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Journal of Applied Physics, ISSN 0021-8979, 06/2006, Volume 99, Issue 11, pp. 114308 - 114308-7
We present a methodology to determine critical dimensions for coherently strained coaxial nanowire heterostructures based on a well-known formalism used to... 
CORE-SHELL | RELAXATION | PHYSICS, APPLIED | MISFIT | GAN-ALN
Journal Article
Applied Surface Science, ISSN 0169-4332, 07/2019, Volume 481, pp. 319 - 326
The Ga Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown... 
(Al)GaN/AlN | MBE | Si substrate | III-nitrides growth | Interdiffusion | SiN
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 08/2011, Volume 84, Issue 8
First- and second-order piezoelectric coefficients for all binary group-III nitride (III-N) wurtzite semiconductors are calculated using ab initio density... 
TRANSITION | PSEUDOPOTENTIALS | FIELDS | PHYSICS, CONDENSED MATTER | SPONTANEOUS POLARIZATION | GAN/ALN QUANTUM-WELLS | CONSTANTS | ALN | V-NITRIDES | DEPENDENCE
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 10/2011, Volume 84, Issue 16
One dimensional quantum-dot superlattices (1D-QDSLs) consisting of acoustically mismatched materials are demonstrated theoretically to possess sub-1 W m(-1)... 
PHYSICS, CONDENSED MATTER | HETEROSTRUCTURES | SILICON NANOWIRES | CONFINEMENT | CRYSTALS | NANOSCALE | ALN/GAN/ALN
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2019, Volume 114, Issue 25, p. 253501
To make complementary GaN electronics a desirable technology, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures.... 
EQUATIONS | GROUP VELOCITIES | POLAR OPTICAL PHONONS | PHYSICS, APPLIED | ALN/GAN/ALN | SPECTRUM
Journal Article
Materials & Design, ISSN 0264-1275, 11/2018, Volume 157, pp. 141 - 150
The relaxation of built-up strain in the heteroepitaxial GaN/AlN superlattices (SLs) leads to defect-related undesirable changes of the optical and electrical... 
Cracks | XRD | Microstructure | Strain relaxation | GaN/AlN superlattice | Dislocations
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2008, Volume 104, Issue 9, pp. 093501 - 093501-16
We have studied the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well (MQW) structures for intersubband... 
MULTIPLE-QUANTUM WELLS | PHYSICS, APPLIED | INFRARED PHOTODETECTOR | CASCADE LASER | TELECOMMUNICATION WAVELENGTHS | WAVE-GUIDES | MOLECULAR-BEAM EPITAXY | 1.55 MU-M | ABSORPTION | GAN SURFACES | GAN-ALN | Gallium | Optoelectronics | Optical properties | Analysis | Silicon | Semiconductor doping | Aluminum nitride | Electric properties
Journal Article
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 09/2005, Volume 72, Issue 11
We have theoretically studied acoustic phonon spectra and phonon propagation in rectangular nanowires embedded within elastically dissimilar materials. As... 
PHYSICS, CONDENSED MATTER | ALN/GAN/ALN | QUANTUM WIRES | ELECTRONS | HETEROSTRUCTURES | SCATTERING
Journal Article
Applied Surface Science, ISSN 0169-4332, 07/2019, Volume 481, pp. 319 - 326
The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown... 
(Al)GaN/AlN | MBE | Interdiffusion | SiN | Si substrate | III-nitrides growth | NITRIDATION | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ALN | CHEMISTRY, PHYSICAL | LAYERS | III-NITRIDES | MORPHOLOGY | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Journal of Luminescence, ISSN 0022-2313, 06/2018, Volume 198, pp. 309 - 313
Cubic (Al)GaN/AlN multiple quantum wells were grown by plasma assisted molecular beam epitaxy with three different configurations at interfaces. We employ... 
(Al)GaN/AlN | Localization states | C-GaN | Interface defects | TRANSITION | LOCALIZATION | GAN | GROWTH | OPTICS | GAAS | BUFFER
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2017, Volume 122, Issue 15, p. 155302
We report on the effect of strain on the optical and structural properties of 5-, 10-, and 20-period GaN/AlN superlattices (SLs) deposited by plasma-assisted... 
