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01/2019, ISBN 3038978434
eBook
Journal of applied physics, ISSN 1089-7550, 12/2009, Volume 106, Issue 12, pp. 124503 - 124503-7
We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state... 
Physical Sciences | Physics | Science & Technology | Physics, Applied | High-electron-mobility transistors | Composition | Semiconductor-metal boundaries | Analysis | Indium | Gallium compounds | Aluminum nitride | Electric properties
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2010, Volume 108, Issue 6, pp. 063706 - 063706-6
Electrical properties, including leakage currents, threshold voltages, and deep traps, of AlGaN/GaN heterostructure wafers with different concentrations of... 
Physical Sciences | Physics | Science & Technology | Physics, Applied | Thermal properties | High-electron-mobility transistors | Aluminum | Analysis | Mechanical properties | Diodes, Schottky-barrier | Design and construction | Gallium compounds | Electric properties
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 02/2014, Volume 136, Issue 5, pp. 2135 - 2141
The charge carrier mobility of p-type and ambipolar polymer field-effect transistors (FETs) has been improved substantially. Nonetheless, high-mobility n-type... 
High-electron-mobility transistors | Research | Properties | Fluorine | Analysis
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2010, Volume 107, Issue 2, pp. 024504 - 024504-4
We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be... 
Physical Sciences | Physics | Science & Technology | Physics, Applied | Aluminum alloys | Gallium | High-electron-mobility transistors | Analysis | Gates (Electronics) | Electric properties
Journal Article
Nature (London), ISSN 1476-4687, 01/2009, Volume 457, Issue 7230, pp. 679 - 686
Printed electronics is a revolutionary technology aimed at unconventional electronic device manufacture on plastic foils, and will probably rely on polymeric... 
Science & Technology - Other Topics | Multidisciplinary Sciences | Science & Technology | High-electron-mobility transistors | Usage | Semiconductors | Properties | Structure | Analysis | Differential scanning calorimetry | Circuits | Polyethylene terephthalate | Polymers | Molecular weight | Current ratio | Electrons
Journal Article
Microelectronic engineering, ISSN 0167-9317, 03/2015, Volume 135, pp. 57 - 72
Journal Article
Microsystem Technologies, ISSN 0946-7076, 5/2019, Volume 25, Issue 5, pp. 1927 - 1935
This paper aims to characterize two high electron mobility transistors analyzed with sapphire and 4H-SiC substrate. Comparison of the two structures are... 
Electronics and Microelectronics, Instrumentation | Engineering | Mechanical Engineering | Nanotechnology | Transistors | Comparative analysis | Silicon carbide | Resistance | Semiconductor devices | Sapphire | Electron mobility | Threshold voltage | Aluminum gallium nitrides | High electron mobility transistors | Substrates | Transconductance | Electrons
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2009, Volume 106, Issue 7, pp. 074519 - 074519-7
The characteristics of different GaN transistor devices characterized at elevated temperatures for power applications are compared in this paper. High... 
Physical Sciences | Physics | Science & Technology | Physics, Applied | Thermal properties | Metal oxide semiconductor field effect transistors | High-electron-mobility transistors | Composition | Analysis | Phonons | Research | Transistors | Gallium compounds | Electric properties
Journal Article
IEEE electron device letters, ISSN 0741-3106, 09/2010, Volume 31, Issue 9, pp. 957 - 959
Journal Article