X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (241) 241
Conference Proceeding (21) 21
Publication (18) 18
Patent (15) 15
Newspaper Article (6) 6
Newsletter (5) 5
Book Chapter (1) 1
Government Document (1) 1
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
hydrogen silsesquioxane (176) 176
physics, applied (145) 145
nanoscience & nanotechnology (114) 114
engineering, electrical & electronic (94) 94
lithography (69) 69
materials science, multidisciplinary (68) 68
hydrogen (63) 63
electron beam lithography (56) 56
optics (55) 55
resist (55) 55
resists (49) 49
fabrication (48) 48
nanostructure (38) 38
silicon (34) 34
electron-beam lithography (32) 32
hsq (31) 31
wasserstoff (29) 29
nanocomposites (27) 27
elektronenstrahllithographie (26) 26
nanomaterials (26) 26
chemistry, multidisciplinary (24) 24
chemistry, physical (22) 22
films (22) 22
chemistry (21) 21
nanotechnology (21) 21
physics, condensed matter (21) 21
nanolithography (19) 19
organic chemistry (19) 19
physics (19) 19
contrast (18) 18
integrated circuit fabrication (18) 18
polymer science (18) 18
arrays (17) 17
nanofabrication (17) 17
polymers (17) 17
temperature (17) 17
poly (16) 16
acyclic, carbocyclic or heterocyclic compounds containingelements other than carbon, hydrogen, halogen, oxygen, nitrogen,sulfur, selenium or tellurium (15) 15
compositions based thereon (15) 15
holography (15) 15
macromolecular compounds obtained otherwise than by reactionsonly involving unsaturated carbon-to-carbon bonds (15) 15
metallurgy (15) 15
organic macromolecular compounds (15) 15
photography (15) 15
their preparation or chemical working-up (15) 15
apparatus specially adapted therefor (14) 14
cinematography (14) 14
electrography (14) 14
materials therefor (14) 14
nanowires (14) 14
originals therefor (14) 14
photomechanical production of textured or patterned surfaces,e.g. for printing, for processing of semiconductordevices (14) 14
roughness (14) 14
electron beams (13) 13
elektron (13) 13
index medicus (13) 13
instruments & instrumentation (13) 13
nanostructures (13) 13
analysis (12) 12
etching (12) 12
lithographie (12) 12
patterning (12) 12
semiconductor devices (12) 12
sensitivity (12) 12
thin-films (12) 12
nanoimprint lithography (11) 11
nanoparticles (11) 11
nanostruktur (11) 11
devices (10) 10
graphene (10) 10
high-resolution (10) 10
microelectronics (10) 10
polymer (10) 10
auxiliary processes in photography (9) 9
basic electric elements (9) 9
electric solid state devices not otherwise provided for (9) 9
electricity (9) 9
general tagging of cross-sectional technologies spanning over several sections of the ipc (9) 9
general tagging of new technological developments (9) 9
high resolution (9) 9
macromolecular compounds obtained by reactions only involvingcarbon-to-carbon unsaturated bonds (9) 9
materials science, coatings & films (9) 9
nanometerbereich (9) 9
photographic processes, e.g. cine, x-ray, colour,stereo-photographic processes (9) 9
photosensitive materials for photographic purposes (9) 9
proton beam writing (9) 9
technical subjects covered by former uspc (9) 9
technical subjects covered by former uspc cross-reference art collections [xracs] and digests (9) 9
ätzen (9) 9
beam lithography (8) 8
hydrogen bonding (8) 8
layer (8) 8
computer simulation (7) 7
deposition (7) 7
electron beam resist (7) 7
electron-beam resist (7) 7
gold (7) 7
graphite (7) 7
microscopy (7) 7
nanofabrikation (7) 7
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Microelectronic Engineering, ISSN 0167-9317, 2011, Volume 88, Issue 10, pp. 3070 - 3074
We fabricated 9–30 nm half-pitch nested Ls and 13–15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the... 
Low-energy electron-beam lithography | Proximity effect | High resolution | Hydrogen silsesquioxane | Low-voltage electron-beam lithography | ENERGY | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Residues | Accuracy | Simulation | Electron beam lithography | Resists | Proximity effect (electricity) | Microelectronics | Arrays
Journal Article
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, ISSN 1071-1023, 11/2011, Volume 29, Issue 6, pp. 06FJ02 - 06FJ02-7
Hydrogen silsesquioxane (HSQ) is a high resolution negative tone electron beam (e-beam) resist with a resolution well below 10 nm. However, it is known that... 
electron resists | PHYSICS, APPLIED | HSQ | SENSITIVITY | NANOSCIENCE & NANOTECHNOLOGY | MOISTURE RESISTANCE | ELECTRON-BEAM RESIST | spin coating | thin films | ENGINEERING, ELECTRICAL & ELECTRONIC | surfactants | hydrogen compounds | FILMS | LINEWIDTH FLUCTUATIONS | TEMPERATURE | delays | CONTRAST | polymers | LITHOGRAPHY
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, ISSN 0021-4922, 06/2006, Volume 45, Issue 6B, pp. 5538 - 5541
We have investigated a process for fabricating three-dimensional (3D) structures using electron beam lithography (EBL), in which such a structure is fabricated... 
PHYSICS, APPLIED | FILMS | electron beam (EB) lithography | three-dimensional structure | SILICON | hydrogen silsesquioxane (HSQ) | photonic crystal | negative tone resist | spin-on-glass (SOG) | Spin-on-glass (SOG) | Three-dimensional structure | Hydrogen silsesquioxane (HSQ) | Photonic crystal | Negative tone resist | Electron beam (EB) lithography
Journal Article
Journal of Photopolymer Science and Technology, ISSN 0914-9244, 2012, Volume 25, Issue 1, pp. 121 - 124
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2013, Volume 114, Issue 14, p. 144503
Proximity effect corrected e-beam lithography of hydrogen silsesquioxane on silicon on insulator was used to fabricate multi-channel silicon nanowire... 
