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physica status solidi (b), ISSN 0370-1972, 2018, Volume 255, Issue 8, pp. 1800133 - n/a
We have modulated the photocatalytic properties of GaN‐based two‐dimensional (2D) heterostructures including GaN/MoSe2 and GaN/WS2 (WSe2) by adjusting biaxial... 
photocatalytic properties | GaN/WS2 | GaN/MoSe2 | hybrid density functional | GaN/WSe2 | GaN/MoSe | GaN/WS | GaN/WSe | WSe2 | PHYSICS, CONDENSED MATTER | GaN | WS2 | MoSe2
Journal Article
Reports on progress in physics, ISSN 1361-6633, 2016, Volume 79, Issue 5, pp. 056501 - 56545
Journal Article
Applied physics letters, ISSN 1077-3118, 2008, Volume 93, Issue 5, pp. 051102 - 051102-3
The authors report room temperature polariton lasing at λ ∼ 345 nm in a hybrid Al In N ∕ Al Ga N multiple quantum well microcavity (MQW-MC) containing a Ga N ∕... 
GAN | PHYSICS, APPLIED | LASERS
Journal Article
Journal of physics. D, Applied physics, ISSN 1361-6463, 2018, Volume 51, Issue 16, p. 163001
Gallium nitride 9GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based... 
GaN-on-Si | power circuits | GaN | PHYSICS, APPLIED | FIELD | MODE | GATE | BREAKDOWN VOLTAGE | TRANSISTORS | ALGAN/GAN HEMTS | SUBSTRATE | MIS | THRESHOLD VOLTAGE
Journal Article
Materials, ISSN 1996-1944, 2012, Volume 5, Issue 7, pp. 1297 - 1335
The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The... 
surfaces | ALD | Oxides | High-κ | Treatments | GaN growth | Interface | oxides | GAN-SIO2 INTERFACES | MATERIALS SCIENCE, MULTIDISCIPLINARY | interface | treatments | COPPER METAL | FIELD-EFFECT-TRANSISTOR | LOW DEFECT DENSITY | BAND-OFFSET MEASUREMENTS | high-kappa, surfaces | GROWN GAN | N-TYPE GAN | SCANNING-TUNNELING-MICROSCOPY | AL2O3 | ATOMIC LAYER DEPOSITION | GaN, growth | high-κ, surfaces
Journal Article
Applied physics letters, ISSN 1077-3118, 2017, Volume 110, Issue 1, p. 012103
We study the electronic properties of two-dimensional (2D) group-III nitrides BN, AlN, GaN, InN, and TlN by first-principles approaches. With increasing... 
GAN | PHYSICS, APPLIED
Journal Article
Medžiagotyra, ISSN 1392-1320, 2016, Volume 22, Issue 2, pp. 223 - 227
This study made an attempt to understand and control the heteroepitaxial growth of GaN from the view of the essential behaviors of crystal growth. Through a... 
(11-22) semipolar GaN | Surface pit | a-plane GaN | Lateral growth | c-plane GaN | SAPPHIRE | surface pit | lateral growth | MATERIALS SCIENCE, MULTIDISCIPLINARY | PLANE GAN | a-plane GaN, c-plane GaN, (11-22) semipolar GaN, surface pit, lateral growth
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 01/2012, Volume 100, Issue 1, p. 13504
We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a... 
GAN | PHYSICS, APPLIED | GROWTH
Journal Article
Crystal research and technology (1979), ISSN 0232-1300, 08/2018, Volume 53, Issue 8, pp. 1800042 - n/a
The study of GaN morphology and structure modification due to the variation of the nitridation temperature are reported. GaN is obtained by nitridation of GaAs... 
CVD | GaN wurtzite structure | GaN zinc‐blende structure | nitridation | GaN(1−x)Asx | GaN | GaN zinc-blende structure | GaN(1-x)Asx | SAPPHIRE | PHOTOLUMINESCENCE | FILMS | AIN | CRYSTALLOGRAPHY | GAAS
Journal Article
Applied physics letters, ISSN 0003-6951, 12/2014, Volume 105, Issue 22, p. 222101
A Fermi-level control scheme for point defect management using above-bandgap UV illumination during growth is presented. We propose an extension to the analogy... 
GAN | PHYSICS, APPLIED | SEMICONDUCTORS
Journal Article
2013, Di 1 ban., ISBN 9787210046110, 6, 5, 2, 208
Book
Thin solid films, ISSN 0040-6090, 11/2017, Volume 642, Issue C, pp. 25 - 30
Journal Article