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Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2010, Volume 31, Issue 3, pp. 189 - 191
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 02/2012, Volume 134, Issue 5, pp. 2760 - 2765
Field-effect transistors based on single crystals of organic semiconductors have the highest reported charge carrier mobility among organic materials,... 
ORGANIC TRANSISTORS | HIGH-PERFORMANCE | CIRCUITS | SOLUTION-PHASE | N-TYPE | SEMICONDUCTORS | THIN-FILM TRANSISTORS | HIGH-ELECTRON-MOBILITY | PENTACENE | SENSORS | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
Chemical Communications, ISSN 1359-7345, 05/2011, Volume 47, Issue 18, pp. 5109 - 5115
The development of ambient stable organic n-channel semiconductor molecules for thin-film transistors has experienced a tremendous impetus in the last decade... 
HIGH-PERFORMANCE | CORE | COMPLEMENTARY CIRCUITS | AMBIPOLAR TRANSPORT | GATE DIELECTRICS | CHARGE-TRANSPORT | THIN-FILM TRANSISTORS | HIGH-ELECTRON-MOBILITY | N-CHANNEL SEMICONDUCTORS | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS
Journal Article
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, ISSN 0002-7863, 12/2011, Volume 133, Issue 50, pp. 20009 - 20029
Organic electronics are broadly anticipated to impact the development of flexible thin-film device technologies. Among these, solution-processable... 
STRUCTURE-PROPERTY RELATIONSHIPS | OPEN-CIRCUIT VOLTAGE | ENERGY-CONVERSION EFFICIENCY | CHARGE-TRANSFER STATES | THIN-FILM TRANSISTORS | HIGH-ELECTRON-MOBILITY | LOW-BAND-GAP | N-CHANNEL SEMICONDUCTORS | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | POLYMER PHOTOVOLTAIC CELLS
Journal Article
by Wu, WP and Liu, YQ and Zhu, DB
CHEMICAL SOCIETY REVIEWS, ISSN 0306-0012, 2010, Volume 39, Issue 5, pp. 1489 - 1502
pi-Conjugated molecular materials with fused rings are the focus of considerable interest in the emerging area of organic electronics, since the combination of... 
HIGH-PERFORMANCE | N-TYPE | FACILE SYNTHESIS | SEMICONDUCTORS | CHARGE-TRANSPORT | THIN-FILM TRANSISTORS | HIGH-ELECTRON-MOBILITY | LANGMUIR-BLODGETT-FILMS | DERIVATIVES | CHEMISTRY, MULTIDISCIPLINARY | AMBIPOLAR
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 07/2010, Volume 132, Issue 26, pp. 8852 - 8853
We present here the development of a new solution-processable n-type dopant, N-DMBI. Our experimental results demonstrated that a well-known n-channel... 
LIGHT-EMITTING-DIODES | TRANSPORT | REDUCTION | MECHANISM | DIIMIDE SEMICONDUCTORS | POLYMER | DIANHYDRIDE | HIGH-ELECTRON-MOBILITY | HYDROGEN-ATOM | C-60 | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2018, Volume 65, Issue 10, pp. 4462 - 4468
Journal Article
Chemical Society Reviews, ISSN 0306-0012, 07/2010, Volume 39, Issue 7, pp. 2643 - 2666
Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a... 
HIGH-PERFORMANCE | COMPLEMENTARY CIRCUITS | SELF-ASSEMBLED MONOLAYERS | HIGH CARRIER MOBILITY | LOW-VOLTAGE | POLYMER INTEGRATED-CIRCUITS | HIGH-ELECTRON-MOBILITY | N-CHANNEL TRANSISTORS | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | ACTIVE-MATRIX DISPLAYS
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 01/2009, Volume 131, Issue 1, pp. 8 - 9
Two new n-channel polymeric semiconductors for organic thin-film transistors (TFTs) based on electron-depleted perylene- (PDI) and naphthalene-dicarboxyimide... 
DESIGN | TRANSPORT | CYCLOPENTADITHIOPHENE | DIIMIDE SEMICONDUCTORS | POLYMER | HIGH-ELECTRON-MOBILITY | THIN-FILM TRANSISTORS | THIOPHENE | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 03/2004, Volume 25, Issue 3, pp. 117 - 119
GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance. Great enhancement in... 
POWER PERFORMANCE | field plate | high-electron-mobility-transistors (HEMT) | GaN | microwave power | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 09/2019, Volume 48, Issue 9, p. 5581
Gate length dependent (80 nm--5000 mm) radio frequency measurements to extract saturation velocity are reported for... 
Measurement | Speed | High-electron-mobility transistors | Electric properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 1998, Volume 72, Issue 14, pp. 1718 - 1720
A method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented. This... 
HIGH-ELECTRON-MOBILITY | PHYSICS, APPLIED | HETEROSTRUCTURES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2006, Volume 89, Issue 11, pp. 112108 - 112108-3
The authors demonstrated that N , N ′ -ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) thin-film transistors (TFTs) exhibited high field-effect... 
HIGH-ELECTRON-MOBILITY | TRANSPORT | PHYSICS, APPLIED | TEMPERATURE | SEMICONDUCTORS | FIELD-EFFECT TRANSISTORS
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 12/2012, Volume 134, Issue 49, pp. 20025 - 20028
Ambipolar transport behavior in isoindigo-based conjugated polymers is observed for the first time. Fluorination on the isoindigo unit effectively lowers the... 
HOLE | TRANSPORT | CONJUGATED POLYMERS | SEMICONDUCTORS | THIN-FILM TRANSISTORS | HIGH-ELECTRON-MOBILITY | SOLAR-CELL APPLICATIONS | COPOLYMERS | EFFICIENCY | CHEMISTRY, MULTIDISCIPLINARY | ACCEPTOR | Thermal properties | Analysis | Electron mobility | Chemical properties | Fluorination | Polymers | Electron-electron interactions | Methods
Journal Article
Sensors (Switzerland), ISSN 1424-8220, 09/2018, Volume 18, Issue 9
InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are... 
InAlN | Wafer-scale | High-electron-mobility transistor (HEMT) | Swing
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2002, Volume 23, Issue 8, pp. 455 - 457
AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12 mum gate length have been fabricated. These 0.12-mum... 
SiC | GaN | High electron mobility transistors (HEMTs)
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 02/2014, Volume 136, Issue 5, pp. 2135 - 2141
The charge carrier mobility of p-type and ambipolar polymer field-effect transistors (FETs) has been improved substantially. Nonetheless, high-mobility n-type... 
BACKBONE CURVATURE | DONOR-ACCEPTOR POLYMERS | SOLAR-CELLS | CONJUGATED POLYMERS | CHARGE-TRANSPORT | THIN-FILM TRANSISTORS | PRINTED TRANSISTORS | HIGH-HOLE-MOBILITY | CM V-1 S(-1) | ORGANIC SEMICONDUCTORS | CHEMISTRY, MULTIDISCIPLINARY | High-electron-mobility transistors | Research | Properties | Fluorine | Analysis
Journal Article
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