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Applied Physics Letters, ISSN 0003-6951, 05/2009, Volume 94, Issue 19, pp. 191107 - 191107-3
We show that a significant enhancement of the direct band gap photoluminescence can be achieved at room temperature in bulk Ge and Ge-on-insulator heavily n... 
elemental semiconductors | impurity distribution | PHYSICS, APPLIED | photoluminescence | heavily doped semiconductors | SILICON | spontaneous emission | ON-INSULATOR | germanium | GILD | phosphorus
Journal Article
Journal of the Korean Physical Society, ISSN 0374-4884, 12/2015, Volume 67, Issue 12, pp. 2112 - 2114
The model of GaAs1−y N y (y = 0.001) as a heavily-doped semiconductor in the ultra-dilute region is attentively examined. The model enables GaAsN to be viewed... 
Density of states | Theoretical, Mathematical and Computational Physics | Dilute nitrides | Path integration | Physics, general | Heavily-doped semiconductor | Physics | Particle and Nuclear Physics | PHYSICS, MULTIDISCIPLINARY | IMPURITY-BAND | ABSORPTION | DENSITY-OF-STATES | ELECTRONIC-STRUCTURE
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 2010, Volume 405, Issue 3, pp. 817 - 821
Journal Article
Journal of the Physical Society of Japan, ISSN 0031-9015, 2009, Volume 78, Issue 3, pp. 034715 - 034715
Journal Article
The Journal of Physical Chemistry Letters, ISSN 1948-7185, 01/2016, Volume 7, Issue 2, pp. 295 - 301
Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid... 
RECOMBINATION | SINGLE-CRYSTALS | INVERSE TEMPERATURE CRYSTALLIZATION | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | CHEMISTRY, PHYSICAL | DEVICES | NANOSCIENCE & NANOTECHNOLOGY | HALIDE PEROVSKITES | EFFICIENCY | HEAVILY-DOPED SEMICONDUCTORS
Journal Article
The Journal of Physical Chemistry Letters, ISSN 1948-7185, 10/2017, Volume 8, Issue 19, pp. 4943 - 4953
Heterovalent doping in colloidal semiconductor nanocrystals (CSNCs), with provisions of extra electrons (n-type doping) or extra holes (p-type doping), could... 
ZNSE NANOCRYSTALS | THIN-FILMS | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | OPTICAL-PROPERTIES | CADMIUM IONS | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CORE/SHELL NANOCRYSTALS | CDSE NANOCRYSTALS | LOCAL-STRUCTURE | HEAVILY-DOPED SEMICONDUCTORS | QUANTUM DOTS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2013, Volume 102, Issue 16, p. 162101
We used the solutions from the variational path integral to suggest a function form of the bandtail states of a two-dimensional system. The analytic solutions... 
PHYSICS, APPLIED | EFFECTIVE-MASS | POLAR CRYSTAL | GAS | SLOW ELECTRONS | DENSITY-OF-STATES | HEAVILY-DOPED SEMICONDUCTORS
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 11/2009, Volume 80, Issue 19
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 01/2009, Volume 79, Issue 4
We present the imaginary part of the dielectric function of n-type wurtzite GaN measured by spectroscopic ellipsometry in the spectral range of 3.2-4.5 eV at... 
phonon-exciton interactions | THIN-FILMS | gallium compounds | PHYSICS, CONDENSED MATTER | PHOTOLUMINESCENCE | heavily doped semiconductors | dielectric function | carrier density | SCHOTTKY DIODES | GAAS | metal-insulator transition | DEPENDENCE | DENSITY | ABSORPTION-COEFFICIENT | wide band gap semiconductors | SPECTRA | III-V semiconductors | DEGENERATE SEMICONDUCTORS
Journal Article
Journal of the Electrochemical Society, ISSN 0013-4651, 2011, Volume 158, Issue 10, pp. H961 - H964
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2011, Volume 99, Issue 16, pp. 162106 - 162106-3
We have investigated the temperature and bias dependence of the Hanle effect in a composite n- type Ge system consisting of a heavily doped surface layer and a... 
iron alloys | PHYSICS, APPLIED | heavily doped semiconductors | spin polarised transport | SILICON | germanium | SPIN-INJECTION | elemental semiconductors | TRANSPORT | Hanle effect | contact resistance | magnesium compounds | cobalt alloys | composite materials
Journal Article