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1. Full Text 1-kV vertical Ga2O3 field-plated Schottky barrier diodes
by Konishi, Keita and Goto, Ken and Murakami, Hisashi and Kumagai, Yoshinao and Kuramata, Akito and Yamakoshi, Shigenobu and Higashiwaki, Masataka
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10, p. 103506
Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n(-)-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped... 
ALGAN/GAN HEMTS | VOLTAGE | PHYSICS, APPLIED
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2. Full Text Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor
by Jin Wei and Shenghou Liu and Baikui Li and Xi Tang and Yunyou Lu and Cheng Liu and Mengyuan Hua and Zhaofu Zhang and Gaofei Tang and Chen, Kevin J
IEEE Electron Device Letters, ISSN 0741-3106, 12/2015, Volume 36, Issue 12, pp. 1287 - 1290
A low on-resistance normally-off GaN double-channel metal-oxide-semiconductor high-electronmobility transistor (DC-MOS-HEMT) is proposed and demonstrated in... 
gate recess | normally-off | Logic gates | HEMTs | field-effect mobility | Wide band gap semiconductors | Gallium nitride | Double-channel MOS-HEMT (DC-MOSHEMT) | Aluminum gallium nitride | Aluminum nitride | MOS devices | ALGAN/GAN HEMTS | INTERFACE | Double-channel MOS-HEMT (DC-MOS-HEMT) | ENGINEERING, ELECTRICAL & ELECTRONIC
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3. Full Text InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f of 370 GHz
by Yuanzheng Yue and Zongyang Hu and Jia Guo and Sensale-Rodriguez, B and Guowang Li and Ronghua Wang and Faria, F and Tian Fang and Bo Song and Xiang Gao and Shiping Guo and Kosel, T and Snider, G and Fay, P and Jena, D and Huili Xing
IEEE Electron Device Letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 988 - 990
We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency ( fT ) of 370 GHz. The... 
molecular beam epitaxy (MBE) | cutoff frequency | f_{T} | AlN | InAlN | MODFETs | Gallium nitride | Delay | high-electron-mobility transistor (HEMT) | regrown ohmic contacts | GaN | HEMTs | Logic gates | Ohmic contacts | transistor | INALN/GAN HEMTS | f(T) | ENGINEERING, ELECTRICAL & ELECTRONIC
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4. Full Text Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons
by Meneghini, Matteo and Stocco, Antonio and Silvestri, Riccardo and Meneghesso, Gaudenzio and Zanoni, Enrico
Applied Physics Letters, ISSN 0003-6951, 06/2012, Volume 100, Issue 23, pp. 233508 - 233508-3
This paper reports on an extensive analysis of the degradation of AlGaN/GaN high electron mobility transistors (HEMTs) submitted to on-state and off-state... 
HEMTS | PHYSICS, APPLIED | RELIABILITY
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5. Full Text Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400GHz
by Yue, Yuanzheng and Hu, Zongyang and Guo, Jia and Sensale-Rodriguez, Berardi and Li, Guowang and Wang, Ronghua and Faria, Faiza and Song, Bo and Gao, Xiang and Guo, Shiping and Kosel, Thomas and Snider, Gregory and Fay, Patrick and Jena, Debdeep and Grace, Huili
Japanese Journal of Applied Physics, ISSN 0021-4922, 08/2013, Volume 52, Issue 8
We report on 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (f(T)) of 400 GHz.... 