IMPACT | PHYSICS, APPLIED | HYDROGEN SILSESQUIOXANE RESIST | TEMPERATURE | HSQ | BEAM LITHOGRAPHY | THICKNESS | Silicon | Research | Semiconductor-metal boundaries | Field-effect transistors | Analysis | Electric properties | Arrays | Semiconductor devices | High density | Drains | Nanomaterials | Nanowires | Devices
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 06/2014, Volume 121, pp. 142 - 146
The influences of different concentrations of NaCl in tetramethyl ammonium hydroxide (TMAH) developer on the electron beam lithography resolution of hydrogen... 
HSQ resist | Resist profile | High resolution | Electron beam lithography | TMAH/NaCl developer | PHYSICS, APPLIED | HYDROGEN SILSESQUIOXANE RESIST | NANOSCIENCE & NANOTECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC | COLLAPSE | TEMPERATURE | MEDIA | OPTICS | SCATTERING | Monte Carlo method | Computer simulation | Developers | Solubility | Resists | Nanostructure | Optimization | Three dimensional
Journal Article
2012 13th International Conference on Ultimate Integration on Silicon (ULIS), 03/2012, pp. 145 - 148
An initial top-down process of Germanium nanowires is developed in this work. The Silicon Nitride (Si 3 N 4 ) is used as a hard mask to obtain a stable surface... 
Nitride hard mask | Hydrogen Silsesquixane (HSQ) | Germanium nanowires | Electron-beam lithography
Conference Proceeding
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, ISSN 1071-1023, 12/2008, Volume 26, Issue 6, pp. 2049 - 2053
Performance of hydrogen silsesquioxane (HSQ) resist material with respect to the temperature during electron beam exposure was investigated. Electron beam... 
scanning electron microscopy | hydrogen silsesquioxane | Resist temperature | electron beam heating | electron beam lithography | organic compounds | atomic force microscopy | resists | PHYSICS, APPLIED | SENSITIVITY | CONTRAST | NANOSCIENCE & NANOTECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2011, Volume 7927
This paper reviews the development of hydrogen silsesquioxane nanostructures (sub-100nm) on a silicon platform. The effect of HSQ resist in thick (128nm thick... 
Development time | Scanning electron microscope (SEM) images | Electron beam lithography (EBL) | Hydrogen silsesquioxane (HSQ) | Methylisobutylketone (MIBK) | Platforms | Nanocomposites | Lithography | Resists | Nanomaterials | Silicon | Nanostructure | Deposition
Conference Proceeding
by Bi, KX and Liu, HZ and Chen, YQ and Luo, F and Shu, ZW and Lin, J and Liu, S and Liu, HW and Zeng, ZY and Dai, P and Zhu, MJ and Duan, HG
NANOTECHNOLOGY, ISSN 0957-4484, 07/2019, Volume 30, Issue 29
Layered semiconductors such as transition metal dichalcogenides (TMDs) with proper bandgaps complement the zero-bandgap drawback of graphene, demonstrating... 
TRANSITION | CONTACTS | PHYSICS, APPLIED | hydrogen silsesquioxane (HSQ) electron resists | short channel devices | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | large area preparation
Journal Article
Key Engineering Materials, ISSN 1013-9826, 12/2013, Volume 596, pp. 97 - 100
We calculated the hydrogen silsesquioxane (HSQ) resist profiles with different contrast developers (γ from 1.9 to 8.1) to reveal the effect of resist contrast... 
Resist profile | Hydrogen silsesquioxane (HSQ) resist | Contrast | Exposure dosage (D) | Energy deposition distribution (EDD) | Computer simulation | Developers | Simulation | Lithography | Energy distribution | Resists | Arrays | Deposition
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 2006, Volume 83, Issue 4, pp. 776 - 779
FinFET transistors are presented as promising candidates to extend CMOS lifetime. One major challenging technological step in the process fabrication of such... 
E-beam lithography | Hydrogen silsesquioxane resist | Multiple-gate transistors | HSQ | TMAH | FinFET transistors | multiple-gate transistors | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | ASPECT-RATIO | OPTICS | e-beam lithography | hydrogen silsesquioxane resist | ENGINEERING, ELECTRICAL & ELECTRONIC | Transistors | Anisotropy | Production processes
Journal Article
Journal of Photopolymer Science and Technology, ISSN 0914-9244, 2005, Volume 18, Issue 3, pp. 355 - 364
Positive 193 nm bilayer resists based on polysilsesquioxane are described. Fluoroalcohol is employed as an acid group instead of carboxylic acid because of its... 
bilayer resists | hydrogen bonding | 193 nm lithography | chemical amplification | dissolution kinetics | deprotection | silanol condensation | quartz crystal microbalance | fluoroalcohol
Journal Article
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, ISSN 1071-1023, 11/2006, Volume 24, Issue 6, pp. 3048 - 3054
Electron-beam exposed hydrogen silsesquioxane cross-linking chemistry is investigated by scanning transmission x-ray microscopy (STXM) and atomic force... 
ATOMIC-HYDROGEN | PHYSICS, APPLIED | FILMS | LINEWIDTH | PERFORMANCE | HSQ | NANOSCIENCE & NANOTECHNOLOGY | FABRICATION | BILAYER RESIST | LITHOGRAPHY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Photopolymer Science and Technology, ISSN 0914-9244, 2005, Volume 18, Issue 3, pp. 355 - 364
Journal Article
Vacuum, ISSN 0042-207X, 2005, Volume 77, Issue 2, pp. 117 - 123
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.