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Angewandte Chemie International Edition, ISSN 1433-7851, 06/2015, Volume 54, Issue 27, pp. 7764 - 7769
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2015, Volume 419, pp. 88 - 93
...) GaN layers on patterned silicon (114) 1° off substrates. The patterning and subsequent anisotropic etching of the Si substrates allows exposing Si {111... 
A1. Selective area growth | Semipolar | B1. Silicon | GaN | B1. Silicon GaN Semipolar | Thermodynamics | Anisotropy | Growth | Optical properties | Epitaxy | Silicon | Liquors | Electron microscopy | Immunoglobulin A | Stacking faults | Gallium nitrides | Silicon substrates | Optoelectronic devices | Etching | Dislocations
Journal Article
physica status solidi (b), ISSN 0370-1972, 2018, Volume 255, Issue 5, pp. 1700406 - n/a
We have studied capping layers for AlGaN‐based high electron mobility transistor (HEMT... 
SiN | high electron mobility transistors | GaN | capping layers | AlGaN
Journal Article
Applied Surface Science, ISSN 0169-4332, 01/2019, Volume 465, pp. 1055 - 1060
[Display omitted] •High quality STO thin films were epitaxially grown on GaN with TiN buffer layers... 
SrTiO3 | Pulsed laser deposition | Epitaxial growth | GaN | TiN buffer layer | THIN-FILMS | PHYSICS, CONDENSED MATTER | CRYSTALLINE OXIDES | PHYSICS, APPLIED | INTEGRATION | CHEMISTRY, PHYSICAL | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
APPLIED PHYSICS EXPRESS, ISSN 1882-0778, 01/2015, Volume 8, Issue 1
Thick high-purity beta-Ga2O3 layers of high crystalline quality were grown homoepitaxially by halide vapor phase epitaxy (HVPE... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | FILMS | GAN | DEPOSITION
Journal Article
Journal of applied physics, ISSN 1089-7550, 2006, Volume 100, Issue 2, p. 023522
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2014, Volume 116, Issue 15, p. 153505
Journal Article
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, ISSN 0168-583X, 2015, Volume 365, pp. 168 - 170
P-type conversion of n−-GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates... 
P-type GaN | Free-standing GaN substrate | GaN | Mg-ion implantation | VAPOR-PHASE EPITAXY | ACTIVATION | INSTRUMENTS & INSTRUMENTATION | NUCLEAR SCIENCE & TECHNOLOGY | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | PHYSICS, NUCLEAR | Spectral emissivity | Epitaxial layers | Gallium nitrides | Implantation | Excitation spectra | Magnesium | Diodes | Conversion
Journal Article
physica status solidi (b), ISSN 0370-1972, 01/2016, Volume 253, Issue 1, pp. 46 - 53
In this article, the growth and coalescence of semi‐polar (112‾2) oriented GaN layers, deposited on pre‐structured r... 
MOVPE | 112‾2 | GaN | Marker layer | pre‐structured sapphire substrate | semi‐polar | Semi-polar | 1122 | Pre-structured sapphire substrate | Coalescing | Artifacts | Transmission electron microscopy | Sapphire | Gallium nitrides | Markers | Coalescence | Density
Journal Article
Physical review. B, Condensed matter and materials physics, ISSN 1550-235X, 2014, Volume 89, Issue 11
Strained transition layers, which are common for heteroepitaxial growth of functional semiconductors on foreign substrates, include high defect densities that impair heat conduction... 
THIN-FILMS | PHYSICS, CONDENSED MATTER | ALN | THERMAL-BOUNDARY RESISTANCE | ALGAN/GAN HEMTS | CONDUCTIVITY | TEMPERATURES | SILICON | NUCLEATION LAYER | IMPURITIES | HEAT-CAPACITY
Journal Article
physica status solidi (b), ISSN 1521-3951, 2018, Volume 256, Issue 2, pp. 1800268 - n/a
... V‐shaped nanostructures with the characteristic size of elements as low as 100 nm are formed. It has been demonstrated that application of buffer layers of 3C... 
semipolar orientation | SiC | GaN | nano‐patterned substrates | nano-patterned substrates | GAN LAYERS | SUBSTITUTION | PHYSICS, CONDENSED MATTER | ALN | MODEL | SILICON-CARBIDE | Si | SUBSTRATE | GROWTH | PHASE EPITAXY | ATOMS
Journal Article
ECS Journal of Solid State Science and Technology, ISSN 2162-8769, 2017, Volume 6, Issue 2, pp. Q3040 - Q3044
We studied the growth of Si-and Sn-doped homoepitaxial beta-Ga2O3 layers on (010)-oriented substrates by metal organic vapor phase epitaxy... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | OXIDE | CHEMICAL-VAPOR-DEPOSITION | GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2010, Volume 31, Issue 3, pp. 189 - 191
Journal Article
Applied physics express, ISSN 1882-0786, 2016, Volume 9, Issue 6, p. 061004
.... Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure... 
LIGHT-EMITTING-DIODES | DOPED GAN FILMS | PHYSICS, APPLIED | TUNNEL-JUNCTION
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 06/2017, Volume 707, pp. 341 - 346
In conjunction with lift-off patterning and thermal annealing, we have fabricated hexagonal arrays of epitaxial ZnAl2O4 buffer layers on sapphire substrates... 
Hydrothermal growth | ZnO | XRD | Lateral epitaxial overgrowth | TEM | Dislocations | SAPPHIRE | OXIDE | 90 DEGREES-C | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | CHEMISTRY, PHYSICAL | FILMS | GAN | GROWTH | WATER | Zinc oxide | Epitaxy | Legislators | Annealing | Photoluminescence
Journal Article
Applied surface science, ISSN 0169-4332, 2019, Volume 471, pp. 231 - 238
Journal Article