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1. Full Text Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs
by Fernandez, Manuel and Perpina, Xavier and Roig-Guitart, Jaume and Vellvehi, Miquel and Bauwens, Filip and Tack, Marnix and Jorda, Xavier
IEEE transactions on industrial electronics (1982), ISSN 0278-0046, 11/2017, Volume 64, Issue 11, pp. 9012 - 9022
simulation | Switches | reliability | robustness | hard switch fault | Gallium nitride | MODFETs | failure analysis | Enhancement mode | Gallium Nitride (GaN) cascode | Short Circuit (SC) | DH-HEMTs | Logic gates | GaN High-Electron-Mobility Transistors (GaN HEMTs) | Silicon | wide band gap semiconductors | GaN Metal–Insulator–Semiconductor HEMTs (MISHEMTs) | GaN Metal-Insulator-Semiconductor HEMTs (MISHEMTs) | Engineering, Electrical & Electronic | Engineering | Automation & Control Systems | Technology | Instruments & Instrumentation | Science & Technology | Short circuits | High-electron-mobility transistors | Models | State of the art | Semiconductor devices | Gallium nitrides | Experimentation | Insulators | High electron mobility transistors | Ruggedness
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2. Full Text Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs
by Xue, Peng and Maresca, Luca and Riccio, Michele and Breglio, Giovanni and Irace, Andrea
IEEE transactions on electron devices, ISSN 0018-9383, 3/2020, Volume 67, Issue 4, pp. 1 - 7
DH-HEMTs | Switches | Logic gates | HEMTs | Cascode GaN high-electron-mobility transistors (HEMTs) | short-circuit (SC) failure | Gallium nitride | MODFETs | Oscillators | SC instability
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3. Full Text A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs
by Xue, Peng and Maresca, Luca and Riccio, Michele and Breglio, Giovanni and Irace, Andrea
IEEE transactions on electron devices, ISSN 0018-9383, 11/2020, Volume 67, Issue 11, pp. 4849 - 4857
Inductance | self-sustained oscillation | electron-mobility transistors (HEMTs) | Gallium nitride (GaN) | HEMTs | Logic gates | p-GaN HEMTs | short-circuit (SC) | MODFETs | Integrated circuit modeling | Gallium nitride | Oscillators | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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4. Full Text The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
by Xiao-Dong Wang and Wei-Da Hu and Xiao-Shuang Chen and Wei Lu
IEEE transactions on electron devices, ISSN 0018-9383, 05/2012, Volume 59, Issue 5, pp. 1393 - 1401
Thermodynamics | hot-electron effect | Lattices | HEMTs | Mathematical model | self-heating effect | Gallium nitride | MODFETs | Double-channel HEMTs (DC-HEMTs) | Aluminum gallium nitride | III-V semiconductors | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Electronics | Applied sciences | Transistors | Exact sciences and technology | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Usage | Numerical analysis | Field-effect transistors | Aluminum | Gallium nitrate | Innovations | Simulation methods | Electric properties
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5. Full Text Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric
by Gao, Zhan and Romero, Maria Fatima and Pampillon, Maria Angela and San Andres, Enrique and Calle, Fernando
IEEE transactions on electron devices, ISSN 0018-9383, 07/2016, Volume 63, Issue 7, pp. 2729 - 2734
High-K gate dielectrics | high-k dielectric | metal-oxide-semiconductor HEMTs (MOS-HEMTs) | Schottky diodes | HEMTs | high-electron mobility transistors (HEMTs) | MODFETs | Thermal stability | Aluminum gallium nitride | Gadolinium oxide | AlGaN/GaN | Gdâ‚‚O | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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6. Full Text Modeling of Short-Channel Effects in GaN HEMTs
by Allaei, Mojtaba and Shalchian, Majid and Jazaeri, Farzan
IEEE transactions on electron devices, ISSN 0018-9383, 08/2020, Volume 67, Issue 8, pp. 3088 - 3094
drain-induced barrier lowering (DIBL) | short-channel effects (SCEs) | Electric potential | MODFETs | Gallium nitride | AlGaAS/GaAS high-electron-mobility transistor (HEMT) | channel length modulation (CLM) | AlGaN/GaN HEMT | velocity saturation | HEMTs | Wide band gap semiconductors | Integrated circuit modeling | charge-based École Polytechnique Fédérale de Lausanne (EPFL) HEMT model | Aluminum gallium nitride | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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7. Full Text Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
by Turuvekere, Sreenidhi and Karumuri, Naveen and Rahman, A. Azizur and Bhattacharya, Arnab and DasGupta, Amitava and DasGupta, Nandita
IEEE transactions on electron devices, ISSN 0018-9383, 10/2013, Volume 60, Issue 10, pp. 3157 - 3165
