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Materials Today, ISSN 1369-7021, 01/2008, Volume 11, Issue 1-2, pp. 30 - 38
Journal Article
Journal of the Electrochemical Society, ISSN 0013-4651, 2008, Volume 155, Issue 7, pp. H552 - H561
Germanium possesses higher electron and hole mobilities than silicon. There is a big leap, however, between these basic material parameters and implementation... 
ETCH RATE | ELECTROCHEMISTRY | REMOVAL | QUALITY | INTERFACE | TEMPERATURE | PASSIVATION | DEPOSITION | GE PMOSFETS | WAFER SURFACE | LAYER | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2019, Volume 40, Issue 9, pp. 1362 - 1365
In this letter, we have fabricated Ge-on-insulator (Ge-OI) junctionless (JL) n-MOSFETs via wafer bonding and epitaxial lift-off (ELO) techniques. We have... 
MOSFET | junctionless MOSFETs | Ge MOSFETs | Etching | Fabrication | epitaxial lift-off | wafer bonding | Ge-on-Insulator | MOSFET circuits | Logic gates | Germanium | Silicon | Ge-OI | MOBILITY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 943 - 945
Surface-channel strained-Ge (s-Ge) p-MOSFETs with high- K /metal gate stack and ozone surface passivation are fabricated, for the first time. The channel is... 
mobility | SiGe | strained Ge (s-Ge) | high- K | Capacitance-equivalent thickness (CET) | Logic gates | MOSFET circuits | Silicon | Hafnium compounds | metal gate | ozone | Passivation | high-K | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2018, Volume 65, Issue 6, pp. 2406 - 2412
This paper reports the significance of device architecture to enhance impact ionization (I.I.) resulting in steep increase in the current from OFF- to... 
raised source/drain (RSD) | MOSFET | junctionless (JL) | Switches | Doping | germanium (Ge) | Logic gates | Tunneling | Semiconductor process modeling | Band-to-band tunneling (BTBT) | impact ionization (I.I.) | steep switching | EXTRACTION | PHYSICS, APPLIED | IMPACT IONIZATION | impact ionization (II) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2017, Volume 38, Issue 7, pp. 859 - 862
We study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel length, Lg = 5 nm based on fully ballistic quantum transport simulations. Our... 
Performance evaluation | GaN | Nanowire | Ions | Silicon | Effective mass | Transistors | Ge and InAs | Gallium nitride | Permittivity | TRANSISTORS | FUTURE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IBM Journal of Research and Development, ISSN 0018-8646, 2006, Volume 50, Issue 4-5, pp. 377 - 386
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2015, Volume 62, Issue 7, pp. 2078 - 2083
The gate-stack quality of planar MOSFETs fabricated in Ge-on-Si substrates and passivated by a GeO x interfacial layer is evaluated by low-frequency noise... 
MOSFET | Scattering | Logic gates | Ge MOSFETs | Low-frequency noise | Hafnium compounds | 1/f noise | Aluminum oxide | GATE STACKS | PMOSFETS | PHYSICS, APPLIED | PERFORMANCE | DEVICES | FLICKER NOISE | N-MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Metal oxide semiconductor field effect transistors | Measurement | Acoustic properties | Noise
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2015, Volume 62, Issue 11, pp. 3575 - 3580
Journal Article
IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN 0018-9383, 03/2013, Volume 60, Issue 3, pp. 927 - 934
An ultrathin equivalent oxide thickness (EOT) HfO2/Al2O3/Ge gate stack has been fabricated by combining the plasma postoxidation method with a 0.2-nm-thick... 
Equivalent oxide thickness (EOT) | MOSFET | CMOS | mobility | PHYSICS, APPLIED | metal-oxide-semiconductor (MOS) field-effect transistor | PASSIVATION | GEO2/GE | germanium | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN 0268-1242, 03/2019, Volume 34, Issue 3
In this letter, we report on improved low noise NiGe/n-Ge (100) Schottky barrier diodes (SBDs) fabricated by post annealing of sputtered Ni films on germanium... 
BARRIER INHOMOGENEITIES | PHYSICS, CONDENSED MATTER | NiGe Schottky diode | Schottky contact | 1/f noise of Ge Schottky contact | MATERIALS SCIENCE, MULTIDISCIPLINARY | HEIGHTS | LOW-FREQUENCY NOISE | germanium MOSFET | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2009, Volume 30, Issue 6, pp. 675 - 677
Journal Article
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, ISSN 1555-130X, 08/2018, Volume 13, Issue 8, pp. 1115 - 1122
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2019, Volume 66, Issue 8, pp. 3608 - 3613
To continue with the scaling of high-performance transistors, alternate materials and device architectures are being explored as replacements for contemporary... 
Performance evaluation | nanowire (NW) FET | double-gate (DG) FET FinFET | benchmarking | 2-D materials | monolayer WS | InGaAs | Analytical models | monolayer black phosphorus (BP) | Si | Computer architecture | Logic gates | FinFETs | Silicon | PHYSICS, APPLIED | ELECTRON-MOBILITY | GATE | BAND-STRUCTURE | ENGINEERING, ELECTRICAL & ELECTRONIC | TRANSPORT | monolayer WS2 | GE
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2015, Volume 62, Issue 7, pp. 2078 - 2083
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2014, Volume 61, Issue 5, pp. 1307 - 1315
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2018, Volume 39, Issue 2, pp. 176 - 179
In this letter, we comprehensively study the carriers' mobility and the effect of back-gate bias ( {V} _{\textsf... 
MOSFET | Ge-on-insulator | mobility | MOSFET circuits | Logic gates | Electron mobility | back gate bias | Silicon | accumulation mode | inversion mode | Substrates | SCHEME | PMOSFET | PROGRESS | BODY | ENGINEERING, ELECTRICAL & ELECTRONIC | Current carriers | Bias | Hole mobility | Carrier mobility | Carrier density | MOSFETs
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2009, Volume 56, Issue 11, pp. 2644 - 2651
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 11/2016, Volume 55, Issue 11, p. 114001
In this work, a nanowire p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) coaxially having a Si core and a Ge peripheral channel is designed... 
HIGH-PERFORMANCE | STRAINED SI | DRIFT VELOCITY | CMOS | ELECTRON | PHYSICS, APPLIED | ROOM-TEMPERATURE ELECTROLUMINESCENCE | GE-CONDENSATION TECHNIQUE | ON-INSULATOR | FABRICATION
Journal Article
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