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physica status solidi (b), ISSN 0370-1972, 05/2018, Volume 255, Issue 5, pp. 1700421 - n/a
In this work terahertz (THz) electroluminescence of shallow impurities in AlGaN/GaN high electron mobility transitor (HEMT) structures are studied at... 
terahertz electroluminescence | AlGaN/GaN HEMT structures | GaN shallow impurities
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 04/2019, Volume 93, pp. 280 - 283
Terahertz (THz) electroluminescence of shallow impurities in the AlGaN/GaN HEMT structures grown either on sapphire or silicon carbide substrates were studied... 
Emission | Spectroscopy | HEMT structures | Terahertz | AlGaN/GaN | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | ENGINEERING, ELECTRICAL & ELECTRONIC | Silicon carbide
Journal Article
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, ISSN 2162-8769, 11/2019, Volume 9, Issue 1, p. 15009
Understanding the nature of defects and their role on fundamental physical properties of semiconductors is essential to obtain the necessary material control... 
PHYSICS, APPLIED | EFFECTIVE-MASS | PHOTOLUMINESCENCE | SPECTROSCOPY | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | GROWTH | HVPE GAN | ALGAN/GAN HETEROSTRUCTURES
Journal Article
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, ISSN 0370-1972, 05/2018, Volume 255, Issue 5
In this work terahertz (THz) electroluminescence of shallow impurities in AlGaN/GaN high electron mobility transitor (HEMT) structures are studied at... 
terahertz electroluminescence | PHYSICS, CONDENSED MATTER | GaN shallow impurities | CARBON | GaN HEMT structures | GAN | SILICON | P-TYPE GERMANIUM | QUANTUM-CASCADE LASERS | AlGaN
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2010, Volume 96, Issue 14, pp. 142114 - 142114-3
Employing a Koopmans corrected density functional method, we find that the metal-site acceptors Mg, Be, and Zn in GaN and Li in ZnO bind holes in deep levels... 
gallium compounds | ENERGY | PHYSICS, APPLIED | ground states | effective mass | magnesium | IMPURITIES | deep levels | impurity states | semiconductor doping | lithium | DOPED GAN | II-VI semiconductors | density functional theory | GROUP-I ELEMENTS | beryllium | zinc compounds | wide band gap semiconductors | doping profiles | zinc | III-V semiconductors
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 03/2010, Volume 107, Issue 5, pp. 054305 - 054305-5
We have performed a theoretical calculation of the shallow-donor impurity states in cylindrical zinc-blende (ZB) InGaN/GaN asymmetric coupled quantum dots... 
INN | STATES | PHYSICS, APPLIED | PHOTOLUMINESCENCE | GAN | LOCALIZED EXCITONS | Indium | Gallium nitrate | Analysis | Quantum theory | Electric properties
Journal Article
Journal of Nanomaterials, ISSN 1687-4110, 2015, Volume 2015, pp. 1 - 9
Within the framework of the effective mass approximation, barrier thickness and hydrostatic pressure effects on the ground-state binding energy of hydrogenic... 
SHALLOW-DONOR IMPURITY | GAN | EXCITON-STATES | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | TRANSITIONS | ENERGIES | DEPENDENCE
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 08/2013, Volume 422, pp. 47 - 50
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 02/2013, Volume 410, Issue 1, pp. 49 - 52
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 0163-1829, 11/2003, Volume 68, Issue 19, pp. 1952011 - 1952016
Optically detected magnetic resonance (ODMR) has been performed on Si-doped GaN homoepitaxial layers grown by organometallic chemical vapor deposition on... 
RECOMBINATION | PHYSICS, CONDENSED MATTER | TRANSISTORS | CARBON | LUMINESCENCE | ALLOYS | VAPOR-PHASE-EPITAXY | WURTZITE GAN | DONORS | IMPURITIES | CURRENT COLLAPSE
Journal Article
SOLID STATE COMMUNICATIONS, ISSN 0038-1098, 09/2011, Volume 151, Issue 17, pp. 1175 - 1178
We have investigated the effects of the nitrogen and indium concentrations on the photoionization crosssection and binding energy of shallow donor impurities... 
