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physica status solidi (b), ISSN 0370-1972, 08/2018, Volume 255, Issue 8, pp. 1800133 - n/a
We have modulated the photocatalytic properties of GaN‐based two‐dimensional (2D) heterostructures including GaN/MoSe2 and GaN/WS2 (WSe2) by adjusting biaxial... 
photocatalytic properties | GaN/WS2 | GaN/MoSe2 | hybrid density functional | GaN/WSe2 | GaN/MoSe | GaN/WS | GaN/WSe | Physics, Condensed Matter | Physical Sciences | Physics | Science & Technology
Journal Article
01/2019, ISBN 3038978434
eBook
IEEE Electron Device Letters, ISSN 0741-3106, 04/2015, Volume 36, Issue 4, pp. 375 - 377
Journal Article
2013, Di 1 ban., ISBN 9787210046110, 6, 5, 2, 208
Book
Applied surface science, ISSN 0169-4332, 10/2016, Volume 383, pp. 324 - 345
Journal Article
IEEE electron device letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 165 - 168
Journal Article
Journal of physics. D, Applied physics, ISSN 1361-6463, 04/2018, Volume 51, Issue 16, p. 163001
Gallium nitride 9GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based... 
GaN-on-Si | power circuits | GaN | Physical Sciences | Physics | Science & Technology | Physics, Applied
Journal Article
Materials science in semiconductor processing, ISSN 1369-8001, 05/2018, Volume 78, pp. 75 - 84
Journal Article
Crystal research and technology (1979), ISSN 0232-1300, 08/2018, Volume 53, Issue 8, pp. 1800042 - n/a
The study of GaN morphology and structure modification due to the variation of the nitridation temperature are reported. GaN is obtained by nitridation of GaAs... 
CVD | GaN wurtzite structure | GaN zinc‐blende structure | nitridation | GaN(1−x)Asx | GaN | GaN zinc-blende structure | Crystallography | Physical Sciences | Science & Technology
Journal Article