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Journal of the American Chemical Society, ISSN 0002-7863, 05/2016, Volume 138, Issue 18, pp. 6020 - 6027
A self-healing dielectric elastomer is achieved by the incorporation of metal–ligand coordination as cross-linking sites in nonpolar polydimethylsiloxane (PDMS) polymers. The ligand is 2,2′-bipyridine-5,5... 
DESIGN | SKIN | CHEMISTRY, MULTIDISCIPLINARY | HYSTERESIS | FIELD-EFFECT TRANSISTORS | ELECTRONICS
Journal Article
Advanced materials (Weinheim), ISSN 0935-9648, 2010, Volume 22, Issue 30, pp. 3282 - 3287
Journal Article
Microelectronic engineering, ISSN 0167-9317, 2009, Volume 86, Issue 7-9, pp. 1789 - 1795
The requirements and development of high- k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM... 
SrTiO3 | DRAM | Flash | High- k | High-k | PHYSICS, APPLIED | KAPPA GATE DIELECTRICS | ELECTRICAL-PROPERTIES | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ATOMIC LAYER DEPOSITION | SRTIO3 THIN-FILMS | ENGINEERING, ELECTRICAL & ELECTRONIC | Thin films | Circuit components | Memory (Computers) | Capacitors | Titanates | Dielectric films | Dielectrics | Air-to-surface missiles
Journal Article
Journal of the Electrochemical Society, ISSN 0013-4651, 1995, Volume 142, Issue 1, pp. 186 - 190
Plasma-enhanced chemical vapor deposited (PECVD) silicon nitride is a popular gate dielectric for the inverted, staggered thin film transistors (TFTs... 
ELECTROCHEMISTRY | PLASMA | CHEMICAL-VAPOR-DEPOSITION | TEMPERATURE | MECHANISM | FREQUENCY | STRESS
Journal Article
Nature materials, ISSN 1476-4660, 2008, Volume 7, Issue 11, pp. 900 - 906
Journal Article