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Journal of Alloys and Compounds, ISSN 0925-8388, 12/2014, Volume 615, pp. 899 - 905
Journal Article
Materials Research Bulletin, ISSN 0025-5408, 04/2017, Volume 88, pp. 320 - 329
....•Small polaron hopping is the most probable conduction mechanism.•Distribution of local electrical response time is temperature independent. Y2/3Cu3Ti4O12 (YCTO... 
Y2/3Cu3Ti4O12 | Ceramics | Scaling behavior | Polaron hopping | Dielectric relaxation | PERMITTIVITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRICAL-PROPERTIES | CONDUCTIVITY SPECTRA | SCALING PROPERTIES | CONSTANT | GLASSES | CACU3TI4O12 CERAMICS | SPECTROSCOPY | TEMPERATURE | HEXAFERRITE
Journal Article
by Liu, N and Yan, P and Li, Y and Lu, K and Sun, H J and Ji, H K and Xue, K H and Miao, X S
Applied Physics A, ISSN 0947-8396, 2/2018, Volume 124, Issue 2, pp. 1 - 7
Journal Article
Physical chemistry chemical physics : PCCP, ISSN 1463-9076, 11/2017, Volume 19, Issue 43, pp. 29472 - 29482
The effects of Co doping on the structural, optical, magnetic and transport properties of (In 0.98− x Co x Sn 0.02 ) 2 O 3 films grown by RF-magnetron... 
Antiferromagnetism | Transport properties | Vacancies | Doping | Photoluminescence | Ferromagnetic materials | Metal clusters | Hopping conduction | Current carriers | Magnetron sputtering | Optical properties | Indium oxides | Coordination compounds | Carrier density | Room temperature | Magnetic properties
Journal Article
Journal of the American Ceramic Society, ISSN 0002-7820, 07/2019, Volume 102, Issue 7, pp. 4038 - 4047
Journal Article
Sensors & Actuators: B. Chemical, ISSN 0925-4005, 02/2015, Volume 207, pp. 235 - 242
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2011, Volume 99, Issue 25, pp. 253506 - 253506-3
... that the main conduction mechanism responsible for the reverse-bias leakage is tunneling. In GaN pn junction photodetectors, the reverse leakage current was attributed... 
CAPACITANCE-VOLTAGE | PHYSICS, APPLIED | HOPPING CONDUCTION | GAN | SEMICONDUCTORS
Journal Article
Journal of Raman Spectroscopy, ISSN 0377-0486, 12/2017, Volume 48, Issue 12, pp. 1718 - 1724
... motion of the organic part [(C4H9)4N]+. The analysis of Nyquist plots has revealed the contribution of two electrical active regions corresponding to the bulk mechanism and the distribution of grain boundaries... 
order–disorder | Raman scattering | AC conductivity | thermal analysis | Grain boundaries | Raman spectroscopy | Analysis | Electric properties | Raman spectra | Conduction | Differential scanning calorimetry | Nyquist plots | Order disorder | Phase transitions | Hopping conduction | Wavelengths | Electrical resistivity | Conduction heating | Calorimetry | Alternating current
Journal Article
RSC Advances, ISSN 2046-2069, 04/2016, Volume 6, Issue 46, pp. 3975 - 39757
Rubidium aluminium diphosphate was synthesized by a conventional solid-state technique and its conduction properties determined by impedance spectroscopy.... 
AC CONDUCTIVITY | RELAXATION | POLARON TUNNELING MODEL | IMPEDANCE SPECTROSCOPY | DIELECTRIC PERMITTIVITY | CHEMISTRY, MULTIDISCIPLINARY | Grains | Mathematical models | Cations | Hopping (conductivity) | Impedance spectroscopy | Diphosphates | Relaxation time | Alternating current
Journal Article
JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN 0022-3727, 03/2019, Volume 52, Issue 10, p. 105103
.... Moreover, the anomalous low resistivity in the amorphous OCT is considered to be due to a large carrier density, but the mechanism of electrical transport is still not clear... 
THIN-FILMS | THERMAL-STABILITY | CRYSTALLIZATION | TEMPERATURE CONDUCTIVITY | PHYSICS, APPLIED | amorphous | Cr-Ge-Te | KINETICS | hopping conduction | ALLOY | conduction mechanism | COULOMB GAP
Journal Article
Physical Chemistry Chemical Physics, ISSN 1463-9076, 2014, Volume 16, Issue 38, pp. 20900 - 20908
In this paper, we have carefully investigated the operation of a photoelectrochemical (PEC) cell configured of PbOx vertical bar Fe(CN)(6)(-4/-3)vertical bar... 
IONIC LIQUID ELECTROLYTES | LEAD-OXIDE | ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY | SOLAR-CELLS | INTERFACE | DIFFUSION IMPEDANCE | PERFORMANCE | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | ELECTRODES | CHEMISTRY, PHYSICAL | PARAMETERS | ADSORPTION | Photoelectric effect | Photocurrent | Depletion | Semiconductors | Correlation analysis | Inversions | Hopping (conductivity) | Charge transfer
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2009, Volume 94, Issue 11, pp. 112112 - 112112-3
The local structures of amorphous In-Ga-Zn-O ( InGaZnO 4 and In 2 Ga 2 ZnO 7 ) films were examined by x-ray absorption spectroscopy and fine structure... 
gallium compounds | PHYSICS, APPLIED | bond lengths | ternary semiconductors | indium compounds | band structure | hopping conduction | OXIDE SEMICONDUCTORS | localised states | semiconductor thin films | X-ray absorption spectra | amorphous semiconductors | CARRIER TRANSPORT | fine structure
Journal Article
physica status solidi (b), ISSN 0370-1972, 09/2016, Volume 253, Issue 9, pp. 1855 - 1860
We study the electrical transport mechanism of amorphous Ge2Sb2Te5 (GST) phase‐change memory material... 
amorphous Ge2Sb2Te5 | phase change memories | variable range hopping | electrical transport | amorphous Ge | ELECTRONIC-PROPERTIES | PHYSICS, CONDENSED MATTER | CONDUCTION
Journal Article
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, ISSN 0957-4522, 05/2018, Volume 29, Issue 10, pp. 8107 - 8134
Journal Article
19.