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1999, 2nd ed., ISBN 9780126738421, 563
This book describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how... 
Compound semiconductors | Crystal growth | Vapor-plating | Epitaxy | Electronics & communications engineering
eBook
NANO LETTERS, ISSN 1530-6984, 02/2013, Volume 13, Issue 2, pp. 668 - 673
Two-dimensional materials such as graphene show great potential for future nanoscale electronic devices. The high surface-to-volume ratio is a natural asset... 
LARGE-AREA | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MoS2 | MATERIALS SCIENCE, MULTIDISCIPLINARY | GRAPHENE | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | Chemical sensor | CHEMISTRY, MULTIDISCIPLINARY | CARBON NANOTUBES | TRANSISTORS | PHOTOTRANSISTORS | vapor sensing | GROWTH | GAP | molybdenum disulfide | two-dimensional materials
Journal Article
ACS Nano, ISSN 1936-0851, 03/2013, Volume 7, Issue 3, pp. 2768 - 2772
Monolayers of transition metal dichalcogenides (TMDCs) are atomically thin direct-gap semiconductors with potential applications in nanoelectronics,... 
molybdenum disulfide | valleytronics | monolayer | valley polarization | photoluminescence | vapor-solid growth | EXFOLIATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | GRAPHENE | CHEMISTRY, PHYSICAL | SINGLE-LAYER MOS2 | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | ATOMIC LAYERS
Journal Article
Advanced Materials, ISSN 0935-9648, 11/2015, Volume 27, Issue 42, pp. 6722 - 6727
Journal Article
Nature communications, ISSN 2041-1723, 07/2019, Volume 10, Issue 1, pp. 3361 - 8
We report gallium arsenide (GaAs) growth rates exceeding 300 µm h using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium... 
Solar cells | Growth conditions | Gallium | Growth rate | Intermetallic compounds | Gallium arsenide | Circuits | Epitaxy | Vapor phases | Gallium indium phosphide | Vapors | Hydrides | Indium | Vapor phase epitaxy | Photovoltaic cells | Efficiency | Kinetics | Epitaxial growth | Deposition | Arsenides | MATERIALS SCIENCE | solar cells | SOLAR ENERGY | electronic devices
Journal Article
ChemPhysChem, ISSN 1439-4235, 08/2016, Volume 17, Issue 15, pp. 2382 - 2388
There have been recent reports on the formation of single‐halide perovskites, CH3NH3PbX3 (X=Cl, Br, I), by means of vapor‐assisted solution processing. Herein,... 
solar cells | vapor-assisted solution deposition | electrochemistry | perovskite phases | thin films | Solar cells | Thin films | Electrochemistry | Perovskite phases | Vapor-assisted solution deposition | UNIFORM | SIZE | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | CHEMISTRY, PHYSICAL | TRANSPORT | HYSTERESIS | GROWTH | THIN-FILM | EFFICIENT | Electrochemical reactions | Perovskite | Dielectric films
Journal Article
15.