leakage current modeling | AlInN/GaN HEMT | gate leakage current | parameter extraction | AlGaN/GaN high electron mobility transistor (HEMT) | HEMTs | Logic gates | Tunneling | Leakage currents | Gallium nitride | MODFETs | Aluminum gallium nitride | Gate leakage current | Algan/gan high electron mobility transistor (hemt) | Alinn/gan hemt | Leakage current modeling | Parameter extraction | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Measurement | Usage | Field-effect transistors | Analysis | Innovations | Gates (Electronics) | Voltage | Tunneling (Physics) | Electric fields
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8. Full Text Optimization of enhancement mode P-type Mg-doped In0.2Ga0.8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits
by Tarauni, Yusuf U and Thiruvadigal, D. John and Joseph, Bijo and Mohanbabu, A
Materials science in semiconductor processing, ISSN 1369-8001, 11/2019, Volume 103, p. 104624
Boost converter circuits | Enhancement mode | Off-state breakdown voltage VBR.OFF | Single-heterostructure (SH-HEMT) | Normally-off | Double-heterostructure HEMT(DH-HEMT) | High-electron mobility transistors (HEMTs) | Off-state breakdown voltage V | Engineering | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Engineering, Electrical & Electronic | Physics, Condensed Matter | Physics | Science & Technology | Physics, Applied
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9. Full Text Strain analysis of GaN HEMTs on (111) silicon with two transitional Al x Ga 1-x N layers
by Cai, Yuefei and Zhu, Chenqi and Jiu, Ling and Gong, Yipin and Yu, Xiang and Bai, Jie and Esendag, Volkan and Wang, Tao
Materials, ISSN 1996-1944, 10/2018, Volume 11, Issue 10
HEMTs | Crack-free | Silicon | Strain
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10. Full Text First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
by Xiaobing Mei and Yoshida, Wayne and Lange, Mike and Lee, Jane and Zhou, Joe and Po-Hsin Liu and Leong, Kevin and Zamora, Alex and Padilla, Jose and Sarkozy, Stephen and Lai, Richard and Deal, William R
IEEE electron device letters, ISSN 0741-3106, 04/2015, Volume 36, Issue 4, pp. 327 - 329
High electron mobility transistor (HEMT) | high frequency | 25 nm gate | HEMTs | Logic gates | Gain measurement | Frequency measurement | Indium phosphide | Gain | Terahertz Monolithic Integrated Circuit (TMIC) | indium phosphide (InP) | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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11. Full Text Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors
by Tian-Li Wu and Marcon, Denis and Shuzhen You and Posthuma, Niels and Bakeroot, Benoit and Stoffels, Steve and Van Hove, Marleen and Groeseneken, Guido and Decoutere, Stefaan
IEEE electron device letters, ISSN 0741-3106, 10/2015, Volume 36, Issue 10, pp. 1001 - 1003
AlGaN/GaN HEMTs | Electric breakdown | Logic gates | HEMTs | p-GaN | Wide band gap semiconductors | Forward bias gate breakdown | Gallium nitride | MODFETs | Aluminum gallium nitride | avalanche breakdown | forward bias gate breakdown | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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12. Full Text InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs
by Ruiz, Diego C and Saranovac, Tamara and Han, Daxin and Hambitzer, Anna and Arabhavi, Akshay M and Ostinelli, Olivier and Bolognesi, C. R
IEEE transactions on electron devices, ISSN 0018-9383, 11/2019, Volume 66, Issue 11, pp. 4685 - 4691
Cutoff frequency | noise figure | MODFETs | Indium phosphide | InP high electron mobility transistors (HEMTs) | Temperature measurement | Radio frequency | GaInAs | Direct current (DC) | radio frequency (RF) | Logic gates | HEMTs | InAs channel | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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13. Full Text Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
by Kuzuhara, Masaaki and Tokuda, Hirokuni
IEEE transactions on electron devices, ISSN 0018-9383, 02/2015, Volume 62, Issue 2, pp. 405 - 413
high-electron mobility transistor (HEMT) | current collapse | Gallium nitride | MODFETs | Temperature measurement | Breakdown voltage | field plate (FP) | GaN | gate leakage | HEMTs | Logic gates | ON-resistance | Aluminum gallium nitride | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Measurement | Annealing | Usage | Field-effect transistors | Ionization | Analysis | Voltage | Innovations | Gates (Electronics) | Mathematical optimization | Methods
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14. Full Text A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz
by Yifeng Wu and Jacob-Mitos, M and Moore, M.L and Heikman, S
IEEE electron device letters, ISSN 0741-3106, 08/2008, Volume 29, Issue 8, pp. 824 - 826