PHONON-DISPERSION | RAMAN-SCATTERING | LATTICE-DYNAMICS | DOPED GAN | INFRARED REFLECTANCE ANALYSIS | BIAXIAL STRAIN | PHYSICS, APPLIED | MOLECULAR-BEAM EPITAXY | WURTZITE GAN | GAN-ALN | DEPENDENCE | Deformation potential | Usage | Quantum wells | Optical properties | Molecular beam epitaxy | Research | Superlattices as materials | Structure
Journal Article
ACS Applied Materials and Interfaces, ISSN 1944-8244, 11/2017, Volume 9, Issue 47, pp. 41435 - 41442
Micro/nanowire-based devices have been envisioned as a promising new route toward improved electronic and optoelectronic applications, which attracts... 
electron gas | GaN microwire | HEMT | GaN/AlN/AlGaN | heterojunction | normally off | HETEROSTRUCTURES | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | NANOWIRE ARRAYS | MODE ALGAN/GAN HEMTS | MULTIPLE-QUANTUM-WELLS | GROWTH | ENHANCEMENT | GAN NANOWIRES | POLARIZATION | LIGHT-EMITTING DIODE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2003, Volume 82, Issue 8, pp. 1299 - 1301
We report on the performance of AlGaN/GaN/AlN heterostructure field-effect transistors (HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN... 
PHYSICS, APPLIED | ALUMINUM NITRIDE | GAN-ALN | ELASTIC STRAIN RELAXATION
Journal Article
MATERIALS & DESIGN, ISSN 0264-1275, 11/2018, Volume 157, pp. 141 - 150
The relaxation of built-up strain in the heteroepitaxial GaN/AlN superlattices (SLs) leads to defect-related undesirable changes of the optical and electrical... 
VAPOR-PHASE EPITAXY | ALN | PHOTOLUMINESCENCE | Strain relaxation | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | X-RAY-DIFFRACTION | INTERSUBBAND ABSORPTION | XRD | GaN/AlN superlattice | Dislocations | Cracks | QUANTUM-WELL STRUCTURES | GROWTH | WURTZITE GAN | ALN/GAN SUPERLATTICES | Microstructure
Journal Article
QUANTUM ELECTRONICS, ISSN 1063-7818, 2019, Volume 49, Issue 6, pp. 535 - 539
The stimulated emission and photoluminescence of ultrathin GaN quantum wells with a nominal thickness of 1.5-2 monolayers (MLs) and AlN barrier layers 4-6.66... 
molecular beam epitaxy | QUANTUM SCIENCE & TECHNOLOGY | PHYSICS, APPLIED | HETEROSTRUCTURES | LASER | optical pumping | MOLECULAR-BEAM EPITAXY | ultraviolet stimulated radiation | ultrathin GaN/AlN quantum wells | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2008, Volume 93, Issue 17, pp. 173111 - 173111-3
The authors have shown that the low-field electron drift mobility in the ultrathin silicon films can be enhanced if they are embedded within acoustically hard... 
PHYSICS, APPLIED | TECHNOLOGIES | ELECTRONS | HETEROSTRUCTURES | ALN/GAN/ALN | THERMAL-CONDUCTIVITY | SCATTERING
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 03/2018, Volume 115, Issue C, pp. 116 - 122
AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable... 
Raman spectroscopy | Gallium nitride | Interface phonons | Superlattice | Dielectric continuum model | Aluminum nitride | PHYSICS, CONDENSED MATTER | NITRIDE | SCATTERING | GAN-ALN SUPERLATTICE | ENGINEERING
Journal Article
Wuli Xuebao/Acta Physica Sinica, ISSN 1000-3290, 05/2015, Volume 64, Issue 10
Journal Article
Physica Status Solidi (A) Applications and Materials Science, ISSN 1862-6300, 05/2010, Volume 207, Issue 5, pp. 1074 - 1078
Journal Article
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