BAND PARAMETERS | PHYSICS, CONDENSED MATTER | Quantum-well wires | Impurity | Photoionization | GAN | FIELD | OPTICAL GAIN | WELL WIRE | RANGE
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2016, Volume 456, pp. 101 - 107
Journal Article
Physical Review Letters, ISSN 0031-9007, 02/2002, Volume 88, Issue 6, pp. 66402/1 - 66402/4
Based on an ab initio calculation, we propose a possible shallowing of a nitrogen (N) donor in diamond, in contrast to the traditional thinking that it is very... 
PHOSPHORUS | MOLECULAR-DYNAMICS | DEFECTS | TOTAL-ENERGY | CHEMICAL-VAPOR-DEPOSITION | PHYSICS, MULTIDISCIPLINARY | N-TYPE DOPANTS | GAN | IMPURITY | VACANCY | EMISSION
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2002, Volume 91, Issue 10 I, pp. 6729 - 6738
Cathodoluminescence (CL) imaging and temperature-dependent cathodoluminescence spectroscopy (CLS) have been used to probe the spatial distribution and energies... 
VAPOR-PHASE EPITAXY | DOPED GAN | SAPPHIRE | PHYSICS, APPLIED | FILMS | FINE-STRUCTURE | LUMINESCENCE | MOLECULAR-BEAM EPITAXY | WURTZITE GAN | SHALLOW DONORS | THICK GAN LAYERS | Usage | Research | Electron microscopy | Cathodoluminescence | Gallium nitrate | Electric properties
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 08/2009, Volume 24, Issue 8, pp. 085004 - 085004 (7)
A theoretical simulation of admittance spectroscopy ( AS) has been conducted to determine a method to analyze shallow levels in semiconductors. It is quite... 
PHYSICS, CONDENSED MATTER | GAN-MG | ACCEPTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | BAND OFFSETS | CONDUCTION | IMPURITY LEVELS | SCHOTTKY BARRIERS | QUANTUM-WELLS | SPECTRA | ZNTE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 07/2013, Volume 421, pp. 73 - 76
Within the framework of the effective mass scheme, the ground-state binding energy of hydrogenic shallow-donor impurity in wurtzite (WZ) (In,Ga)N/GaN parabolic... 
Parabolic wire | Binding energy | Magnetic effect | HYDROGENIC IMPURITY STATES | QUANTUM-WELL WIRES | ZINCBLENDE INXGA1-XN/GAN | PHYSICS, CONDENSED MATTER | DONOR IMPURITY | SHALLOW-DONOR | DOT | Magnetic fields | Quantum wells | Analysis | Force and energy | Indium gallium nitrides | Condensed matter | Gallium nitrides | Mathematical models | Density
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 10/2013, Volume 427, pp. 106 - 109
Simultaneous study of magnetic field and impurity's position effects on the ground-state shallow-donor binding energy in GaN│InGaN│GaN (core│well│shell)... 
Magnetic field | Binding energy | Spherical layer | SHALLOW DONOR | PHYSICS, CONDENSED MATTER | WIRES | GROUND-STATE | DOT-QUANTUM-WELL | CDS/HGS/CDS | HYDROGENIC IMPURITY STATES | ZINCBLENDE INXGA1-XN/GAN | PRESSURE | CONFINEMENT | Magnetic fields | Quantum wells | Force and energy | Thin films | Quantum confinement | Indium gallium nitrides | Condensed matter | Mathematical analysis | Gallium nitrides
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2006, Volume 89, Issue 9, pp. 092107 - 092107-3
Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the... 
YELLOW LUMINESCENCE | SI-DOPED ALN | PHYSICS, APPLIED | GAN | COMPLEXES | CONDUCTION | VACANCIES | BAND
Journal Article
Solid State Communications, ISSN 0038-1098, 01/2015, Volume 201, pp. 5 - 8
The shallow-donor ground-state binding energy of wurtzite strained (In,Ga)N asymmetric coupled quantum wells (ACQW) is calculated. Within the effective-mass... 
A. Semiconductor | A. Coupled QWs | D. Electrical properties | TRANSITION | PHYSICS, CONDENSED MATTER | Semiconductor | STATES | Electrical properties | HYDROSTATIC-PRESSURE | BARRIER | INGAN/GAN QUANTUM-WELL | Coupled QWs | SPHERICAL QD | Quantum wells | Force and energy | Chemical properties | Electric fields | Electric properties
Journal Article
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