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IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 165 - 168
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 01/2012, Volume 100, Issue 1, p. 13504
We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a... 
GAN | PHYSICS, APPLIED | GROWTH
Journal Article
2013, Di 1 ban., ISBN 9787210046110, 6, 5, 2, 208
Book
2019, ISBN 3038978434
eBook
2009, Di 1 ban., ISBN 9787534832024, [3], 3, 3, 412
Book
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 11/2011, Volume 99, Issue 19, p. 193504
Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar... 
PHYSICS, APPLIED | AL2O3 | PASSIVATION | GAN | ALGAN/GAN
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 12/2014, Volume 90, Issue 23
In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at... 
VAPOR-PHASE EPITAXY | DOPED GAN | PHYSICS, CONDENSED MATTER | FREESTANDING GAN | ENERGY | PHOTOLUMINESCENCE | MOBILITY | WURTZITE GAN | VACANCIES | DOMINANT ACCEPTOR | TEMPLATES
Journal Article
Reports on Progress in Physics, ISSN 0034-4885, 04/2016, Volume 79, Issue 5, pp. 056501 - 56545
Journal Article
2007, Zhongguo ren min da xue ming jia wen cong, ISBN 9787300083551
Book
2012, Di 1 ban., ISBN 9787530548585, 205
Book
Applied Physics Letters, ISSN 0003-6951, 08/2008, Volume 93, Issue 5, pp. 051102 - 051102-3
The authors report room temperature polariton lasing at λ ∼ 345 nm in a hybrid Al In N ∕ Al Ga N multiple quantum well microcavity (MQW-MC) containing a Ga N ∕... 
GAN | PHYSICS, APPLIED | LASERS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2010, Volume 57, Issue 11, pp. 3050 - 3058
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 01/2013, Volume 21, Issue 1, pp. A53 - A59
Linear polarized electroluminescence was investigated for semipolar (30 (3) over bar1) and (30 (3) over bar(1) over bar) InGaN light-emitting diodes (LEDs)... 
GAN | OPTICS
Journal Article
Surface Science Reports, ISSN 0167-5729, 11/2015, Volume 70, Issue 3, pp. 380 - 423
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2017, Volume 111, Issue 15, p. 152102
This letter reports the implementation of double-drift-layer (DDL) design into GaN vertical Schottky barrier diodes (SBDs) grown on free-standing GaN... 
PT/GAN | PHYSICS, APPLIED
Journal Article
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