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Progress in crystal growth and characterization of materials, ISSN 0960-8974, 2008, Volume 54, Issue 3, pp. 138 - 173
Seed particle alloys | Gold particles | Nanowire growth | Group III–V nanowires | Metal–organic vapour phase epitaxy | Particle-assisted nanowire growth | VLS model | Group III-V nanowires | Metal-organic vapour phase epitaxy | Physical Sciences | Materials Science | Materials Science, Characterization & Testing | Technology | Crystallography | Science & Technology | Quantum wires | Catalytic methods | Exact sciences and technology | Methods of nanofabrication | Materials science | Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation | Nanoscale materials and structures: fabrication and characterization | Other topics in nanoscale materials and structures | Methods of crystal growth; physics of crystal growth | Physics | Cross-disciplinary physics: materials science; rheology | Rain and rainfall | Analysis | Epitaxy | Nanotechnology | Alloys | Condensed Matter Physics | alloys | Fysik | Seed particle | Naturvetenskap | Metal-organic | Den kondenserade materiens fysik | vapour phase epitaxy | Natural Sciences
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Progress in materials science, ISSN 0079-6425, 08/2015, Volume 73, pp. 44 - 126
Oxides and hydroxides | TMD layers | Materials beyond grapheme | 2D layers importance/uniqueness | Group IV and III-V elements | Kaolinite | h-BN | Silicene and germanene | Materials Science | Technology | Materials Science, Multidisciplinary | Science & Technology | Graphene | Graphite | Chemical properties | Electrodes | Electronics | Materials science | Optoelectronic devices | Nanostructure | Two dimensional | Devices
Journal Article
Journal of applied physics, ISSN 0021-8979, 02/2018, Volume 123, Issue 6
Physical Sciences | Physics | Science & Technology | Physics, Applied | Band structure | Parameters | Band structure of solids | Semiconductors | Intermetallic compounds | Gallium arsenide | Gallium nitrides | Density functional theory | Band gap | Elastic properties | Group III-V semiconductors | Physics - Materials Science
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 4/2017, Volume 56, Issue 5S1, pp. 05DA06 - 05DA06
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Nanotechnology, ISSN 0957-4484, 03/2019, Volume 30, Issue 23, pp. 234002 - 234002
density functional calculations | twin plane superlattice | surface energy | group III-V nanowire | twinning energy | Physical Sciences | Materials Science | Nanoscience & Nanotechnology | Technology | Materials Science, Multidisciplinary | Science & Technology - Other Topics | Physics | Science & Technology | Physics, Applied
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Journal of applied physics, ISSN 0021-8979, 09/2016, Volume 120, Issue 12, p. 124309
Physical Sciences | Physics | Science & Technology | Physics, Applied | Parameters | Semiconductors | Hole density | Conductivity | Relaxation time | Helicity | Weight | Time dependence | Impurities | Mathematical analysis | Electrical resistivity | Energy conservation | Spin-orbit interactions | Group III-V semiconductors | Electron gas | Physics - Mesoscale and Nanoscale Physics
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