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2016, 2, Devices, circuits, and systems, ISBN 9781482220032, Volume 47, xvi, 372
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on... 
Electronics | TECHNOLOGY & ENGINEERING / Mechanical | Research | Gallium nitride | Materials | Electronics & communications engineering | Circuits & Devices | Microelectronics | Optics & optoelectronics
Book
2017, 1, ISBN 9789814774093, viii, 297 pages
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example,... 
Power electronics | Equipment and supplies | Materials | Gallium nitride | Materials Science | Optoelectronics | Microelectronics
Book
2017, ISBN 9781351767606
Web Resource
2016, Devices, circuits, and systems, ISBN 9781482220032
Web Resource
2008, 1. Aufl., Springer series in materials science, ISBN 3540718907, Volume 96., xxix, 469
Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material... 
Semiconductors | Gallium nitride | Optical and Electronic Materials | Electronics and Microelectronics, Instrumentation | Applied Optics, Optoelectronics, Optical Devices | Chemistry | Physics and Applied Physics in Engineering
Book
2008, 1. Aufl., ISBN 9780470517529, xiv, 318 p., [6] p. of plates
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applicationspresents the state-of-the-art in knowledge and applications of... 
Porous Materials | Semiconductors | Gallium nitride | Silicon carbide
Book
Advanced Materials, ISSN 0935-9648, 12/2017, Volume 29, Issue 47, p. n/a
In article number 1701838 , Nicholas R. Glavin and co‐workers describe the use of a series of flexible gallium nitride radio‐frequency devices for power... 
flexible RF electronics | flexible GaN | gallium nitride | Radio frequency | Electronics | Devices | Gallium nitrides | Diodes | Wearable technology
Journal Article
Nature Materials, ISSN 1476-1122, 11/2016, Volume 15, Issue 11, pp. 1166 - 1171
The spectrum of two-dimensional (2D) and layered materials 'beyond graphene' offers a remarkable platform to study new phenomena in condensed matter physics.... 
CHEMISTRY, PHYSICAL | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | Encapsulation | Synthesis | Condensed matter physics | Condensed matter | Graphene | Gallium nitrides | Migration | Boron nitride | Layered materials | Epitaxial growth | Atomic structure
Journal Article
1998, Semiconductors and semimetals, ISBN 0127521666, Volume 50, v. 57., 2 v.
Book
2010, Springer series in materials science, ISBN 9783642048289, Volume 133., xxi, 326
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of... 
Crystal growth | Semiconductors | Gallium nitride | Physics | Gallium compounds
Book
by Gil, B
2002, Oxford science publications., ISBN 9780198509745, Volume 9., xv, 467 p., [4] p. of plates
Book
1999, Springer series in materials science, ISBN 354064038X, Volume 32, xxiv, 488
Book
by Gil, B
1998, Series on semiconductor science and technology, ISBN 0198501595, Volume 6., xvi, 170
Book
Proceedings of the IEEE, ISSN 0018-9219, 10/2013, Volume 101, Issue 10, pp. 2211 - 2220
The history of development for gallium-nitride-based light-emitting diodes (LEDs) is reviewed. We identify two broad developments in GaN-based LED technology:... 
Films | light-emitting diodes (LEDs) | Lighting | Light emitting diodes | History | Gallium nitride | Substrates | Power generation | light-emitting diodes (leds) | VAPOR-PHASE EPITAXY | BLUE | MG-DOPED GAN | HIGH-POWER | ENGINEERING, ELECTRICAL & ELECTRONIC | BUFFER LAYER | FILMS | WELL STRUCTURES | GROWTH | INGAN SINGLE | EFFICIENCY
Journal Article
Progress in Quantum Electronics, ISSN 0079-6727, 11/2015, Volume 44, pp. 14 - 68
Journal Article
Physical Chemistry Chemical Physics, ISSN 1463-9076, 7/2014, Volume 16, Issue 3, pp. 1578 - 15783
Wet chemical etching using hot KOH and H 3 PO 4 solutions was performed on semipolar (112&cmb.macr;2) and nonpolar (112&cmb.macr;0) GaN films grown on sapphire... 
Solar cells | Gallium nitrides | Physical chemistry | Control surfaces | Optoelectronic devices | Etching | Orientation | Chemical etching
Journal Article