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The Plant Cell, ISSN 1040-4651, 6/2007, Volume 19, Issue 6, pp. 1912 - 1929
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 07/2016, Volume 824, pp. 428 - 431
Si detectors, in various configurations (strips and pixels), have been playing a key role in High Energy Physics (HEP) experiments due to their excellent... 
Breakdown voltage | Guard-ring | Leakage current | Si micro strip detectors | Silicon | Particle accelerators | Collisions (Nuclear physics) | Detectors | Electric properties
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2019, Volume 66, Issue 4, pp. 1648 - 1655
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2014, Volume 61, Issue 12, pp. 4145 - 4152
Journal Article
IEEE Transactions on Components, Packaging and Manufacturing Technology, ISSN 2156-3950, 02/2011, Volume 1, Issue 2, pp. 220 - 233
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 07/2016, Volume 160, pp. 54 - 62
The breakdown voltage is an important parameter in designing X-ray detectors such as silicon drift detectors (SDDs). In SDDs the complete thickness of the... 
Breakdown voltage | Avalanche breakdown | X-ray detector | Silicon drift detector | Boron layer | Multi-guard ring | PHYSICS, APPLIED | SILICON | NANOSCIENCE & NANOTECHNOLOGY | LAYERS | ENGINEERING, ELECTRICAL & ELECTRONIC | DEVICES | OPTICS | Detectors | Electric potential | Depletion | Ring structures | Voltage | Breakdown | Oxides | Leakage current
Journal Article
Journal Article
IEEE Sensors Journal, ISSN 1530-437X, 06/2019, Volume 19, Issue 12, pp. 4688 - 4695
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2016, Volume 63, Issue 6, pp. 2449 - 2454
Journal Article
Plant Physiology, ISSN 0032-0889, 5/2009, Volume 150, Issue 1, pp. 463 - 481
Journal Article
IEEE Transactions on Electromagnetic Compatibility, ISSN 0018-9375, 04/2017, Volume 59, Issue 2, pp. 481 - 487
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2012, Volume 33, Issue 1, pp. 80 - 82
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2015, Volume 36, Issue 3, pp. 268 - 270
We characterize quantitatively a guard ring of a through-silicon via (TSV) which is used to reduce the coupling noise from the TSV by utilizing an inversion... 
keep-out zone | Fluctuations | guard ring | Noise | displacement current | MOS devices | Couplings | inversion layer shielding | TSV | coupling noise | Capacitance | Silicon | Through-silicon via | Through-silicon vias | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2013, Volume 60, Issue 9, pp. 2854 - 2861
This paper presents a compact model for P + guard rings in lightly doped CMOS substrates featuring a P-well layer. Simple expressions for the impedances in the... 
guard ring | Noise | Conductivity | Substrates | Resistance | Semiconductor device modeling | Layout | substrate noise | {\rm P}^{+} contact | Compact model | mixed-signal IC | Integrated circuit modeling | P-well | Measurement | Usage | Embedded systems | Voltage | Design and construction | Electromagnetic fields | Complementary metal oxide semiconductors
Journal Article
physica status solidi (a), ISSN 1862-6300, 01/2016, Volume 213, Issue 1, pp. 193 - 202
In this work, field plate and guard ring edge‐terminated Ni/4H‐nSiC Schottky barrier diodes (SBD) were fabricated using standard photolithography process.... 
capacitance spectroscopy | capacitance roll‐off | SiC | Schottky barriers | series resistance | interface states | capacitance roll-off | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | DENSITY | ELECTRICAL CHARACTERISTICS | VOLTAGE CHARACTERISTICS | LAYER | Circuit components | Guards
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2010, Volume 31, Issue 1, pp. 41 - 43
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 2013, Volume 60, Issue 9, pp. 2854 - 2861
This paper presents a compact model for P+ guard rings in lightly doped CMOS substrates featuring a P-well layer. Simple expressions for the impedances in the... 
substrate noise | guard ring | Compact model | mixed-signal IC | P-well | contact | PHYSICS, APPLIED | P+ contact | NOISE | BAND | SUPPRESSION | CONTACT RESISTANCE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article