Articles

UofT Libraries is getting a new library services platform in January 2021.
Learn more about the change.

Search Articles

Advanced search
Help

Catalogue

Articles

Databases

X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (38715) 38715
Conference Proceeding (22086) 22086
Newspaper Article (7454) 7454
Newsletter (1103) 1103
Magazine Article (927) 927
Web Resource (554) 554
Government Document (493) 493
Dissertation (343) 343
Book Chapter (298) 298
Trade Publication Article (153) 153
Book / eBook (138) 138
Publication (61) 61
Book Review (14) 14
Reference (12) 12
Transcript (5) 5
Journal / eJournal (2) 2
Library Holding (1) 1
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
gallium arsenide (53121) 53121
science & technology (20950) 20950
physics (20105) 20105
physical sciences (17117) 17117
physics, applied (12290) 12290
exact sciences and technology (11938) 11938
technology (11841) 11841
gallium arsenides (11370) 11370
galliumarsenid (9246) 9246
materials science (9218) 9218
engineering (8875) 8875
engineering, electrical & electronic (7122) 7122
indium gallium arsenide (6211) 6211
electronics (5603) 5603
applied sciences (5487) 5487
semiconductors (5243) 5243
substrates (5154) 5154
optics (4669) 4669
lasers (4570) 4570
analysis (4494) 4494
materials science, multidisciplinary (4360) 4360
research (4189) 4189
gallium compounds (4026) 4026
arsenic compounds (4005) 4005
physics, condensed matter (3946) 3946
silicon (3900) 3900
epitaxy (3856) 3856
arsenides (3835) 3835
semiconductor electronics. microelectronics. optoelectronics. solid state devices (3819) 3819
quantum dots (3814) 3814
indium phosphide (3600) 3600
transistors (3598) 3598
quantum wells (3561) 3561
photovoltaic cells (3441) 3441
photoluminescence (3380) 3380
drei-fünf-verbindung (3359) 3359
temperature (3333) 3333
voltage (3309) 3309
pnictides (3166) 3166
molecular beam epitaxy (2940) 2940
semiconductor lasers (2824) 2824
electrons (2821) 2821
optical properties (2816) 2816
frequency (2796) 2796
condensed matter: electronic structure, electrical, magnetic, and optical properties (2731) 2731
indium arsenides (2717) 2717
fets (2647) 2647
semiconductor devices (2638) 2638
fabrication (2587) 2587
hemts (2527) 2527
heterojunction bipolar transistors (2416) 2416
indiumverbindung (2325) 2325
indium compounds (2307) 2307
inventors (2286) 2286
mmics (2240) 2240
mesfets (2207) 2207
epitaxial growth (2185) 2185
cross-disciplinary physics: materials science; rheology (2140) 2140
semiconductor materials (2136) 2136
radio frequency (2106) 2106
usage (2093) 2093
indium (2025) 2025
annealing (1960) 1960
gaas (1948) 1948
power generation (1948) 1948
condensed matter: structure, mechanical and thermal properties (1928) 1928
etching (1879) 1879
molekularstrahlepitaxie (1876) 1876
electric properties (1868) 1868
gallium arsenide semiconductors (1857) 1857
diodes (1856) 1856
molecular beam epitaxial growth (1840) 1840
quantentopf (1819) 1819
aluminium arsenides (1798) 1798
circuits (1783) 1783
bandwidth (1756) 1756
chemistry (1752) 1752
absorption (1727) 1727
power amplifiers (1725) 1725
thin films (1709) 1709
solar cells (1703) 1703
heterojunctions (1700) 1700
aluminiumverbindung (1692) 1692
devices (1689) 1689
fundamental areas of phenomenology (1684) 1684
indium gallium arsenides (1671) 1671
doping (1643) 1643
science & technology - other topics (1641) 1641
integrated circuits (1604) 1604
drei-fuenf-verbindung (1600) 1600
gain (1594) 1594
gallium (1543) 1543
aluminium compounds (1538) 1538
modfets (1537) 1537
photolumineszenz (1516) 1516
aluminum gallium arsenides (1503) 1503
solar energy (1503) 1503
temperature dependence (1496) 1496
photonic band gap (1459) 1459
nanoscience & nanotechnology (1431) 1431
more...
Library Location Library Location
Library Location Library Location
X
Sort by Item Count (A-Z)
Filter by Count
Online Resources - Online (84) 84
UTL at Downsview - May be requested (83) 83
Engineering & Comp. Sci. - Stacks (63) 63
Gerstein Science - Stacks (21) 21
Collection Dvlpm't (Acquisitions) - Closed Orders (4) 4
Engineering & Comp. Sci. - May be requested in 6-10 wks (4) 4
Physics - Storage (3) 3
Aerospace - Stacks (2) 2
Physics - Stacks (2) 2
Chemistry (A D Allen) - Stacks (1) 1
Collection Dvlpm't (Acquisitions) - Vendor file (1) 1
Gerstein Science - Periodical Stacks (1) 1
UofT at Mississauga - Stacks (1) 1
more...
Language Language
Language Language
X
Sort by Item Count (A-Z)
Filter by Count
English (72003) 72003
Chinese (342) 342
Japanese (182) 182
Russian (51) 51
German (35) 35
French (31) 31
Portuguese (17) 17
Spanish (15) 15
Ukrainian (9) 9
Polish (6) 6
Turkish (5) 5
Italian (4) 4
Norwegian (2) 2
Dutch (1) 1
Korean (1) 1
Welsh (1) 1
more...
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


