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Nanoscale, ISSN 2040-3372, 2018, Volume 10, Issue 48, pp. 22946 - 22953
.... However, detailed experimental studies on the underlying mechanism are still lacking. In this work, epitaxially grown thin films consisting of van-der-Waals-bonded Ge–Sb... 
CRYSTALLIZATION | PHYSICS, APPLIED | DYNAMIC RECONFIGURATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | DISORDER | DIFFRACTION | NANOSCIENCE & NANOTECHNOLOGY | GE2SB2TE5 | METAL | TRANSITIONS | DER-WAALS GAPS | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
Journal of alloys and compounds, ISSN 0925-8388, 2014, Volume 617, pp. 306 - 309
....•The activation energy of crystallization Ea increased with increasing content of indium.•The prepared thin films could be applied for electrical non-volatile phase change memories... 
Thin films | Phase change materials | Sb–Te system | Crystallization | Thermal flash evaporation | Sb-Te system | CRYSTALLIZATION MECHANISM | SERIES | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | CHEMISTRY, PHYSICAL | GE2SB2TE5 | Dielectric films | Chemical properties | Indium | Analysis | Activation energy
Journal Article
Materials letters, ISSN 0167-577X, 2019, Volume 234, pp. 229 - 232
[Display omitted] •Ag added Ge2Sb2Te5 (GST) thin films were successfully Ag8GeTe6 phase formation mixed GST... 
Ag8GeTe6 | Ag-added Ge2Sb2Te5 | Thermoelectric thin film | Co-magnetron sputtering | Ag-added Ge | GeTe | PHYSICS, APPLIED | CRYSTAL-STRUCTURE | MATERIALS SCIENCE, MULTIDISCIPLINARY | ALLOY
Journal Article
Journal of alloys and compounds, ISSN 0925-8388, 08/2016, Volume 676, pp. 582 - 590
Journal Article
Nanotechnology, ISSN 1361-6528, 2017, Volume 28, Issue 6, p. 065706
The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the... 
MBE | GST | sputtering | epitaxy | STEM | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRON-DIFFRACTION | NANOSCIENCE & NANOTECHNOLOGY | GE2SB2TE5 | MICROSCOPY | SUPERLATTICES | METAL | TRANSITIONS
Journal Article
Journal of applied physics, ISSN 1089-7550, 2009, Volume 106, Issue 10, pp. 103509 - 103509-7
Pulsed laser (532 nm) deposited Ge 2 Sb 2 Te 5 thin films were investigated by means of spectroscopic ellipsometry and Raman scattering spectroscopy... 
STORAGE | PHYSICS, APPLIED | GE2SB2TE5 FILMS | PHASE-CHANGE MATERIALS | MEMORY | MECHANISM | ALLOYS | SEMICONDUCTORS | OPTICAL-PROPERTIES | DEVICES | GLASSES | Usage | Optical properties | Ablation (Vaporization technology) | Antimony | Germanium | Raman spectroscopy | Tellurium | Electric properties | Chemical Sciences
Journal Article
Nanoscale, ISSN 2040-3372, 2018, Volume 10, Issue 15, pp. 7228 - 7237
The scaling effects of the Ge 8 Sb 92 thin films on the phase change behavior, thermal properties, phase structure, crystallization mechanism and electrical switching characteristics of phase change... 
TRANSITION | NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | GE2SB2TE5 | CHEMISTRY, MULTIDISCIPLINARY | MATERIALS SCIENCE, MULTIDISCIPLINARY | Grain size | Phase change | Crystallization | X-ray diffraction | Antimony | Film thickness | Phase transitions | Thermal stability | Switching | Thin films | Diffraction patterns | Computer memory | Pulse duration | Magnetron sputtering | Power consumption | Optical properties | Scaling | Threshold voltage | Magnetic properties
Journal Article
Journal of non-crystalline solids, ISSN 0022-3093, 01/2018, Volume 480, pp. 51 - 56
Transmission electron microscopy results are presented for as-deposited amorphous Ge2Sb2Te5 thin films after theirs isothermal annealing and CW laser illumination... 
Heterogeneous nucleation | Amorphous thin film | Ge2Sb2Te5 phase change material | Finite system crystallization | phase change material | CRYSTAL NUCLEATION | TRANSFORMATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | MODEL | PARAMETERS | MATERIALS SCIENCE, CERAMICS | GLASS | NONISOTHERMAL CRYSTALLIZATION | KINETICS | GROWTH | PHASE-CHANGE | LIQUIDS
Journal Article
Journal of non-crystalline solids, ISSN 0022-3093, 01/2016, Volume 432, pp. 505 - 509
Journal Article
Scientific reports, ISSN 2045-2322, 2016, Volume 6, Issue 1, p. 32895
...1Scientific RepoRts | 6:32895 | DOI: 10.1038/srep32895 www.nature.com/scientificreports Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin... 
TRANSITION | PHASE-CHANGE MATERIALS | SPECTROSCOPY | SEMICONDUCTORS | SILICON | SURFACE | DIFFRACTION | GE2SB2TE5 | LOCAL-STRUCTURE | CRYSTALLINE | To be checked by Faculty | MULTIDISCIPLINARY SCIENCES | Lattice theory | Transmission electron microscopy | Diffraction | Films | Electron diffraction | Electron microscopy | Raman spectroscopy | Dimerization | Electrons
Journal Article
Advanced Optical Materials, ISSN 2195-1071, 06/2017, Volume 5, Issue 12, pp. 1700169 - n/a
Journal Article
Journal of alloys and compounds, ISSN 0925-8388, 2018, Volume 763, pp. 430 - 435
Optimization of substrate heating during sputtering processes is essential to obtain desired microstructures of deposited thin films, as it provides the required energy flux during the nucleation and growth... 
Microstructural control | High resolution transmission electron microscopy | Ge2Sb2Te5 thin film | Thermoelectric properties | thin film | CRYSTAL-STRUCTURE | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | CHEMISTRY, PHYSICAL
Journal Article