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Nanotechnology, ISSN 0957-4484, 02/2015, Volume 26, Issue 8, pp. 084004 - 10
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2017, Volume 121, Issue 4, p. 45301
Recently, dielectric breakdown of solid-state membranes in solution has come to be known as a powerful method for fabricating nanopore sensors. This method has... 
SOLID-STATE NANOPORES | PHYSICS, APPLIED | MOS2 NANOPORES | MECHANISM | SILICON | GRAPHENE | RELIABILITY | FABRICATION | THIN GATE OXIDE | CURRENT RECTIFICATION | RESISTANCE STATISTICS | Silicon compounds | Breakdown (Electricity) | Research | DNA | Optical properties | Electric properties
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 12/2007, Volume 91, Issue 24, p. 242905
The statistics of electrical breakdown field (E-bd) of HfO2 and SiO2 thin films has been evaluated over multiple length scales using macroscopic testing of... 
PHYSICS, APPLIED | ATOMIC-FORCE MICROSCOPY | GATE OXIDE BREAKDOWN | DIELECTRICS | RELIABILITY | CHARGE | SIO2
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2006, Volume 88, Issue 12, p. 122907
Ultrafast progressive breakdown has been observed in a TaN/TiN metal gate metal-oxide-semiconductor field effect transistor (MOSFET) compared to a... 
GATE-OXIDE BREAKDOWN | IMPACT | PHYSICS, APPLIED | STACKS
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2017, Volume 76-77, pp. 87 - 91
Time dependent dielectric breakdown degrades the reliability of SRAM cache. A novel methodology to estimate SRAM cache reliability and performance is... 
Configuration | Time dependent dielectric breakdown (TDDB) | Reliability | Performance | SRAM | Monte Carlo simulation | GATE-OXIDE BREAKDOWN | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | MECHANISMS | ENGINEERING, ELECTRICAL & ELECTRONIC | IMPACT | BIAS TEMPERATURE INSTABILITY | Memory (Computers) | Monte Carlo method | Analysis
Journal Article
IEEE International Reliability Physics Symposium Proceedings, ISSN 1541-7026, 05/2018, Volume 2018-, pp. 2B.31 - 2B.35
Conference Proceeding
센서학회지, ISSN 1225-5475, 2019, Volume 28, Issue 1, p. 17
As CMOS technology scales down, reliability is becoming an important concern for VLSI designers. This paper analyzes gate-oxide breakdowns (i.e., the... 
aging effect | TDDB | gate-oxide breakdown
Journal Article
Microprocessors and Microsystems, ISSN 0141-9331, 11/2015, Volume 39, Issue 8, pp. 950 - 960
Time-dependent gate dielectric breakdown (TDDB) is a leading reliability concern for modern microprocessors. In this paper, a framework is proposed to analyze... 
Time-dependent dielectric breakdown | Gate oxide breakdown | Microprocessor | Modeling | Timing analysis | Cache | SYSTEM | COMPUTER SCIENCE, HARDWARE & ARCHITECTURE | MODE | ENGINEERING, ELECTRICAL & ELECTRONIC | IMPACT | OXIDE BREAKDOWN | CHIP | COMPUTER SCIENCE, THEORY & METHODS | INDUCED LEAKAGE CURRENT | Stresses | Microprocessors | Methodology | Dielectric breakdown | Logic | Devices | Estimates | Gates
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 04/2011, Volume 44, Issue 13, p. 135403
We studied the dielectric breakdown in tunnelling barriers produced by plasma-assisted oxidation of an aluminium surface. The barrier mean height, thickness... 
MAGNETORESISTANCE | ROOM-TEMPERATURE | PHYSICS, APPLIED | ATOMIC-FORCE MICROSCOPY | FILMS | MODELS | STATISTICS | GATE OXIDE RELIABILITY | JUNCTIONS | THICKNESS | ULTRATHIN AL2O3
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 02/2015, Volume 55, Issue 2, pp. 308 - 317
Journal Article
by Sune, J
IEEE Electron Device Letters, ISSN 0741-3106, 06/2001, Volume 22, Issue 6, pp. 296 - 298
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2017, Volume 121, Issue 3
The conduction mechanism(s) of gate leakage current J G through thermally grown silicon dioxide (SiO2) films on the silicon (Si) face of n-type 4H-silicon... 
N-TYPE | RADIATION DETECTORS | PHYSICS, APPLIED | DEEP LEVELS | 4H-SIC EPITAXIAL LAYERS | BARRIER | RELIABILITY | SILICON DIOXIDE | GATE OXIDES | LIFETIME | THERMALLY GROWN SIO2 | Silicon compounds | Thermal properties | Thin films | Dielectric films | Research | Electric properties
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 05/2015, Volume 55, Issue 6, pp. 894 - 902
The time-dependent dielectric breakdown has been investigated in a series of nominally identical Co–Fe–B/MgO/Co–Fe–B junctions by voltage ramp experiments. The... 
MTJs | Dielectric reliability | MTJ breakdown | GATE OXIDE | PHYSICS, APPLIED | SILICON DIOXIDE FILMS | FIELD | NANOSCIENCE & NANOTECHNOLOGY | RELIABILITY | MODEL | DEPENDENCE | ENGINEERING, ELECTRICAL & ELECTRONIC | THIN SIO2 | INJECTION | Annealing | Analysis
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 08/2014, Volume 54, Issue 8, pp. 1477 - 1488
Journal Article
Solid State Electronics, ISSN 0038-1101, 03/2013, Volume 81, pp. 27 - 31
► Degradation induced by off-state avalanche breakdown in SGO–LDMOS is investigated. ► The anomalous phenomenon of on-resistance Ron degradation is disclosed.... 
Avalanche breakdown | On-resistance degradation | Step-shaped gate oxide LDMOS | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | LATERAL DMOS TRANSISTORS | LDMOS TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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