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AIP ADVANCES, ISSN 2158-3226, 08/2015, Volume 5, Issue 8, pp. 87164 - 087164-7
Journal Article
Journal of applied physics, ISSN 1089-7550, 2008, Volume 103, Issue 11, pp. 111101 - 111101-18
... Devices, Inc., focused the research on an amorphous semiconductor alloy made by germanium, antimony, and tellurium, or Ge-Sb-Te (GST), developing the phase change... 
LASER-INDUCED CRYSTALLIZATION | THIN-FILMS | VALENCE-ALTERNATION MODEL | PHYSICS, APPLIED | GETE-BASED ALLOYS | READ PERFORMANCE | INTRINSIC DATA RETENTION | KINETICS | PART II | GE2SB2TE5 | LOCAL-STRUCTURE | Analysis | Germanium | Antimony | Spectra | Phase transformations (Statistical physics) | Properties | Tellurium
Journal Article
Solid-state electronics, ISSN 0038-1101, 11/2013, Volume 89, pp. 93 - 100
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 2004, Volume 51, Issue 3, pp. 452 - 459
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 05/2009, Volume 105, Issue 10, p. 104902
Journal Article
Nanotechnology, ISSN 0957-4484, 06/2011, Volume 22, Issue 25, p. 254021
Today phase change memory (PCM) technology has reached product maturity at 90 and 65 nm nodes, while the 45 nm node is under development and is expected to... 
LASER-INDUCED CRYSTALLIZATION | THIN-FILMS | PHYSICS, APPLIED | GETE-BASED ALLOYS | INTRINSIC DATA RETENTION | KINETICS | MATERIALS SCIENCE, MULTIDISCIPLINARY | PERCOLATION | NANOSCIENCE & NANOTECHNOLOGY | NUCLEATION | MODEL | PHASE-CHANGE MEMORIES
Journal Article
by Li, J.Q and Lu, Z.W and Wu, H.J and Li, H.T and Liu, F.S and Ao, W.Q and Luo, J and He, J.Q
Acta materialia, ISSN 1359-6454, 2014, Volume 74, pp. 215 - 223
Ge-rich Ge1−xPbxTe0.5Se0.5 (x=0, 0.1, 0.2, 0.25, 0.3, 0.4 and 0.5) alloys with high thermoelectric performance were prepared through a conventional melting, solutioning and quenching route, followed by a spark plasma sintering technique... 
Se co-doping | GeTe-based alloy | Thermoelectric properties | THERMAL TRANSPORT | ALLOYS | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | MERIT | DEVICES | FIGURE
Journal Article
by Li, J.Q and Lu, Z.W and Wu, H.J and Li, H.T and Liu, F.S and Ao, W.Q and Luo, J and He, J.Q
Acta materialia, ISSN 1359-6454, 08/2014, Volume 74, pp. 215 - 223
Ge-rich Ge Pb Te Se (x = 0, 0.1, 0.2, 0.25, 0.3, 0.4 and 0.5) alloys with high thermoelectric performance were prepared through a conventional melting, solutioning and quenching route, followed by a spark plasma sintering technique... 
Se co-doping | GeTe-based alloy | Thermoelectric properties
Journal Article
Journal Article
Journal of applied physics, ISSN 1089-7550, 2004, Volume 95, Issue 8, pp. 3977 - 3983
The erasure rate of recorded amorphous marks in nanometers thick SbTe-alloy layers is studied as a function of layer thickness... 
LASER-INDUCED CRYSTALLIZATION | PHYSICS, APPLIED | GETE-BASED ALLOYS | GE2SB2TE5 FILMS | DISC | GROWTH | MEDIA | NUCLEATION | SIMULATION | Research | Phase change drives | Analysis | Dielectric devices
Journal Article
Materials science & engineering. A, Structural materials : properties, microstructure and processing, ISSN 0921-5093, 2001, Volume 304, Issue 1-2, pp. 73 - 80
Journal Article
Journal of magnetism and magnetic materials, ISSN 0304-8853, 2002, Volume 249, Issue 3, pp. 492 - 498
.... A microscopic investigation of crystallization kinetics with a static tester and an atomic force microscope demonstrates that for different alloy compositions recrystallization proceeds either via... 
Atomic force microscopy | Transformation | X-ray reflection | Kinetics | Phase change recording | Crystallization | PHYSICS, CONDENSED MATTER | GETE-BASED ALLOYS | MATERIALS SCIENCE, MULTIDISCIPLINARY | INDUCED CRYSTALLIZATION PHENOMENA | GE2SB2TE5 | transformation | atomic force microscopy | phase change recording | FILMS | GROWTH | crystallization | NUCLEATION | kinetics
Journal Article
Japanese journal of applied physics. Pt. 1, Regular papers & short notes, ISSN 0021-4922, 03/1999, Volume 38, Issue 3 B, pp. 1625 - 1628
We discuss various mechanisms that lead to a high crystallization rate of the recording layer in a phase change disk. The role of interface layers, recording... 
Ge-Sb-Te layer thickness | Crystallization time | Data bit rate | Oxygen doping into Ge-Sb-Te | Phase change optical disk | Rewritable | SiC cap layer | LASER-INDUCED CRYSTALLIZATION | PHYSICS, APPLIED | GETE-BASED ALLOYS | data bit rate | crystallization time | oxygen doping into Ge-Sb-Te | rewritable | GROWTH | NUCLEATION | phase change optical disk | DISK
Journal Article