gate (RMG) are... 
SS | silicon NW | H₂ baking | Gallium arsenide | GAA | Microelectronics | DIBL | Logic gates | MOSFET circuits | SCEs | FinFETs | Oxidation | Silicon | oxidation | H baking | H-2 baking | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2017, Volume 64, Issue 11, pp. 4393 - 4399
The self-heating effects (SHEs) in gate-all-around (GAA) MOSFETs with vertically stacked silicon nanowire (SiNW) channels are investigated. Direct observations... 
Heating systems | MOSFET | Gallium arsenide | reliability | self-heating effects (SHEs) | silicon nanowire (SiNW) | electrothermal effects | Temperature measurement | Degradation | gate-all-around (GAA) | Logic gates | vertically stacked silicon channels | Thermal conductivity | Silicon | PHYSICS, APPLIED | PERFORMANCE | ENGINEERING, ELECTRICAL & ELECTRONIC | TRANSPORT | TEMPERATURE
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 11/2015, Volume 147, pp. 330 - 334
Y O , as a common high κ gate dielectric, has been directly deposited on (In)GaAs, GaSb, and Ge using electron beam evaporation in ultra-high vacuum. These... 
Rare earth oxide | GaSb | CMOS | Common gate stacks | III–V | III-V | PMOSFETS | HFO2 | PHYSICS, APPLIED | PASSIVATION | PERFORMANCE | NANOSCIENCE & NANOTECHNOLOGY | GAAS | ENGINEERING, ELECTRICAL & ELECTRONIC | IMPACT | ALD AL2O3 | OPTICS | GA2O3(GD2O3) | TECHNOLOGY | Semiconductors | Self alignment | Yttrium oxide | Dielectrics | Compatibility | MOSFETs | Gates
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2016, Volume 63, Issue 3, pp. 910 - 915
Journal Article
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