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Applied Physics Letters, ISSN 0003-6951, 09/2019, Volume 115, Issue 10, p. 103105
Ge ion implantation is adopted for doping of Sb2Te3 thin films and modifying the amorphous to crystal transition kinetics. The crystallization temperatures,... 
PHYSICS, APPLIED | GE2SB2TE5
Journal Article
Applied Optics, ISSN 1559-128X, 05/2018, Volume 57, Issue 13, pp. 3385 - 3389
A color-modulating optical coating display based on phase change materials (PCM) and indium tin oxide (ITO) is fabricated and analyzed. We demonstrate that... 
THIN-FILMS | GE2SB2TE5 | OPTICS
Journal Article
by Shen, X and Wang, GX and Wang, RP and Dai, SX and Wu, LC and Chen, YM and Xu, TF and Nie, QH
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 04/2013, Volume 102, Issue 13, p. 131902
Zn-doped Sb2Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization... 
PHYSICS, APPLIED | GE2SB2TE5
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2016, Volume 108, Issue 22, p. 223103
Compared with pure Sb, N-doped Sb material was proved to be a promising candidate for the phase change memory (PCM) use because of its higher crystallization... 
PHYSICS, APPLIED | GE2SB2TE5 | FILMS | TEMPERATURE
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2016, Volume 120, Issue 24, p. 245303
In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one... 
CHANGE MEMORY | PHYSICS, APPLIED | GE2SB2TE5
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2012, Volume 100, Issue 25, p. 253105
Phase-change devices exhibit characteristic threshold switching from the reset (off) to the set (on) state. Mainstream understanding of this electrical... 
PHYSICS, APPLIED | GE2SB2TE5
Journal Article
Optics Express, ISSN 1094-4087, 11/2013, Volume 21, Issue 23, pp. 27841 - 27851
A metal/phase-change material/metal tri-layer planar chiral metamaterial in the shape of a gammadion is numerically modelled. The chiral metamaterial is... 
MEMORY TECHNOLOGY | OPTICAL-ACTIVITY | GE2SB2TE5 | FILMS | OPTICS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2018, Volume 112, Issue 18, p. 183504
Phase-change random access memory (PCRAM) is enabled by a large resistance contrast between amorphous and crystalline phases upon reversible switching between... 
PHYSICS, APPLIED | GE2SB2TE5 FILMS | DATA-STORAGE
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 06/2011, Volume 109, Issue 11, p. 113506
We report the use of chalcogenidometallate clusters as a solution-processable precursor to SnSe2 for phase change memory applications. This precursor is... 
PHYSICS, APPLIED | PERFORMANCE | GE2SB2TE5 FILMS
Journal Article
Applied Optics, ISSN 1559-128X, 06/2010, Volume 49, Issue 18, pp. 3470 - 3473
We demonstrate amorphization in a Ge10Sb2Te13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were... 
GE2SB2TE5 | OPTICS | MEMORY | PHASE-TRANSITIONS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2018, Volume 124, Issue 19, p. 195103
Plan view scanning transmission electron microscopy was used to investigate the microstructural connections to device resistance in inline phase change switch... 
PHYSICS, APPLIED | GE2SB2TE5 | SEGREGATION | CHANGE MEMORY
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2018, Volume 124, Issue 16, p. 165304
The interplay between impurities (i.e., C and N) and the twin boundary (TB) in GeTe was systematically investigated by first principles calculations. The... 
THIN-FILMS | PHYSICS, APPLIED | GE2SB2TE5 | TWINS | BEHAVIOR
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2018, Volume 112, Issue 7, p. 71902
Phase change memory (PCM) is an important candidate for future memory devices. The crystalline phase of PCM materials contains abundant intrinsic vacancies,... 
DISTORTION | PHYSICS, APPLIED | GE2SB2TE5 | METAL | DRIVEN | AMORPHIZATION
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2018, Volume 113, Issue 17, p. 171903
High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state... 
PHYSICS, APPLIED | DOPED GE2SB2TE5 | FILMS | CHANGE MEMORY | CRYSTALLIZATION BEHAVIOR
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2013, Volume 103, Issue 14, p. 142112
Ge44Sn14Te42 phase change material exhibits a higher crystallization temperature (similar to 221 degrees C), a larger crystallization activation energy... 
TRANSITION | PHYSICS, APPLIED | GE2SB2TE5 | FILMS
Journal Article
by Wang, GX and Shen, X and Nie, QH and Wang, RP and Wu, LC and Lu, YG and Dai, SX and Xu, TF and Chen, YM
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 07/2013, Volume 103, Issue 3, p. 31914
The superior performance of Zn-doped Sb7Te3 films might be favorable for the application in phase change memory. It was found that Zn dopants were able to... 
THIN-FILMS | PHYSICS, APPLIED | GE2SB2TE5 | NUCLEATION
Journal Article
by Wang, JB and Li, Q and Tao, SP and Xia, ZB and Li, YK and Liu, Y and Gu, ZQ and Hu, CQ
OPTICS LETTERS, ISSN 0146-9592, 01/2020, Volume 45, Issue 1, pp. 244 - 247
High-reflectivity/color contrast is crucial for phase-change materials (PCMs) in optical-storage and display applications. However, the relationship between... 
CRYSTALLIZATION | GE2SB2TE5 | OPTICS | MODULATION | Phase change materials | Vacancies | Color | Reflectance
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 09/2013, Volume 103, Issue 13, p. 133507
A compositionally matched superlattice-like (SLL) structure comprised of Ge2Sb2Te5 (GST) and nitrogen-doped GST (N-GST) was developed to achieve both low... 
THIN-FILMS | PHYSICS, APPLIED | GE2SB2TE5
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2017, Volume 122, Issue 19, p. 195107
Thermal conductivity (kappa) is one of the fundamental properties of materials for phase change memory (PCM) application, as the set/reset processes strongly... 
TRANSITION | IMPACT | PHYSICS, APPLIED | GE2SB2TE5 | SB2TE3 | MECHANICAL-PROPERTIES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2019, Volume 115, Issue 2, p. 21903
The crystallization properties of tellurium-free Ti30Sb70 thin films were examined by in situ electrical resistance measurements. The... 
PHYSICS, APPLIED | MEMORY | PHASE-CHANGE CHARACTERISTICS | GE2SB2TE5 | NUCLEATION | MICROSCOPY | BEHAVIORS
Journal Article
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