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physics, applied (7) 7
growth (6) 6
materials science, multidisciplinary (6) 6
engineering, electrical & electronic (5) 5
gaas-ge interface (5) 5
layers (5) 5
physics, condensed matter (5) 5
electronic-structure (4) 4
gaas/ge/gaas heterostructures (4) 4
germanium (4) 4
molecular-beam epitaxy (4) 4
surfaces (4) 4
antiphase domains (3) 3
electron irradiation (3) 3
gaas/ge (3) 3
gainp/gaas/ge solar cells (3) 3
gallium arsenide (3) 3
galliumarsenid (3) 3
molecular beam epitaxy (3) 3
photoluminescence (3) 3
pseudopotentials (3) 3
solar cells (3) 3
characterization and evaluation of materials (2) 2
chemistry (2) 2
crystallography (2) 2
diffraction (2) 2
displacement damage dose (2) 2
electronics and microelectronics, instrumentation (2) 2
epitaxialschicht (2) 2
epitaxy (2) 2
gaas/ge solar cell (2) 2
grenzfläche (2) 2
heterostruktur (2) 2
interfaces (2) 2
kristallorientierung (2) 2
materials science (2) 2
mocvd (2) 2
morphologie (2) 2
non-ionizing energy loss (2) 2
optical and electronic materials (2) 2
physics, multidisciplinary (2) 2
quality (2) 2
solar-cells (2) 2
solid state physics and spectroscopy (2) 2
superlattices (2) 2
surface morphology (2) 2
transmissionselektronenmikroskop (2) 2
wachstumsrate (2) 2
znse (2) 2
2d eqe artifacts (1) 1
al/gaas (1) 1
alas-gaas (1) 1
ald al2o3 (1) 1
algaas buffer layer (1) 1
aluminum oxide (1) 1
analysis (1) 1
anti-phase domain (1) 1
anti-phase domain-free growth (1) 1
anti-phase domains (1) 1
antiphase boundaries (1) 1
antiphasendomäne (1) 1
apds (1) 1
artificial band discontinuities (1) 1
astronomy, observations and techniques (1) 1
atomic layer deposition (1) 1
atomic layer epitaxy (1) 1
au/gaas (1) 1
aufdampfschicht (1) 1
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energy (1) 1
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Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 2005, Volume 71, Issue 15
...)-oriented structures, we find both valence- and conduction-band related near-band edge states localized at the Si/GaAs interface. In the (110... 
ALAS-GAAS | PSEUDOPOTENTIALS | PHYSICS, CONDENSED MATTER | ARTIFICIAL BAND DISCONTINUITIES | HETEROJUNCTIONS | SUPERLATTICES | GAAS-GE INTERFACE | MODEL | ELECTRONIC-STRUCTURE | LAYERS | Physics - Materials Science
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 02/2013, Volume 5, Issue 3, pp. 949 - 957
.... Moreover, ALD TiAlO alloy dielectric on epi-GaAs with AlGaAs buffer layer realized smooth interface between epi-GaAs layers and TiAlO dielectric, yielding a high... 
GaAs MOS | atomic layer deposition | elemental out-diffusion | hysteresis voltage | III-V surface passivation | epi-GaAs/Ge | effective dielectric constant | TiAlO alloy dielectric | OXIDE | QUALITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | IMPACT | IIII-V surface passivation | THICKNESS
Journal Article
中国物理:英文版, ISSN 1674-1056, 2011, Volume 20, Issue 1, pp. 647 - 652
.... A high quality GaAs/Ge interface and CaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains... 
分子束外延生长 | 薄膜质量 | 锗化合物 | 半导体光电器件 | 砷化镓薄膜 | 基板 | 高温退火 | 应变量子阱 | GaAs/Ge interface | Molecular beam epitaxy | anti-phase domain | JUNCTION SOLAR-CELLS | molecular beam epitaxy | DOMAIN-FREE GROWTH | CHEMICAL VAPOR-DEPOSITION | QUALITY | TEMPERATURE | PHYSICS, MULTIDISCIPLINARY | FUTURE
Journal Article
Materials Letters, ISSN 0167-577X, 10/2015, Volume 156, pp. 105 - 108
Development of high quality p-type epitaxial gallium–arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next... 
P-epitaxial-GaAs | GaAs/Ge integration | AlGaAs buffer layer | ALD Al2O3 | CMOS | PHYSICS, APPLIED | INTERFACE PROPERTIES | FILMS | SURFACE PASSIVATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | RAMAN | Gallium arsenides | Gallium arsenide | Epitaxy | Germanium | Surface roughness | Density | Zinc | Aluminum oxide
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1996, Volume 163, Issue 3, pp. 195 - 202
The formation of antiphase domains (APDs) in GaAs grown on Ge(001) misoriented towards 〈110〉 has been studied as a function of substrate misorientation angle,... 
PRESSURE | MOLECULAR-BEAM EPITAXY | GROWTH | INTERFACES | CRYSTALLOGRAPHY | GAAS/GE/GAAS HETEROSTRUCTURES | LAYERS
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 02/2000, Volume 61, Issue 8, pp. 5416 - 5422
Using an nb initio pseudopotential approach, we have investigated the existence of localized interface states in epitaxial Al/caAs and Au/GaAs(100) junctions... 