1. Full Text Gallium arsenide solar cells grown at rates exceeding 300 µm h -1 by hydride vapor phase epitaxy
by Metaferia, Wondwosen and Schulte, Kevin L and Simon, John and Johnston, Steve and Ptak, Aaron J and National Renewable Energy Lab. (NREL), Golden, CO (United States)
Nature communications, ISSN 2041-1723, 07/2019, Volume 10, Issue 1, pp. 3361 - 8
Solar cells | Growth conditions | Gallium | Growth rate | Intermetallic compounds | Gallium arsenide | Circuits | Epitaxy | Vapor phases | Gallium indium phosphide | Vapors | Hydrides | Indium | Vapor phase epitaxy | Photovoltaic cells | Efficiency | Kinetics | Epitaxial growth | Deposition | Arsenides | Energy conversion efficiency | Index Medicus | MATERIALS SCIENCE | solar cells | SOLAR ENERGY | electronic devices
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
2. Full Text Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells
by Li, Zijia and Kim, Tae Hak and Han, Sung Yong and Yun, Yeo‐Jun and Jeong, Seonghwa and Jo, Bonghyun and Ok, Song Ah and Yim, Woongbin and Lee, Seung Hu and Kim, Kangho and Moon, Sunghyun and Park, Ji‐Yong and Ahn, Tae Kyu and Shin, Hyunjung and Lee, Jaejin and Park, Hui Joon
Advanced energy materials, ISSN 1614-6832, 02/2020, Volume 10, Issue 6, pp. 1903085 - n/a
gallium arsenide | phase segregation | perovskite/GaAs tandem cells | thin‐film flexible tandem cells | wide‐bandgap perovskites | Physical Sciences | Chemistry | Materials Science | Technology | Materials Science, Multidisciplinary | Physics, Condensed Matter | Chemistry, Physical | Energy & Fuels | Physics | Science & Technology | Physics, Applied | Solar cells | Intermetallic compounds | Gallium arsenide | Gallium indium phosphide | Perovskites | Junction diodes | Flexibility | Lattice matching | Gallium phosphides | Energy gap | Photovoltaic cells | Efficiency | Performance enhancement | Tandem configuration | Feasibility | Commercialization
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
3. Full Text Physics-based simulation study of high-performance gallium arsenide phosphide–indium gallium arsenide tunnel field-effect transistor
by Raad, Bhagwan Ram and Sharma, Dheeraj and Nigam, Kaushal and Kondekar, Pravin
Micro & nano letters, ISSN 1750-0443, 7/2016, Volume 11, Issue 7, pp. 366 - 368
gallium arsenide | tunnel transistors | GaAsP−InGaAs | ambipolar current | threshold voltage | indium compounds | switching operation | source material | physics‐based simulation | high‐performance gallium arsenide phosphide–indium gallium arsenide tunnel field‐effect transistor | high‐performance ultralow‐power applications | ON‐state current | subthreshold slope | OFF‐state current | III‐V semiconductors | drain‐channel material | field effect transistors | semiconductor device models | Science & Technology - Other Topics | Materials Science | Nanoscience & Nanotechnology | Technology | Materials Science, Multidisciplinary | Science & Technology | Indium gallium arsenides | Arsenic | Tunnels (transportation) | Semiconductor devices | Field effect transistors | Gallium arsenide | Drains | Channels
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
4. Full Text Gallium arsenide (GaAs) quantum photonic waveguide circuits
by Wang, Jianwei and Santamato, Alberto and Jiang, Pisu and Bonneau, Damien and Engin, Erman and Silverstone, Joshua W and Lermer, Matthias and Beetz, Johannes and Kamp, Martin and Höfling, Sven and Tanner, Michael G and Natarajan, Chandra M and Hadfield, Robert H and Dorenbos, Sander N and Zwiller, Val and O’Brien, Jeremy L and Thompson, Mark G
