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2005, EMIS processing series, ISBN 9780863413537, Volume no. 6, xvii, 350
Book
Applied Physics Letters, ISSN 0003-6951, 05/2008, Volume 92, Issue 20, pp. 203502 - 203502-3
We describe the fabrication of III-V metal-oxide-semiconductor (MOS) devices on Ge ∕ Si virtual substrates using molecular-beam epitaxy. Migration-enhanced... 
PHYSICS, APPLIED | EPILAYERS | THREADING-DISLOCATION DENSITIES | GAAS | LAYERS | MOSFET | CRYSTAL GROWTH | DEPOSITION | SUBSTRATES | INDIUM ARSENIDES | MATERIALS SCIENCE | CAPACITANCE | ELECTRIC POTENTIAL | MOLECULAR BEAM EPITAXY | GALLIUM ARSENIDES | FABRICATION | ALUMINIUM OXIDES | CAPACITORS | SEMICONDUCTOR MATERIALS | FERMI LEVEL | SILICON OXIDES
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 6/2016, Volume 45, Issue 6, pp. 2750 - 2756
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 04/2017, Volume 163, pp. 263 - 269
Zn diffusion processes in n-Ga In As Sb epitaxial films are studied using different diffusion sources, a series of the Zn profiles with single and double humps... 
Thermophotovoltaic cells | Zn diffusion | GaInAsSb | PHYSICS, APPLIED | PHOTOLUMINESCENCE | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | GASB | MODEL | GAAS | INGAASSB | ZINC DIFFUSION | DEVICES | TPV CELLS | EFFICIENCY | Electrical engineering | Ceramics | Ceramic materials | Epitaxy
Journal Article
Solid State Electronics, ISSN 0038-1101, 01/2015, Volume 103, pp. 147 - 153
[Display omitted] •High-performance and compact size Wilkinson power divider was presented.•An optimized fabrication process was implemented on GaAs... 
Lumped elements | GaAs substrate | Wilkinson power divider | Reliability | Integrated passive device | PHYSICS, CONDENSED MATTER | DESIGN | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Gallium arsenide | Power dividers | Noise levels | Capacitors | Insertion loss | Accelerated tests | Devices | Frequency ranges
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 11/2005, Volume 11, Issue 6, pp. 1266 - 1277
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2005, Volume 87, Issue 15, pp. 153504 - 153504-3
The potential use of ZnO-based photonic and electronic devices has been demonstrated by the fabrication of prototype ultraviolet (UV) photodetector and... 
PHYSICS, APPLIED | FABRICATION | TRANSPORT-PROPERTIES | FILMS | GAAS | HOMOSTRUCTURAL ZNO
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 04/2016, Volume 55, Issue 4, p. 4
We fabricated a two-color surface emitting device of a coupled cavity structure, which is applicable to terahertz light source. GaAs/AlGaAs vertical multilayer... 
TERAHERTZ-WAVE GENERATION | ROOM-TEMPERATURE | PHYSICS, APPLIED | GAP | SILICON | RADIATION | CASCADE LASERS | Quantum dots | Gallium arsenide | Emission | Holes | Joining | Devices | Bonding | Indium arsenides
Journal Article
Journal of Micro/Nanolithography, MEMS, and MOEMS, ISSN 1932-5150, 1/2014, Volume 13, Issue 1, pp. 013004 - 013004
An optimized detector fabrication process is developed for resonator-quantum well infrared photodetectors (R-QWIPs). The R-QWIPs are the next generation of... 
resonator-quantum well infrared photodetectors focal plane array | inductively coupled plasma etching | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | INP | OPTICS | GaAs substrate removal | GAAS | DAMAGE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 08/2016, Volume 55, Issue 8, pp. 8 - 08RE05
We developed a spectral-domain optical coherence tomography (OCT) using a visible broadband light source (vis-OCT) for application to high-resolution and... 
PHYSICS, APPLIED | PHOTONIC CRYSTAL | High resolution | Optical Coherence Tomography | Broadband | Semiconductors | Photoresists | Spectra | Substrates | Light sources
Journal Article
Sensors & Actuators: A. Physical, ISSN 0924-4247, 01/2016, Volume 237, pp. 62 - 71
•A new type of 3D Hall sensor for magnetic field measurements was designed and a prototype was fabricated.•The sensor consists of six specially designed and... 
Three-axis magnetic field measurement | Small active volume | Planar Hall effect | High-accuracy Hall sensor | 3D Hall sensor | VECTOR SENSOR | FIELD | GAAS | ENGINEERING, ELECTRICAL & ELECTRONIC | INSTRUMENTS & INSTRUMENTATION | DEVICES | OFFSET | PROBE | Magnetic fields | Measuring instruments | Sensors | Reduction | Error analysis | Prototypes | Error detection | Hall effect | Noise measurement
Journal Article
Nanotechnology, ISSN 0957-4484, 11/2015, Volume 26, Issue 48, pp. 484002 - 6
We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single... 
III-V semiconconductors | photonic crystals | quantum photonics | integrated optical circuits | nanofabrication | plasma etching | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | DOT | NANOSCIENCE & NANOTECHNOLOGY | GAAS | Gallium arsenide | Resists | Etching | Nanostructure | Devices | Masks | Nanotechnology | Photonics
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 10/2008, Volume 41, Issue 19, pp. 193001 - 193001 (12)
Semiconductor nanotubes (SNTs) represent a new class of nanotechnology building blocks. They are formed by a combination of bottom-up and top-down approaches,... 
OPTICAL ACTUATION | PHYSICS, APPLIED | INGAAS/GAAS NANOTUBES | MICRO-ORIGAMI TECHNIQUE | NANOCORRUGATED QUANTUM-SYSTEMS | FABRICATION | ELASTIC-CONSTANTS | WALLED CARBON NANOTUBES | ELECTRON-SYSTEMS | UP IN(GA)AS/GAAS NANOTUBES | NANO-OBJECTS
Journal Article
Scientific Reports, ISSN 2045-2322, 01/2016, Volume 6, Issue 1, p. 18808
The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the... 
DISLOCATIONS | PHOTOLUMINESCENCE | MULTIDISCIPLINARY SCIENCES | O LUMINESCENCE CENTER | FABRICATION | GAAS | VACANCY DEFECTS | IMPLANTED GAN | PROSPECTS | EARTH-DOPED GAN | Ions | Integration | Oxygen | Optical properties | MATERIALS SCIENCE
Journal Article
Current Applied Physics, ISSN 1567-1739, 05/2016, Volume 16, Issue 5, pp. 587 - 592
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 04/2014, Volume 47, Issue 17, p. 173001
Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though many research efforts have been devoted to droplet epitaxy since then,... 
droplet epitaxy | molecular beam epitaxy | nanomaterials | quantum information | photovoltaics | HIGH-INDEX SURFACES | PHYSICS, APPLIED | GAAS NANOHOLES | OPTICAL-PROPERTIES | QUANTUM-DOT PAIRS | HOLED NANOSTRUCTURES | SELF-ORGANIZATION | DENSITY | INFRARED PHOTODETECTOR | GROWTH | FABRICATION
Journal Article