HEMTS | GHZ | PHYSICS, APPLIED
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6. Full Text Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing
by Pavlidis, Georges and Kendig, Dustin and Heller, Eric R and Graham, Samuel
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2018, Volume 65, Issue 5, pp. 1753 - 1758
The development of steady-state thermal characterization techniques for AlGaN/GaN high-electron mobility transistors (HEMTs) has been used to measure the... 
thermoreflectance | thermal characterization | Light emitting diodes | AlGaN/GaN high-electron mobility transistors (HEMTs) | Gallium nitride | MODFETs | Temperature measurement | thermal resistance | transient | Logic gates | HEMTs | temperature | self-heating | gate resistance thermometry (GRT) | Transient analysis | AlGaN/GaN high-electronmobility transistors (HEMTs) | PHYSICS, APPLIED | self-heating transient | CHANNEL TEMPERATURE | GAN HEMTS | ENGINEERING, ELECTRICAL & ELECTRONIC
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7. Full Text ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance
by Green, Andrew J and Gillespie, James K and Fitch, Robert C and Walker, Dennis E and Lindquist, Miles and Crespo, Antonio and Brooks, Dan and Beam, Edward and Xie, Andy and Kumar, Vipan and Jimenez, Jose and Lee, Cathy and Cao, Yu and Chabak, Kelson D and Jessen, Gregg H
IEEE Electron Device Letters, ISSN 0741-3106, 07/2019, Volume 40, Issue 7, pp. 1056 - 1059
We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template... 
Performance evaluation | large-signal | radio frequency | small-signal | HEMT | ScAlN | Gallium nitride | MODFETs | Current measurement | GaN | Logic gates | HEMTs | Transconductance | INALN/ALN/GAN HEMTS | ALGAN/GAN HEMTS | ENGINEERING, ELECTRICAL & ELECTRONIC
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8. Full Text Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications
by Ives, Nathan E and Jin Chen and Witulski, Arthur F and Schrimpf, Ronald D and Fleetwood, Daniel M and Bruce, Ralph W and McCurdy, Michael W and En Xia Zhang and Massengill, Lloyd W
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2015, Volume 62, Issue 6, pp. 2417 - 2422
The effects of proton-induced displacement damage in GaN HEMTs on circuit-level RF power amplifier parameters such as circuit gain, stability, and RF output... 
Protons | Radio frequency | Radiation effects | HEMT | S-parameters | HEMTs | Power semiconductor devices | Gallium nitride | proton | power semiconductor devices | radiation effects | DEFECTS | PERFORMANCE | ELECTRON-MOBILITY TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | ALGAN/GAN HEMTS | NUCLEAR SCIENCE & TECHNOLOGY | DEGRADATION | DEVICES | GAN HEMTS
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9. Full Text Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics
by Kanamura, M and Ohki, T and Kikkawa, T and Imanishi, K and Imada, T and Yamada, A and Hara, N
IEEE Electron Device Letters, ISSN 0741-3106, 03/2010, Volume 31, Issue 3, pp. 189 - 191
This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an... 
Base stations | Dielectric substrates | Surface morphology | Gallium nitride | MODFETs | enhancement mode | Piezoelectric effect | GaN | HEMTs | MOSFET circuits | ALD | MIS high-electron-mobility transistor (MIS-HEMT) | Aluminum gallium nitride | Dielectric devices | TRANSISTOR | VOLTAGE | ALGAN/GAN HEMTS | OPERATION | RESISTANCE | POWER ELECTRONICS APPLICATIONS | ENGINEERING, ELECTRICAL & ELECTRONIC | Semiconductor devices | Gallium nitrides | Drains | Management information systems | Dielectrics | Devices | Transistors | Gates
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10. Full Text A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
by Jungwoo Joh and del Alamo, J A
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2011, Volume 58, Issue 1, pp. 132 - 140
Trapping is one of the most deleterious effects that limit performance and reliability in GaN HEMTs. In this paper, we present a methodology to study trapping... 
Temperature measurement | Current measurement | GaN | transient | Charge carrier processes | HEMTs | high-electron mobility transistors (HEMTs) | trapping | Transient analysis | MODFETs | Gallium nitride | measurement | VOLTAGE | PHYSICS, APPLIED | PASSIVATION | THERMAL-CONDUCTIVITY | HFET | CURRENT COLLAPSE | ENGINEERING, ELECTRICAL & ELECTRONIC | IMPACT | ALGAN/GAN HEMTS | DEGRADATION | Thermal properties | Measurement | Usage | Stress-strain curves | Electron mobility | Surface roughness | Gallium compounds | Methods | Electric properties | Dynamic tests | Trapping | Methodology | Semiconductor devices | Gallium nitrides | Uniqueness | High electron mobility transistors | Buffers
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11. Full Text Current gain above 10 in sub-10nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter
by Yang, ZC and Zhang, YW and Krishnamoorthy, S and Nath, DN and Khurgin, JB and Rajan, S
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 05/2016, Volume 108, Issue 19
We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40... 
PHYSICS, APPLIED | OPERATION | HEMTS
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12. Full Text Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
by Liu, Shenghou and Yang, Shu and Tang, Zhikai and Jiang, Qimeng and Liu, Cheng and Wang, Maojun and Shen, Bo and Chen, Kevin J
Applied Physics Letters, ISSN 0003-6951, 02/2015, Volume 106, Issue 5, p. 51605
We report the interface characterization of Al2O3/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like... 
AL2O3/GAN MOSFET | PHYSICS, APPLIED | INSTABILITY | ALGAN/GAN HEMTS | PASSIVATION | PERFORMANCE | MIS-HEMTS
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13. Full Text Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
by Sasikumar, A and Arehart, A.R and Martin-Horcajo, S and Romero, M.F and Pei, Y and Brown, D and Recht, F and Di Forte-Poisson, M.A and Calle, F and Tadjer, M.J and Keller, S and Denbaars, S.P and Mishra, U.K and Ringel, S.A
Applied Physics Letters, ISSN 0003-6951, 07/2013, Volume 103, Issue 3, p. 33509
Traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are identified and compared using constant drain-current deep level transient... 
HEMTS | DEFECTS | PHYSICS, APPLIED | PERFORMANCE
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14. Full Text High-Quality Interface in Al 2 O 3 /GaN/GaN/AlGaN/GaN MIS Structures with in Situ Pre-Gate Plasma Nitridation
by Yang, Shu and Tang, Zhikai and Wong, King-Yuen and Lin, Yu-Syuan and Liu, Cheng and Lu, Yunyou and Huang, Sen and Chen, Kevin J
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 12, pp. 1497 - 1499
MIS-HEMTs | gate stack | III-nitride | hysteresis
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15. Full Text Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
by Leone, Stefano and Benkhelifa, Fouad and Kirste, Lutz and Manz, Christian and Quay, Ruediger and Ambacher, Oliver
Journal of Applied Physics, ISSN 0021-8979, 06/2019, Volume 125, Issue 23, p. 235701
The excellent characteristics of high electron mobility transistors based on AlGaN/GaN heterostructures rely on the properties of the substrate used for their... 
HEMTS | PHYSICS, APPLIED | FILM | STRAIN
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16. Full Text AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance
by Zimmermann, T and Deen, D and Yu Cao and Simon, J and Fay, P and Jena, D and Xing, H.G
IEEE Electron Device Letters, ISSN 0741-3106, 07/2008, Volume 29, Issue 7, pp. 661 - 664
High-electron mobility transistors (HEMTs) based on ultrathin AIN/GaN heterostructures with a 3.5-nm AlN barrier and a 3-nm Al 2 O 3 gate dielectric have been... 
