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Nature Nanotechnology, ISSN 1748-3387, 10/2007, Volume 2, Issue 10, pp. 605 - 615
Journal Article
2017, 1, Industrial Electronics, ISBN 9781439896990, xvi, 249 pages
Field Programmable Gate Arrays (FPGAs) are currently recognized as the most suitable platform for the implementation of complex digital systems targeting an... 
Field programmable gate arrays | Industrial Electronics | Systems & Controls | Microelectronics
Book
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2008, Volume 55, Issue 11, pp. 2827 - 2845
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 03/2019, Volume 29, Issue 11, pp. 1970071 - n/a
In article number 1806030 , Kilwon Cho and co‐workers report a novel heat‐assisted photoacidic oxidation method for effectively hydroxylating a polar surface... 
organic semiconductors | self‐assembled monolayers | surface chemistry | polymer oxidation | polymer gate dielectric | Oxidation-reduction reaction | Polymer industry | Dielectrics | Polymers | Methods | Organic chemistry | Semiconductor devices | Dielectric properties | Electronics | Property damage | Silicon | Oxidation | Transistors
Journal Article
1991, ISBN 0750301090, xii, 337
Book
Nature Materials, ISSN 1476-1122, 2012, Volume 11, Issue 2, pp. 120 - 125
Journal Article
Journal Article
Chemical Society Reviews, ISSN 0306-0012, 1/2017, Volume 46, Issue 1, pp. 4 - 71
Self-assembly is possibly the most effective and versatile strategy for surface functionalization. Self-assembled monolayers (SAMs) can be formed on... 
Self assembly | Self-assembled monolayers | Acoustic microscopes | Electronics | Strategy | Scanning acoustic microscopy | Devices | Tuning
Journal Article
Chemical Society Reviews, ISSN 0306-0012, 01/2017, Volume 46, Issue 1, pp. 40 - 71
Self-assembly is possibly the most effective and versatile strategy for surface functionalization. Self-assembled monolayers (SAMs) can be formed on (semi-)... 
NORMAL-ALKANOIC ACIDS | MOLECULAR ELECTRONICS | CONTROLLING CHARGE INJECTION | GATE DIELECTRICS | LOW-VOLTAGE | METAL WORK FUNCTION | THIN-FILM TRANSISTORS | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | NATIVE-OXIDE SURFACE | ALKANETHIOL MONOLAYERS
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 03/2018, Volume 51, Issue 16, p. 163001
Gallium nitride 9GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based... 
GaN-on-Si | power circuits | GaN | PHYSICS, APPLIED | FIELD | MODE | GATE | BREAKDOWN VOLTAGE | TRANSISTORS | ALGAN/GAN HEMTS | SUBSTRATE | MIS | THRESHOLD VOLTAGE
Journal Article