Optics communications, ISSN 0030-4018, 09/2014, Volume 327, pp. 49 - 55
Quantum optics | Integrated quantum photonics | Entanglement | Pockels effect | GaAs waveguide | Quantum interference | Optics | Physical Sciences | Science & Technology | Waveguides | Lithium niobate | Gallium arsenide | Astronomy | Detectors | Mach-Zehnder interferometers | Platforms | Gallium arsenides | Circuits | Visibility | Photonics
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
5. Full Text Basic physical properties of cubic boron arsenide
by Kang, Joon Sang and Li, Man and Wu, Huan and Nguyen, Huuduy and Hu, Yongjie
Applied physics letters, ISSN 0003-6951, 09/2019, Volume 115, Issue 12, p. 122103
Physical Sciences | Physics | Science & Technology | Physics, Applied | Temperature dependence | Semiconductor materials | Shear modulus | Intermetallic compounds | Electromagnetic absorption | Gallium nitrides | Tables (data) | Refractivity | Electronics | Modulus of elasticity | Poissons ratio | Physical properties | Photonics | Single crystals | Thermal expansion | Boron | Energy gap | Optical properties | Thermal conductivity | Thermal management | Arsenides
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
6. Full Text Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide
by Tanaka, Akiyo
Toxicology and applied pharmacology, ISSN 0041-008X, 2004, Volume 198, Issue 3, pp. 405 - 411
Semiconductor materials | Intratracheal instillations | Gallium arsenide | Indium arsenide | Aluminium gallium arsenide | Pulmonary toxicity | Hamster | Pharmacology & Pharmacy | Toxicology | Life Sciences & Biomedicine | Science & Technology | Biological and medical sciences | Medical sciences | Lung Diseases - chemically induced | Aluminum Compounds - toxicity | Animals | Arsenicals | Humans | Occupational Exposure | Semiconductors - adverse effects | Female | Male | Gallium - toxicity | Indium - toxicity | Arsenic Poisoning | Index Medicus
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
7. Full Text Microscopic Nanomechanical Dissipation in Gallium Arsenide Resonators
by Hamoumi, M and Allain, P.E and Hease, W and Gil-Santos, E and Morgenroth, L and Gérard, B and Lemaître, A and Leo, G and Favero, I
Physical review letters, ISSN 0031-9007, 05/2018, Volume 120, Issue 22, pp. 223601 - 223601
Physics, Multidisciplinary | Physical Sciences | Physics | Science & Technology | Dissipation factor | Damping | Q factors | Intermetallic compounds | Gallium arsenide | Energy dissipation | Atomic layer epitaxy | Variation | Resonators | Cryogenic temperature | Arsenides | Aluminum oxide | Physics - Mesoscale and Nanoscale Physics | Condensed Matter | Other
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
8. Full Text Effect of changing Gallium arsenide content on Gallium arsenide–polymer composite varistors
by Bidadi, H and Mohammadi Aref, S and Ghafouri, M and Parhizkar, M and Olad, A
The Journal of physics and chemistry of solids, ISSN 0022-3697, 08/2013, Volume 74, Issue 8, pp. 1169 - 1173
D. Microstructure | A. Polymers | A. Semiconductors | D. Electrical properties | Physics, Condensed Matter | Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Physics | Science & Technology | Polymer industry | Invisibility | Polymers | Gallium arsenide | Analysis | Arsenic compounds
