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Angewandte Chemie (International ed.), ISSN 1433-7851, 2015, Volume 54, Issue 27, pp. 7770 - 7788
Journal Article
1992, ISBN 3540936572, v.
Book
1966, Topics in inorganic and general chemistry, ISBN 0444405305, Volume monograph 5., viii, 302
Book
Science (American Association for the Advancement of Science), ISSN 1095-9203, 2014, Volume 344, Issue 6187, pp. 1005 - 1009
Journal Article
Nature Materials, ISSN 1476-1122, 11/2016, Volume 15, Issue 11, pp. 1153 - 1154
Journal Article
Advanced Materials, ISSN 0935-9648, 05/2016, Volume 28, Issue 19, pp. 3768 - 3776
A type of single‐crystal gallium nitride mesoporous membrane is fabricated and its supercapacitor properties are demonstrated for the first time. The... 
crystals | gallium nitride | energy storage | supercapacitors | mesoporous | Gallium nitrate | Capacitors | Electrodes | Supercapacitors | Electrode materials | Gallium nitrides | Crystals | Energy storage | Cycles | Nitrides | Single crystals | Membranes
Journal Article
Nature photonics, ISSN 1749-4893, 2013, Volume 7, Issue 12, pp. 963 - 968
Near-infrared lasers are important for optical data communication, spectroscopy and medical diagnosis. Semiconductor nanowires offer the possibility of... 
MINORITY-CARRIER LIFETIME | PHYSICS, APPLIED | OPTICS | Aluminum gallium arsenides | Gallium arsenides | Semiconductors | Gallium arsenide | Lasers | Optoelectronic devices | Nanostructure | Devices | Nanowires
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2013, Volume 60, Issue 10, pp. 3060 - 3066
Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology.... 
lateral transistors | Gallium nitride (GaN) | Logic gates | HEMTs | Apertures | vertical transistors | Silicon | Gallium nitride | Aluminum gallium nitride | VOLTAGE | PHYSICS, APPLIED | GAN | ENHANCEMENT | HEMTS | CAVET | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | Measurement | Silicon compounds | Field-effect transistors | Gallium nitrate | Voltage | Innovations | Electric properties
Journal Article