switching power supply | efficiency | Power supplies | Switches | highelectron-mobility transistors (HEMTs) | Frequency conversion | high voltage | power device | Gallium nitride | MODFETs | Jacobian matrices | Silicon carbide | GaN | Voltage | HEMTs | Converter | Power generation | High electron-mobility transistors (HEMTs) | High voltage | Efficiency | Power device | Switching power supply | Electrical engineering. Electrical power engineering | Exact sciences and technology | Signal convertors | Electronics | Applied sciences | Transistors | Circuit properties | Electronic equipment and fabrication. Passive components, printed wiring boards, connectics | Electric, optical and optoelectronic circuits | Power electronics, power supplies | Electronic circuits | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Semiconductor devices | Gallium nitrides | High speed | Converters | High electron mobility transistors | Devices | Conversion
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15. Full Text InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f of 370 GHz
by Yuanzheng Yue and Zongyang Hu and Jia Guo and Sensale-Rodriguez, B and Guowang Li and Ronghua Wang and Faria, F and Tian Fang and Bo Song and Xiang Gao and Shiping Guo and Kosel, T and Snider, G and Fay, P and Jena, D and Huili Xing
IEEE electron device letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 988 - 990
molecular beam epitaxy (MBE) | cutoff frequency | f_{T} | AlN | InAlN | MODFETs | Gallium nitride | Delay | high-electron-mobility transistor (HEMT) | regrown ohmic contacts | GaN | HEMTs | Logic gates | Ohmic contacts | transistor | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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16. Full Text Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress
by Chen, Qiang and Chen, Y. Q and Liu, Chang and Geng, Kuiwei and He, Yujuan and Gao, Rui and Huang, Yun and Yang, Xiaodong
IEEE transactions on electron devices, ISSN 0018-9383, 01/2021, Volume 68, Issue 1, pp. 66 - 71
Radio frequency | AlGaN/GaN HEMTs | low-frequency noise (LFN) | Logic gates | HEMTs | Wide band gap semiconductors | trap | MODFETs | Aluminum gallium nitride | Stress | radio frequency (RF) stress
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17. Full Text Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs-Part I
by Joshi, Vipin and Dutta Gupta, Sayak and Roy Chaudhuri, Rajarshi and Shrivastava, Mayank
IEEE transactions on electron devices, ISSN 0018-9383, 01/2021, Volume 68, Issue 1, pp. 72 - 79
Electron traps | AlGaN/GaN HEMTs | device breakdown | surface traps | Electric breakdown | HEMTs | Logic gates | Wide band gap semiconductors | electric field engineering | Gallium nitride | Aluminum gallium nitride
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18. Full Text 1300 V Normally-OFF p-GaN Gate HEMTs on Si With High on-State Drain Current
by Jiang, Huaxing and Lyu, Qifeng and Zhu, Renqiang and Xiang, Peng and Cheng, Kai and Lau, Kei May
IEEE transactions on electron devices, ISSN 0018-9383, 12/2020, pp. 1 - 5
GaN-on-Si | Breakdown voltage | normally-OFF | p-GaN gate high electron mobility transistors (HEMTs) | Logic gates | HEMTs | Silicon | MODFETs | Substrates | Stress | Passivation
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19. Full Text High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
by Yong Cai and Yugang Zhou and Chen, K.J and Lau, K.M
IEEE electron device letters, ISSN 0741-3106, 07/2005, Volume 26, Issue 7, pp. 435 - 437
high-electron mobility transistor (HEMT) | plasma treatment | Cutoff frequency | fluoride | Gallium nitride | MODFETs | D-HEMTs | AlGaN/GaN | Fabrication | Rapid thermal annealing | enhancement mode | HEMTs | Threshold voltage | Plasma temperature | Aluminum gallium nitride | Enhancement mode | High-electron mobility transistor (HEMT) | Fluoride | Plasma treatment | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Electronics | Applied sciences | Transistors | Exact sciences and technology | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Annealing | Semiconductor devices | Gallium nitrides | Drains | Leakage current | Aluminum gallium nitrides | High electron mobility transistors | Gates
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20. Full Text Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs
by ElKashlan, R. Y and Rodriguez, R and Yadav, S and Khaled, A and Peralagu, U and Alian, A and Waldron, N and Zhao, M and Wambacq, P and Parvais, B and Collaert, N
IEEE transactions on electron devices, ISSN 0018-9383, 11/2020, Volume 67, Issue 11, pp. 4592 - 4596
Resistance | Radio frequency | microwave and millimeter-wave | RF GaN HEMTs on Si | Logic gates | HEMTs | Gate resistance | Electrical resistance measurement | MODFETs | Gallium nitride
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