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Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10, p. 103506
Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n(-)-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped... 
ALGAN/GAN HEMTS | VOLTAGE | PHYSICS, APPLIED
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2015, Volume 36, Issue 12, pp. 1287 - 1290
A low on-resistance normally-off GaN double-channel metal-oxide-semiconductor high-electronmobility transistor (DC-MOS-HEMT) is proposed and demonstrated in... 
gate recess | normally-off | Logic gates | HEMTs | field-effect mobility | Wide band gap semiconductors | Gallium nitride | Double-channel MOS-HEMT (DC-MOSHEMT) | Aluminum gallium nitride | Aluminum nitride | MOS devices | ALGAN/GAN HEMTS | INTERFACE | Double-channel MOS-HEMT (DC-MOS-HEMT) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 988 - 990
We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency ( fT ) of 370 GHz. The... 
molecular beam epitaxy (MBE) | cutoff frequency | f_{T} | AlN | InAlN | MODFETs | Gallium nitride | Delay | high-electron-mobility transistor (HEMT) | regrown ohmic contacts | GaN | HEMTs | Logic gates | Ohmic contacts | transistor | INALN/GAN HEMTS | f(T) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2012, Volume 100, Issue 23, pp. 233508 - 233508-3
This paper reports on an extensive analysis of the degradation of AlGaN/GaN high electron mobility transistors (HEMTs) submitted to on-state and off-state... 
HEMTS | PHYSICS, APPLIED | RELIABILITY
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 08/2013, Volume 52, Issue 8
We report on 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (f(T)) of 400 GHz.... 
HEMTS | GHZ | PHYSICS, APPLIED
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2018, Volume 65, Issue 5, pp. 1753 - 1758
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2019, Volume 40, Issue 7, pp. 1056 - 1059
We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template... 
Performance evaluation | large-signal | radio frequency | small-signal | HEMT | ScAlN | Gallium nitride | MODFETs | Current measurement | GaN | Logic gates | HEMTs | Transconductance | INALN/ALN/GAN HEMTS | ALGAN/GAN HEMTS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2015, Volume 62, Issue 6, pp. 2417 - 2422
The effects of proton-induced displacement damage in GaN HEMTs on circuit-level RF power amplifier parameters such as circuit gain, stability, and RF output... 
Protons | Radio frequency | Radiation effects | HEMT | S-parameters | HEMTs | Power semiconductor devices | Gallium nitride | proton | power semiconductor devices | radiation effects | DEFECTS | PERFORMANCE | ELECTRON-MOBILITY TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | ALGAN/GAN HEMTS | NUCLEAR SCIENCE & TECHNOLOGY | DEGRADATION | DEVICES | GAN HEMTS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2010, Volume 31, Issue 3, pp. 189 - 191
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 05/2016, Volume 108, Issue 19
We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40... 
PHYSICS, APPLIED | OPERATION | HEMTS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2015, Volume 106, Issue 5, p. 51605
We report the interface characterization of Al2O3/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like... 
AL2O3/GAN MOSFET | PHYSICS, APPLIED | INSTABILITY | ALGAN/GAN HEMTS | PASSIVATION | PERFORMANCE | MIS-HEMTS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2013, Volume 103, Issue 3, p. 33509
Traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are identified and compared using constant drain-current deep level transient... 
HEMTS | DEFECTS | PHYSICS, APPLIED | PERFORMANCE
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 12, pp. 1497 - 1499
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2019, Volume 125, Issue 23, p. 235701
The excellent characteristics of high electron mobility transistors based on AlGaN/GaN heterostructures rely on the properties of the substrate used for their... 
HEMTS | PHYSICS, APPLIED | FILM | STRAIN
Journal Article
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2012, Volume 100, Issue 1, pp. 013507 - 013507-3
High quality, nearly lattice-matched InAlN/GaN/InAlN/GaN double-channel heterostructures were grown on sapphire by... 
HEMTS | PHYSICS, APPLIED
Journal Article
by Yang, S and Tang, ZK and Wong, KY and Lin, YS and Liu, C and Lu, YY and Huang, S and Chen, KJ
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 12/2013, Volume 34, Issue 12, pp. 1497 - 1499
We report an in situ low-damage pre-gate treatment technology in an atomic layer deposition (ALD) system prior to the ALD-Al2O3 deposition, to realize... 
ALGAN/GAN HEMTS | V-TH instability | PASSIVATION | MIS-HEMTs | plasma nitridation | gate stack | III-nitride | hysteresis | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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