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
9. Gallium arsenide
: proceedings of the Second International Symposium organized by Southern Methodist University and the Institute of Physics and the Physical Society, in co-operation with the Avionics Laboratory of the U.S. Air Force
and International Gallium Arsenide Symposium, 2d, Dallas, 1968 and Dallas. Southern Methodist UniversityAvionics Laboratory, Dayton, Ohio
1969, 244
Congresses | Gallium arsenide
Book
Details down arrow
10. Full Text Barrier-Engineered Arsenide-Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current
by Mohata, D and Rajamohanan, B and Mayer, T and Hudait, M and Fastenau, J and Lubyshev, D and Liu, A. W. K and Datta, S
IEEE electron device letters, ISSN 0741-3106, 11/2012, Volume 33, Issue 11, pp. 1568 - 1570
InGaAs | GaAsSb | tunnel field-effect transistors (TFETs) | Tunneling | Heterojunctions | Indium gallium arsenide | stagger | Transistors | Gallium compounds | FETs | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Electronics | Applied sciences | Exact sciences and technology | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Compound structure devices
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
11. Gallium arsenide
: proceedings of the international symposium organized by the Institute of Physics and the Physical Society
by Stickland, A. C and Institute of Physics and the Physical Society and University of Reading and Avionics Laboratory, Dayton, Ohio
1967, 247
Congresses | Gallium arsenide
Book
Details down arrow
12. Full Text Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h -1 by hydride vapor phase epitaxy
by Metaferia, Wondwosen and Schulte, Kevin L and Simon, John and Johnston, Steve and Ptak, Aaron J
Nature communications, ISSN 2041-1723, 09/2019, Volume 10, Issue 1, pp. 4070 - 1
Solar cells | Gallium | Vapor phase epitaxy | Photovoltaic cells | Gallium arsenide | Vapor phases | Arsenides | Index Medicus
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
13. Gallium arsenide
by Blakemore, J. S and Blakemore, John S and Blakemore, John Sydney and American Institute of Physics
1987, ISBN 0883185253, Volume no. 1., 401
Gallium arsenide semiconductors
Book
Details down arrow
14. Full Text Graphene/gallium arsenide-based Schottky junction solar cells
by Jie, Wenjing and Zheng, Fengang and Hao, Jianhua
Applied physics letters, ISSN 0003-6951, 12/2013, Volume 103, Issue 23, p. 233111
Physical Sciences | Physics | Science & Technology | Physics, Applied | Solar cells | Short circuit currents | Gallium arsenide | Circuits | Semiconductor junctions | Chemical vapor deposition | Substrates | Open circuit voltage | Organic chemistry | Photovoltaic cells | Graphene | Sheets | Energy conversion efficiency | Arsenides | Bilayers | Gallium arsenides | Semiconductors | Voltage
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
15. Full Text Gallium arsenide 55Fe X-ray-photovoltaic battery
by Butera, S and Lioliou, G and Barnett, A. M
Journal of applied physics, ISSN 0021-8979, 02/2016, Volume 119, Issue 6
Thermal properties | Batteries | Research | Gallium compounds | Electric properties | Short circuit currents | Circuits | Gallium arsenide | Temperature effects | Radioisotopes | Photons | Open circuit voltage | Energy conversion efficiency | Arsenides | X ray sources
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights