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IEEE transactions on industrial electronics (1982), ISSN 0278-0046, 11/2017, Volume 64, Issue 11, pp. 9012 - 9022
simulation | Switches | reliability | robustness | hard switch fault | Gallium nitride | MODFETs | failure analysis | Enhancement mode | Gallium Nitride (GaN) cascode | Short Circuit (SC) | DH-HEMTs | Logic gates | GaN High-Electron-Mobility Transistors (GaN HEMTs) | Silicon | wide band gap semiconductors | GaN Metal–Insulator–Semiconductor HEMTs (MISHEMTs) | GaN Metal-Insulator-Semiconductor HEMTs (MISHEMTs) | Engineering, Electrical & Electronic | Engineering | Automation & Control Systems | Technology | Instruments & Instrumentation | Science & Technology | Short circuits | High-electron-mobility transistors | Models | State of the art | Semiconductor devices | Gallium nitrides | Experimentation | Insulators | High electron mobility transistors | Ruggedness
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IEEE transactions on electron devices, ISSN 0018-9383, 3/2020, Volume 67, Issue 4, pp. 1 - 7
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IEEE transactions on electron devices, ISSN 0018-9383, 11/2020, Volume 67, Issue 11, pp. 4849 - 4857
Inductance | self-sustained oscillation | electron-mobility transistors (HEMTs) | Gallium nitride (GaN) | HEMTs | Logic gates | p-GaN HEMTs | short-circuit (SC) | MODFETs | Integrated circuit modeling | Gallium nitride | Oscillators | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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IEEE transactions on electron devices, ISSN 0018-9383, 05/2012, Volume 59, Issue 5, pp. 1393 - 1401
Thermodynamics | hot-electron effect | Lattices | HEMTs | Mathematical model | self-heating effect | Gallium nitride | MODFETs | Double-channel HEMTs (DC-HEMTs) | Aluminum gallium nitride | III-V semiconductors | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Electronics | Applied sciences | Transistors | Exact sciences and technology | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Usage | Numerical analysis | Field-effect transistors | Aluminum | Gallium nitrate | Innovations | Simulation methods | Electric properties
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Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric
IEEE transactions on electron devices, ISSN 0018-9383, 07/2016, Volume 63, Issue 7, pp. 2729 - 2734
High-K gate dielectrics | high-k dielectric | metal-oxide-semiconductor HEMTs (MOS-HEMTs) | Schottky diodes | HEMTs | high-electron mobility transistors (HEMTs) | MODFETs | Thermal stability | Aluminum gallium nitride | Gadolinium oxide | AlGaN/GaN | Gdâ‚‚O | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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IEEE transactions on electron devices, ISSN 0018-9383, 08/2020, Volume 67, Issue 8, pp. 3088 - 3094
drain-induced barrier lowering (DIBL) | short-channel effects (SCEs) | Electric potential | MODFETs | Gallium nitride | AlGaAS/GaAS high-electron-mobility transistor (HEMT) | channel length modulation (CLM) | AlGaN/GaN HEMT | velocity saturation | HEMTs | Wide band gap semiconductors | Integrated circuit modeling | charge-based École Polytechnique Fédérale de Lausanne (EPFL) HEMT model | Aluminum gallium nitride | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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IEEE transactions on electron devices, ISSN 0018-9383, 10/2013, Volume 60, Issue 10, pp. 3157 - 3165
leakage current modeling | AlInN/GaN HEMT | gate leakage current | parameter extraction | AlGaN/GaN high electron mobility transistor (HEMT) | HEMTs | Logic gates | Tunneling | Leakage currents | Gallium nitride | MODFETs | Aluminum gallium nitride | Gate leakage current | Algan/gan high electron mobility transistor (hemt) | Alinn/gan hemt | Leakage current modeling | Parameter extraction | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Measurement | Usage | Field-effect transistors | Analysis | Innovations | Gates (Electronics) | Voltage | Tunneling (Physics) | Electric fields
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Materials science in semiconductor processing, ISSN 1369-8001, 11/2019, Volume 103, p. 104624
Boost converter circuits | Enhancement mode | Off-state breakdown voltage VBR.OFF | Single-heterostructure (SH-HEMT) | Normally-off | Double-heterostructure HEMT(DH-HEMT) | High-electron mobility transistors (HEMTs) | Off-state breakdown voltage V | Engineering | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Engineering, Electrical & Electronic | Physics, Condensed Matter | Physics | Science & Technology | Physics, Applied
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Strain analysis of GaN HEMTs on (111) silicon with two transitional Al x Ga 1-x N layers
Materials, ISSN 1996-1944, 10/2018, Volume 11, Issue 10
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IEEE electron device letters, ISSN 0741-3106, 04/2015, Volume 36, Issue 4, pp. 327 - 329
High electron mobility transistor (HEMT) | high frequency | 25 nm gate | HEMTs | Logic gates | Gain measurement | Frequency measurement | Indium phosphide | Gain | Terahertz Monolithic Integrated Circuit (TMIC) | indium phosphide (InP) | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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IEEE electron device letters, ISSN 0741-3106, 10/2015, Volume 36, Issue 10, pp. 1001 - 1003
AlGaN/GaN HEMTs | Electric breakdown | Logic gates | HEMTs | p-GaN | Wide band gap semiconductors | Forward bias gate breakdown | Gallium nitride | MODFETs | Aluminum gallium nitride | avalanche breakdown | forward bias gate breakdown | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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IEEE transactions on electron devices, ISSN 0018-9383, 11/2019, Volume 66, Issue 11, pp. 4685 - 4691
Cutoff frequency | noise figure | MODFETs | Indium phosphide | InP high electron mobility transistors (HEMTs) | Temperature measurement | Radio frequency | GaInAs | Direct current (DC) | radio frequency (RF) | Logic gates | HEMTs | InAs channel | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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IEEE transactions on electron devices, ISSN 0018-9383, 02/2015, Volume 62, Issue 2, pp. 405 - 413
high-electron mobility transistor (HEMT) | current collapse | Gallium nitride | MODFETs | Temperature measurement | Breakdown voltage | field plate (FP) | GaN | gate leakage | HEMTs | Logic gates | ON-resistance | Aluminum gallium nitride | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Measurement | Annealing | Usage | Field-effect transistors | Ionization | Analysis | Voltage | Innovations | Gates (Electronics) | Mathematical optimization | Methods
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IEEE electron device letters, ISSN 0741-3106, 08/2008, Volume 29, Issue 8, pp. 824 - 826
switching power supply | efficiency | Power supplies | Switches | highelectron-mobility transistors (HEMTs) | Frequency conversion | high voltage | power device | Gallium nitride | MODFETs | Jacobian matrices | Silicon carbide | GaN | Voltage | HEMTs | Converter | Power generation | High electron-mobility transistors (HEMTs) | High voltage | Efficiency | Power device | Switching power supply | Electrical engineering. Electrical power engineering | Exact sciences and technology | Signal convertors | Electronics | Applied sciences | Transistors | Circuit properties | Electronic equipment and fabrication. Passive components, printed wiring boards, connectics | Electric, optical and optoelectronic circuits | Power electronics, power supplies | Electronic circuits | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Semiconductor devices | Gallium nitrides | High speed | Converters | High electron mobility transistors | Devices | Conversion
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IEEE electron device letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 988 - 990
molecular beam epitaxy (MBE) | cutoff frequency | f_{T} | AlN | InAlN | MODFETs | Gallium nitride | Delay | high-electron-mobility transistor (HEMT) | regrown ohmic contacts | GaN | HEMTs | Logic gates | Ohmic contacts | transistor | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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IEEE transactions on electron devices, ISSN 0018-9383, 01/2021, Volume 68, Issue 1, pp. 66 - 71
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IEEE transactions on electron devices, ISSN 0018-9383, 01/2021, Volume 68, Issue 1, pp. 72 - 79
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IEEE transactions on electron devices, ISSN 0018-9383, 12/2020, pp. 1 - 5
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High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE electron device letters, ISSN 0741-3106, 07/2005, Volume 26, Issue 7, pp. 435 - 437
high-electron mobility transistor (HEMT) | plasma treatment | Cutoff frequency | fluoride | Gallium nitride | MODFETs | D-HEMTs | AlGaN/GaN | Fabrication | Rapid thermal annealing | enhancement mode | HEMTs | Threshold voltage | Plasma temperature | Aluminum gallium nitride | Enhancement mode | High-electron mobility transistor (HEMT) | Fluoride | Plasma treatment | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Electronics | Applied sciences | Transistors | Exact sciences and technology | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Annealing | Semiconductor devices | Gallium nitrides | Drains | Leakage current | Aluminum gallium nitrides | High electron mobility transistors | Gates
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IEEE transactions on electron devices, ISSN 0018-9383, 11/2020, Volume 67, Issue 11, pp. 4592 - 4596
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