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Applied Physics Letters, ISSN 0003-6951, 02/2012, Volume 100, Issue 7, pp. 073508 - 073508-4
A theoretical study of GaAs/GaInNAs solar cells based on multiple-quantum well solar cells (MQWSCs) and superlattice solar cell (SLSC) configuration is... 
PHYSICS, APPLIED | DIODES | GAINNAS
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 10/2015, Volume 86, pp. 467 - 471
We report on a novel dilute nitride-based resonant cavity enhanced photodetector (RCEPD) operating at 1.286 μm. The RCEPD was fabricated using 21 pairs top and... 
Resonance cavity | GaInNAs | RCEPD | Photodetector
Journal Article
Jpn J Appl Phys, ISSN 0021-4922, 8/2011, Volume 50, Issue 8, pp. 08KD06 - 08KD06-4
Decreasing the growth rate in chemical beam epitaxy (CBE) is effective to improve the hole mobility and minority-carrier lifetime in p-GaAsN films. The hole... 
LAYER | PHYSICS, APPLIED | GAINNAS
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2011, Volume 7987
It has been observed experimentally that the band edge photoluminescence of GaInNAs Quantum well (QW) materials is broadened resulting from band-tailing,... 
GaInNAs QWs | GaInNAs | QW gain modelling
Conference Proceeding
Applied Physics Letters, ISSN 0003-6951, 10/2000, Volume 77, Issue 16, pp. 2482 - 2484
The incorporation of nitrogen in the low percentage range is investigated in a different III-V compound matrix. The materials are grown by molecular-beam... 
PHYSICS, APPLIED | GROWTH | GAINNAS
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 10/2015, Volume 86, pp. 467 - 471
•Novel GaInNAs RCEPD for the 1.3μm optical communications window.•Without internal gain we obtain a 43% quantum efficiency.•With internal gain we obtain 67%... 
Resonance cavity | GaInNAs | RCEPD | Photodetector
Journal Article
Optics and Laser Technology, ISSN 0030-3992, 02/2020, Volume 122, p. 105888
•GaInNAs-based Resonant-Cavity Light Emitting Diode is proposed and developed for to use in Optical Communication.•The highest emission power obtained on... 
Resonant Cavity | GaInNAs | Light emitting diodes | RCLED | Dilute Nitride
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2000, Volume 76, Issue 10, pp. 1285 - 1287
The temperature dependence of band gap energies of GaAsN alloys was studied with absorption measurements. As the N concentration in GaAsN increased, the... 
PHYSICS, APPLIED | GAINNAS
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 06/2015, Volume 82, pp. 623 - 629
•This work reports on theoretical studies on the GaInNAs material properties.•Effect of the In and N concentrations on the position of conduction and valence... 
GaInNAs | Semiconductor | Optoelectronics | Superlattice | Bandgap | LIGHT-EMITTING-DIODES | PHYSICS, CONDENSED MATTER | GAINNAS ALLOYS | PHOTOLUMINESCENCE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2011, Volume 99, Issue 1, pp. 011904 - 011904-3
Photoreflectance spectroscopy has been used to study the energy gap and spin-orbit splitting in InNAsSb alloys containing different amounts of nitrogen and... 
BAND PARAMETERS | PHYSICS, APPLIED | SEMICONDUCTORS | GAINNAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2014, Volume 105, Issue 1, p. 12107
In this paper, we present the fabrication of dilute nitride semiconductor GaAs1-xNx by nitrogen-ion-implantation and flash lamp annealing (FLA). N was... 
PHYSICS, APPLIED | BAND | ALLOYS | ELECTRONIC STATES | RESONANT RAMAN | GAINNAS
Journal Article
Nanoscale Research Letters, ISSN 1931-7573, 2014, Volume 9, Issue 1
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2012, Volume 100, Issue 17, pp. 171906 - 171906-4
The local element distribution across tensile-strained N δ-doped (In,Ga)As/GaAs quantum wells (QWs) is investigated by transmission electron microscopy. The... 
DECOMPOSITION | 100 INP | PHYSICS, APPLIED | GAINNAS | RANGE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2002, Volume 81, Issue 14, pp. 2523 - 2525
Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 mum, with... 
PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | 1.3 MU-M | GAINNAS
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 09/2014, Volume 90, Issue 11
Supercells are often used in ab initio calculations to model compound alloys, surfaces, and defects. One of the main challenges of supercell electronic... 
PHYSICS, CONDENSED MATTER | ELECTRON-MOBILITY | APPROXIMATION | ALLOYS | HGCDTE | SEMICONDUCTORS | GAP | REPRESENTATION | GAINNAS
Journal Article
SCIENTIFIC REPORTS, ISSN 2045-2322, 05/2019, Volume 9, Issue 1
Using spectroscopic ellipsometry measurements on GaP1-xBix/GaP epitaxial layers up to x=3.7% we observe a giant bowing of the direct band gap (E-g(Gamma)) and... 
OFFSETS | GAAS1-XBIX | TEMPERATURE-DEPENDENCE | SEMICONDUCTORS | MULTIDISCIPLINARY SCIENCES | MOVPE GROWTH | DIODES | MODEL | GAINNAS
Journal Article
Nanoscale Research Letters, ISSN 1931-7573, 2012, Volume 7
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 05/2018, Volume 33, Issue 6, p. 64003
We present the results of longitudinal carrier transport under a high electrical field in n- and p-type modulation-doped Ga0.68In0.32NyAs1-y/GaAs (y = 0.009,... 
hot phonons | GaInNAs | modulation-doped GaInNAs/GaAs quantum well | dilute nitride | hot-electron and hole temperature | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, MULTIDISCIPLINARY | PHOTODETECTOR | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2013, Volume 113, Issue 4, p. 43110
Journal Article
Philosophical Magazine, ISSN 1478-6435, 02/2011, Volume 91, Issue 4, pp. 628 - 639
Journal Article
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