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2013, European expansion & global interaction, ISBN 9780857459336, Volume 9, x, 328
Book
IEEE transactions on electron devices, ISSN 1557-9646, 2019, Volume 66, Issue 5, pp. 2125 - 2131
In this paper, we report a new scalable model for the thermal impedance of III-V DHBTs that has been developed based on the physics of heat diffusion within... 
pulse measurement | self-heating | III–V HBTs | Compact model | low-frequency S-parameters | thermal impedance | PHYSICS, APPLIED | Compactmodel | III-V HBTs | ENGINEERING, ELECTRICAL & ELECTRONIC | Mathematical models | Parameters | Emitters | Impedance | Substrates | Engineering Sciences | Micro and nanotechnologies | Microelectronics
Journal Article
by Aamodt, K and Adamová, D and Aglieri Rinella, G and Aguilar Salazar, S and Ahmad, N and Ahmad Masoodi, A and Ahn, S.U and Alkin, A and Alt, T and Altsybeev, I and Anson, C and Antičić, T and Antinori, F and Antonioli, P and Aphecetche, L and Appelshäuser, H and Arnaldi, R and Arsene, I.C and Asryan, A and Augustinus, A and Averbeck, R and Awes, T.C and Äystö, J and Baek, Y.W and Bailhache, R and Bala, R and Baldini Ferroli, R and Baldisseri, A and Bán, J and Barile, F and Barnaföldi, G.G and Barnby, L.S and Barret, V and Basile, M and Bastid, N and Batyunya, B and Baumann, C and Belikov, I and Bellini, F and Beole, S and Bercuci, A and Berdnikov, Y and Betev, L and Bhasin, A and Bhati, A.K and Bielčík;ová, J and Blanco, F and Blanco, F and Blume, C and Bock, N and Bogdanov, A and Bogolyubsky, M and Boldizsár, L and Bombara, M and Borel, H and Bortolin, C and Bose, S and Botje, M and Böttger, S and Boyer, B and Bravina, L and Bruna, E and Bruno, G.E and Buesching, H and Busch, O and Buthelezi, Z and Caffarri, D and Canoa Roman, V and Carena, W and Carminati, F and Castillo Castellanos, J and Catanescu, V and Cavicchioli, C and Chattopadhyay, S and Chattopadhyay, S and Cherney, M and Cheshkov, C and Cleymans, J and Coli, S and Conesa Balbastre, G and Contreras, J.G and Corrales Morales, Y and Cortés Maldonado, I and Cortese, P and Costa, F and Crescio, E and Dainese, A and Dalsgaard, H.H and Danu, A and Das, D and Dash, A and Dash, S and De, S and De Azevedo Moregula, A and De Caro, A and De Gruttola, D and De Marco, N and De Pasquale, S and De Remigis, R and Dellacasa, G and ...
Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics, ISSN 0370-2693, 02/2011, Volume 696, Issue 4, pp. 328 - 337
The first measurement of two-pion Bose-Einstein correlations in central Pb-Pb collisions at √s =2.76 TeV at the Large Hadron Collider is presented. We observe... 
Intensity interferometry | Femtoscopy | HBT | Heavy-ion collisions | LHC | Collisions (Nuclear physics)
Journal Article
Nuclear Physics, Section A, ISSN 0375-9474, 11/2017, Volume 967, pp. 365 - 368
Bose-Einstein correlations between identified charged pions are measured for p+Pb collisions at sNN=5.02 TeV with the ATLAS detector using a total integrated... 
flow in small systems | Femtoscopy | HBT
Journal Article
Wuli Xuebao/Acta Physica Sinica, ISSN 1000-3290, 05/2014, Volume 63, Issue 11
Journal Article
IEEE Transactions on Terahertz Science and Technology, ISSN 2156-342X, 09/2011, Volume 1, Issue 1, pp. 9 - 24
We present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have... 
Cryogenic electronics | submillimeter-wave | mHEMTs | THz | Logic gates | HBTs | HEMTs | MMICs | Heterojunction bipolar transistors | low-noise amplifiers | Indium phosphide | Substrates | PHYSICS, APPLIED | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Solid State Electronics, ISSN 0038-1101, 12/2018, Volume 150, pp. 45 - 50
•No simplifying assumptions or test structures are required.•The three scalable HBT devices with same pad structures are employed to determine base parasitic... 
Small signal model | HBT | Scalable model | Equivalent circuits | Parameter extraction | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | HETEROJUNCTION BIPOLAR-TRANSISTORS | PARAMETER-EXTRACTION | DIRECT EXTRACTION | INP/INGAAS HBTS | ENGINEERING, ELECTRICAL & ELECTRONIC | Gallium arsenide | Analysis | Methods
Journal Article
Solid-state electronics, ISSN 0038-1101, 2005, Volume 49, Issue 12, pp. 1875 - 1895
Journal Article
Physical review. C, Nuclear physics, ISSN 0556-2813, 02/2013, Volume 87, Issue 2
A simultaneous description of hadronic yields; pion, kaon, and proton spectra; elliptic flows; and femtoscopy scales in the hydrokinetic model of A + A... 
PHYSICS, NUCLEAR | HBT | FLOW
Journal Article
Microelectronics and reliability, ISSN 0026-2714, 2019, Volume 95, pp. 28 - 35
This paper presents an investigation into the impact of substrate contact structure on the heavy ion-induced current transient in silicon‑germanium... 
Single event transient | Substrate contact structure | TCAD simulation | Silicon‑germanium HBT | COLLECTION | MICROBEAM | PHYSICS, APPLIED | Silicon-germanium HBT | NANOSCIENCE & NANOTECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Nuclear Physics, Section A, ISSN 0375-9474, 11/2017, Volume 967, pp. 808 - 811
We present results from STAR's first dedicated fixed-target run conducted in 2015 with Au + Au collisions at sNN=4.5GeV. Directed flow of protons and lambdas,... 
spectra | strangeness | STAR | fixed-target | dynamical fluctuations | HBT | rapidity density | flow
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 04/2015, Volume 63, Issue 4, pp. 1334 - 1341
Journal Article
IEICE Electronics Express, ISSN 1349-2543, 2017, Volume 14, Issue 15, p. 20170576
A differential PA (power amplifier) with a novel structure is introduced in this paper. This PA is constructed with single ended input and balanced output. It... 
Differential | Power amplifier | InGaP/GaAs HBT | Push-pull | P-N | power amplifier | push-pull | HBTS | differential | ENGINEERING, ELECTRICAL & ELECTRONIC | Power efficiency | Energy dissipation | Power amplifiers | Bandwidth
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 10/2011, Volume 46, Issue 10, pp. 2203 - 2214
We report on the development of a 0.25-μm InP HBT IC technology for lower end of the THz frequency band (0.3-3 THz). Transistors demonstrate an extrapolated f... 
MMIC oscillators | TMICs | terahertz | Bandwidth | InP HBT | millimeter-wave oscillators | voltage-controlled oscillators | Heterojunction bipolar transistors | Integrated circuit modeling | Oscillators | Indium phosphide | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article