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IEEE Electron Device Letters, ISSN 0741-3106, 12/2015, Volume 36, Issue 12, pp. 1287 - 1290
A low on-resistance normally-off GaN double-channel metal-oxide-semiconductor high-electronmobility transistor (DC-MOS-HEMT) is proposed and demonstrated in... 
gate recess | normally-off | Logic gates | HEMTs | field-effect mobility | Wide band gap semiconductors | Gallium nitride | Double-channel MOS-HEMT (DC-MOSHEMT) | Aluminum gallium nitride | Aluminum nitride | MOS devices | ALGAN/GAN HEMTS | INTERFACE | MIS-HEMTS | GATE | Double-channel MOS-HEMT (DC-MOS-HEMT) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2018, Volume 112, Issue 12, p. 122102
We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a... 
POWER | PHYSICS, APPLIED | DIODES | HEMT
Journal Article
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2010, Volume 31, Issue 3, pp. 189 - 191
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 988 - 990
We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency ( fT ) of 370 GHz. The... 
molecular beam epitaxy (MBE) | cutoff frequency | f_{T} | AlN | InAlN | MODFETs | Gallium nitride | Delay | high-electron-mobility transistor (HEMT) | regrown ohmic contacts | GaN | HEMTs | Logic gates | Ohmic contacts | transistor | INALN/GAN HEMTS | f(T) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, 09/2016, Volume 4, Issue 3, pp. 707 - 719
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 11/2019, Volume 103, p. 104624
In this paper, Al Ga N/GaN/Al Ga N Double Heterostructure-High Electron Mobility Transistor targeting a low loss and high power efficient boost converter... 
Boost converter circuits | Enhancement mode | Off-state breakdown voltage VBR.OFF | Single-heterostructure (SH-HEMT) | Normally-off | Double-heterostructure HEMT(DH-HEMT) | High-electron mobility transistors (HEMTs)
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 06/2016, Volume 26, Issue 6, pp. 449 - 451
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10, p. 103506
Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n(-)-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped... 
ALGAN/GAN HEMTS | VOLTAGE | PHYSICS, APPLIED
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2019, Volume 40, Issue 7, pp. 1056 - 1059
We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template... 
Performance evaluation | large-signal | radio frequency | small-signal | HEMT | ScAlN | Gallium nitride | MODFETs | Current measurement | GaN | Logic gates | HEMTs | Transconductance | INALN/ALN/GAN HEMTS | ALGAN/GAN HEMTS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2015, Volume 62, Issue 6, pp. 2417 - 2422
The effects of proton-induced displacement damage in GaN HEMTs on circuit-level RF power amplifier parameters such as circuit gain, stability, and RF output... 
Protons | Radio frequency | Radiation effects | HEMT | S-parameters | HEMTs | Power semiconductor devices | Gallium nitride | proton | power semiconductor devices | radiation effects | DEFECTS | PERFORMANCE | ELECTRON-MOBILITY TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | ALGAN/GAN HEMTS | NUCLEAR SCIENCE & TECHNOLOGY | DEGRADATION | DEVICES | GAN HEMTS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2019, Volume 66, Issue 9, pp. 3777 - 3783
Journal Article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 12/2005, Volume 44, Issue 12, pp. 8263 - 8268
The development of the high electron mobility transistor (HEMT) provides a good illustration of the way a new device emerges and evolves toward... 
InP-based HEMT | High electron mobility transistor (HEMT) | HEMT IC | E-HEMT | GaN-based HEMT | D-HEMT | GaAs-based HEMT | Inverted HEMT | Modulation-doped superlattice | Radio telescope | HETEROJUNCTION | MESFET | PHYSICS, APPLIED | modulation-doped superlattice | inverted HEMT | high electron mobility transistor (HEMT) | radio telescope | TECHNOLOGY
Journal Article
physica status solidi (a), ISSN 1862-6300, 10/2017, Volume 214, Issue 10, p. n/a
Journal Article
by Huang, S and Liu, XY and Wei, K and Liu, GG and Wang, XH and Sun, B and Yang, XL and Shen, B and Liu, C and Liu, SH and Hua, MY and Yang, S and Chen, KJ
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 01/2015, Volume 106, Issue 3
High quality Al2O3 film grown by atomic layer deposition (ALD), with ozone (O3) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN... 
PHYSICS, APPLIED | MIS-HEMT | OZONE | BREAKDOWN
Journal Article
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