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IEEE Transactions on Power Electronics, ISSN 0885-8993, 05/2014, Volume 29, Issue 5, pp. 2453 - 2461
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 04/2014, Volume 29, Issue 4, pp. 1977 - 1985
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2015, Volume 62, Issue 2, pp. 270 - 277
Gallium nitride (GaN) devices are gathering momentum, with a number of recent market introductions for a wide range of applications such as point-of-load... 
MOSFET | gallium nitride (GaN) | Capacitors | high frequency | Switches | Zero voltage switching | packaging | Gallium nitride | Avalanche | cascode | voltage distribution | Switching loss | Silicon | soft-switching | PHYSICS, APPLIED | HEMT | POWER | ENGINEERING, ELECTRICAL & ELECTRONIC | Measurement | Power converters | Usage | Gallium nitrate | Field-effect transistors | Voltage | Innovations | Electric properties
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 05/2014, Volume 29, Issue 5, pp. 2208 - 2219
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 10/2019, pp. 1 - 1
This paper presents the study on the self-sustained oscillation of cascode gallium nitride (GaN) high-electron-mobility transistors (HEMTs) which occurs under... 
MOSFET | gallium nitride (GaN) | DH-HEMTs | Cascode GaN HEMTs | selfsustained oscillation | Logic gates | High-Electron-Mobility Transistors (HEMTs) | Gallium nitride | MODFETs | Oscillators | short-circuit
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 11/2017, Volume 32, Issue 11, pp. 8743 - 8750
Journal Article
IEEE Transactions on Industrial Electronics, ISSN 0278-0046, 12/2019, pp. 1 - 1
Systematic characterizations of a cascode device with a low-voltage (LV) enhance-mode (E-mode) p-GaN gate HEMT as the control device and a high-voltage (HV)... 
cascode device | depletion-mode | SiC JFET | normally-off | p-GaN gate HEMT | 1200-V | enhancement-mode
Journal Article
IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, 09/2016, Volume 4, Issue 3, pp. 815 - 823
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, pp. 272 - 275
We report the state-of-the-art performance of deep-submicrometer gate length dual-gate GaN HEMTs and cascode GaN HEMTs with 10× reduced gate-to-drain feedback... 
Microwave | MODFETs | Gallium nitride | Radio frequency | Cacode | PAE | Dualgate | HEMTs | Logic gates | Gain | Power generation | GaN HEMT | Power | cascode | GANHEMTS | TRANSISTORS | ALGAN/GAN HEMTS | PERFORMANCE | power | dual-gate | microwave | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 10/2019, Volume 34, Issue 10, pp. 10166 - 10179
Owing to the high operation frequency and fast switching speed, gallium nitride (GaN) devices are prone to the false turn-on phenomenon, causing high switching... 
Analytical models | MOSFET | induced voltage evaluation | on">false turn-on | suppression guidelines | Logic gates | half-bridge configuration | Silicon | Cascode gallium nitride (GaN) devices | Gallium nitride | Integrated circuit modeling | HEMT | false turn-ON | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Optik, ISSN 0030-4026, 02/2019, Volume 178, pp. 909 - 917
In this paper, a novel optically-activated cascode structure is proposed to be used with a normally-on gallium nitride (GaN) field-effect transistor (FET)... 
Gallium nitride field-effect transistor (GaN FET) | Optical switch (OS) | Cascode configuration | Packaging parasitic inductance | Wide bandgap power semiconductor devices | HEMT | OPTICS
Journal Article
Materials Science & Engineering B, ISSN 0921-5107, 08/2015, Volume 198, pp. 43 - 50
A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode... 
DC-DC conversion | Power semiconductor device | High voltage | GaN cascode | HEMT | GaN cascade | BOOST CONVERTER | PHYSICS, CONDENSED MATTER | OPERATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | GAN HEMT | Gallium nitrate | Switches | Silicon carbide | Circuits | Gallium nitrides | Energy conversion | Converters | Switching | MOSFETs
Journal Article
ETRI Journal, ISSN 1225-6463, 02/2016, Volume 38, Issue 1, pp. 133 - 140
This paper presents a method of parasitic inductance reduction for high‐speed switching and high‐efficiency operation of a cascode structure with a low‐voltage... 
switching speed | GaN cascode FET | switching loss | efficiency | boding wire | parasitic inductance | Parasitic inductance | Boding wire | Efficiency | Switching speed | Switching loss | VOLTAGE | POWER | TELECOMMUNICATIONS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Thermal Engineering, ISSN 1359-4311, 04/2016, Volume 98, pp. 1003 - 1012
Journal Article
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