Dielectrics and electrical insulation | AlN | insulated gate | Gallium nitride | MODFETs | GaN | Dielectric measurements | HEMTs | Heterojunctions | high-electron mobility transistors (HEMTs) | Ohmic contacts | Current density | Transconductance | Aluminum gallium nitride | Insulated gate | High-electron mobility transistors (HEMTs) | TRANSISTORS | VOLTAGE | ALGAN/GAN HEMTS | TEMPERATURE | AIN/GAN HEMTS | OHMIC CONTACTS | ENGINEERING, ELECTRICAL & ELECTRONIC | Semiconductor devices | Gallium nitrides | High electron mobility transistors | Dielectrics | Density | Gates | Aluminum nitride
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17. Full Text Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric
by Bhuiyan, Maruf A and Zhou, Hong and Chang, Sung-Jae and Lou, Xiabing and Gong, Xian and Jiang, Rong and Gong, Huiqi and Zhang, En Xia and Won, Chul-Ho and Lim, Jong-Won and Lee, Jung-Hee and Gordon, Roy G and Reed, Robert A and Fleetwood, Daniel M and Ye, Peide and Ma, Tso-Ping
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 01/2018, Volume 65, Issue 1, pp. 46 - 52
The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to improve with increasing GaN channel thickness. Epitaxial MgCaO shows... 
oxide traps | gallium nitride (GaN) high-electron-mobility transistor (HEMT) | Atomic layer epitaxy | Dielectrics | Gallium nitride | MODFETs | metal–oxide–semi-conductor HEMT (MOSHEMT) | radiation | HEMTs | Logic gates | Wide band gap semiconductors | MgCaO | Aluminum gallium nitride | metal-oxide-semi-conductor HEMT (MOSHEMT) | ELECTRON-MOBILITY TRANSISTORS | DEPENDENCE | ENGINEERING, ELECTRICAL & ELECTRONIC | metal-oxide-semiconductor HEMT (MOSHEMT) | ALGAN/GAN HEMTS | NUCLEAR SCIENCE & TECHNOLOGY | FINFETS | AL2O3 | ATOMIC LAYER DEPOSITION | Usage | Research | Semiconductors | Gates (Electronics) | Radiation effects | Trapping | Semiconductor devices | Gallium nitrides | Bias | Radiation | Irradiation | Silicon | High electron mobility transistors | Aluminum gallium nitrides | Transconductance | α Radiation
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18. Full Text Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors
by Xue, JunShuai and Zhang, JinCheng and Hou, YaoWei and Zhou, Hao and Zhang, JinFeng and Hao, Yue
Applied Physics Letters, ISSN 0003-6951, 01/2012, Volume 100, Issue 1, pp. 013507 - 013507-3
High quality, nearly lattice-matched InAlN/GaN/InAlN/GaN double-channel heterostructures were grown on sapphire by... 
HEMTS | PHYSICS, APPLIED
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19. Full Text High-Quality Interface in Al2O3/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation
by Yang, S and Tang, ZK and Wong, KY and Lin, YS and Liu, C and Lu, YY and Huang, S and Chen, KJ
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 12/2013, Volume 34, Issue 12, pp. 1497 - 1499
We report an in situ low-damage pre-gate treatment technology in an atomic layer deposition (ALD) system prior to the ALD-Al2O3 deposition, to realize... 
ALGAN/GAN HEMTS | V-TH instability | PASSIVATION | MIS-HEMTs | plasma nitridation | gate stack | III-nitride | hysteresis | ENGINEERING, ELECTRICAL & ELECTRONIC
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20. Full Text Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry
by Bagnall, Kevin R and Saadat, Omair I and Joglekar, Sameer and Palacios, Tomas and Wang, Evelyn N
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2017, Volume 64, Issue 5, pp. 2121 - 2128
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for realizing next generation high-power RF amplifiers and... 
Temperature measurement | pulse dc bias | Measurement by laser beam | HEMTs | micro-Raman thermometry | self-heating | time-resolved | Gallium nitride | MODFETs | Transient analysis | Gallium nitride (GaN) high-electron mobility transistors (HEMTs) | Optical pulses | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | HFETS | ALGAN/GAN HEMTS | TEMPERATURE | Gallium nitride (GaN) high-electronmobility transistors (HEMTs) | ELASTIC-CONSTANTS | SCATTERING | HEAT-CAPACITY | Usage | Raman spectroscopy | Gallium compounds | Electric properties | Thermal transients | Gallium nitrides | Thermal diffusivity
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