PSEUDOPOTENTIALS | PHYSICS, CONDENSED MATTER | ENERGY | GROUND-STATE | GAAS-GE INTERFACE | SCHOTTKY-BARRIER HEIGHTS | AL/GAAS | ELECTRONIC-STRUCTURE | SURFACES
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 0163-1829, 10/2000, Volume 62, Issue 16, pp. R10622 - R10625
Journal Article
PHYSICAL REVIEW B, ISSN 2469-9950, 10/2000, Volume 62, Issue 16, pp. 10622 - 10625
A Koster-Slater approach to the problem of localized states at semiconductor interfaces has been developed... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | GAAS-GE INTERFACE | ZNSE | ELECTRONIC-STRUCTURE | SURFACES
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 02/1996, Volume 53, Issue 8, pp. 4539 - 4543
The electronic structures and stability of the alpha-Sn/InSb(111)A nonpolar-polar interface are investigated with use of first-principles norm-conserving pseudopotential calculations... 
PSEUDOPOTENTIALS | PHYSICS, CONDENSED MATTER | GAAS/ALAS | SUPERLATTICES | BAND OFFSETS | GROWTH | GAAS-GE INTERFACE | DIFFRACTION | MODEL | DIPOLE | SURFACES
Journal Article
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, ISSN 0253-4177, 06/2005, Volume 26, pp. 192 - 195
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2010, Volume 97, Issue 12, pp. 121909 - 121909-3
... with increasing temperature, which arises from the trapping states around Ge-GaInP interface due to Ge... 
GA0.5IN0.5P | GA0.52IN0.48P | PHYSICS, APPLIED | SOLAR-CELLS | PHOTOLUMINESCENCE | TEMPERATURE-DEPENDENCE | DISORDER | PHASE EPITAXY | MOVPE | GAAS/GE HETEROSTRUCTURES
Journal Article
Energy science & engineering, ISSN 2050-0505, 2018, Volume 6, Issue 3, pp. 144 - 153
Journal Article
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, ISSN 0734-211X, 05/1999, Volume 17, Issue 3, pp. 1003 - 1010
A diode structure consisting of a polar epilayer on a nonpolar substrate grown by metalorganic vapor phase epitaxy often faces problems of antiphase domain... 
TRANSISTORS | PHYSICS, APPLIED | SOLAR-CELLS | PHOTOLUMINESCENCE | UNDOPED GAAS | MOBILITY | MOLECULAR-BEAM EPITAXY | INTERFACES | GAAS/GE/GAAS HETEROSTRUCTURES | ANTIPHASE DOMAINS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
本論文主要目的在於運用三光複繞射方法研究半導體介面晶格常數的變化情形,試圖找出一個非破壞性的測量方式。... 
晶格常數 | X光 | Au/GaAs | diffraction | 繞射 | lattice-constant | xray | 金/砷化鎵 | interface | 介面
Dissertation
Nuclear Inst. and Methods in Physics Research, B, ISSN 0168-583X, 07/2013, Volume 307, pp. 362 - 365
The displacement damage dose approach for analyzing and modeling the performance degradation of triple-junction GaInP/GaAs/Ge solar cells in a space radiation... 
GaInP/GaAs/Ge solar cells | Displacement damage dose | Non-ionizing energy loss | Electron irradiation | Proton irradiation | SPACE | INSTRUMENTS & INSTRUMENTATION | NUCLEAR SCIENCE & TECHNOLOGY | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | PHYSICS, NUCLEAR
Journal Article
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, ISSN 1071-1023, 05/1993, Volume 11, Issue 3, pp. 857 - 860
Lattice-matched GaAs and InGaP structures on strain-relieved Ge/graded GeSi/Si without increasing the threading dislocation density at the III-V/Ge interface have been successfully grown... 
PHYSICS, APPLIED | GROWTH | GAAS/GE/GAAS HETEROSTRUCTURES | LAYERS
Journal Article
by 何巍
廊坊师范学院学报:自然科学版, ISSN 1674-3229, 2018, Volume 18, Issue 1, pp. 28 - 32
... materials (GaAs/Ge,GaInP/ Ge), which are mainly antiphase domains and interdiffusion between the heterogeneous interfaces. It is proposed that the high temperature pretreatment of the Ge substrate in As or P atmosphere can effectively avoid the formation of antiphase domains. The interdiffusion of atoms between heterogeneous interfaces can be effectively suppressed... 
Ge;GaAs;GaInP;异质外延
Journal Article
因為GaAs太陽電池有高轉換效率、對溫度變化與宇宙射線有良好抵抗力等 優點,所以非常適合用於人造衛星上。然而GaAs太陽電池也有一些缺點, 例如GaAs基板太貴,太重及太脆。因此便宜、有相似晶格常數的Ge晶片成 為最佳的代用品。將在GaAs晶片上的 P/N接面和在 N型Ge晶片上的GaAs 的... 
砷化鎵/鍺太陽電池 | atomic layer epitaxy | 原子層磊晶法 | 太陽電池 | GaAs/Ge solar cell | passive-Ge | 非活性化砷化鎵/鍺介面 | solar cell
Dissertation
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