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Applied physics letters, ISSN 1077-3118, 2015, Volume 106, Issue 23, p. 232905
We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4-20 nm... 
THIN-FILMS | HFO2 | CRYSTALLIZATION | ZRO2 | PHYSICS, APPLIED | ZIRCONIA | HIGH-K DIELECTRICS | ATOMIC LAYER DEPOSITION | CAPACITORS | MONOCLINIC LATTICES | THIN FILMS | X-RAY DIFFRACTION | TITANIUM NITRIDES | MATERIALS SCIENCE | FERROELECTRIC MATERIALS | ORTHORHOMBIC LATTICES | HAFNIUM OXIDES
Journal Article
Applied physics letters, ISSN 1077-3118, 2011, Volume 99, Issue 10, pp. 102903 - 102903-3
Journal Article
Journal of applied physics, ISSN 1089-7550, 2011, Volume 110, Issue 11, pp. 114113 - 114113-5
Journal Article
ChemPhysChem, ISSN 1439-4235, 09/2015, Volume 16, Issue 13, pp. 2842 - 2848
Interfacing graphene with metal oxides is of considerable technological importance for modulating carrier density through electrostatic gating as well as for the design of earth... 
graphene oxide | NEXAFS | hafnium(IV) oxide | XPS | atomic layer deposition | STATES | FILMS | REDUCTION | ELECTRONIC-STRUCTURE RECOVERY | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | CHEMISTRY, PHYSICAL | ALD | Electrical engineering | Graphene | Graphite | Hafnium | Oxides | X-ray spectroscopy | Investigations
Journal Article
Applied physics letters, ISSN 1077-3118, 2005, Volume 86, Issue 13, pp. 132903 - 132903-3
Ternary oxides, Gd Sc O 3 , Dy Sc O 3 , and La Sc O 3 , deposited by pulsed laser deposition using ceramics targets of stoichiometric composition, were studied as alternative high- k gate dielectrics on (100) Si... 
CRYSTALLIZATION | ZRO2 | PHYSICS, APPLIED | GATE DIELECTRICS | STABILITY | LASER RADIATION | TRANSMISSION ELECTRON MICROSCOPY | PULSED IRRADIATION | GADOLINIUM COMPOUNDS | THIN FILMS | ENERGY BEAM DEPOSITION | X-RAY DIFFRACTION | STOICHIOMETRY | DYSPROSIUM COMPOUNDS | MATERIALS SCIENCE | AMORPHOUS STATE | LEAKAGE CURRENT | HAFNIUM OXIDES | SCANDIUM OXIDES | LANTHANUM COMPOUNDS | REFRACTIVE INDEX | HYSTERESIS | RUTHERFORD BACKSCATTERING SPECTROSCOPY | ELLIPSOMETRY | CERAMICS | SILICON OXIDES
Journal Article
Journal of applied physics, ISSN 1089-7550, 2015, Volume 118, Issue 7, p. 072006
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2006, Volume 100, Issue 4, p. 43708
.... This results in the formation of dangling Hf bonds in the oxide, which are saturated either by hafnium diffusion or Hf-Si bonds... 
DEFECTS | PHYSICS, APPLIED | HAFNIUM OXIDE | DIELECTRICS
Journal Article
Faraday discussions, ISSN 1364-5498, 2019, Volume 213, pp. 87 - 98
...Faraday Discussions Cite this: Faraday Discuss.,2 0 1 9 ,213,8 7 PAPER Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM... 
CHEMISTRY, PHYSICAL | PART I | SILICON-OXIDE | RRAM | MEMORY | HFOX | Memory devices | Stability | Random access memory | Variations | Hafnium oxide | Density | Switching | Electrodes | CMOS | Electrode materials | Materials engineering | Computation | Endurance
Journal Article
Ceramics International, ISSN 0272-8842, 06/2019, Volume 45, Issue 8, pp. 10691 - 10700
.... Result shows that GYO films exhibits excellent performance as gate dielectrics for metal-oxide-semiconductor (MOS... 
Magnetron sputtering | Band gap | High k gate dielectrics | Rare earth oxides | Thin film | THIN-FILMS | VOLTAGE | HAFNIUM OXIDE | ELECTRICAL-PROPERTIES | SILICON | MATERIALS SCIENCE, CERAMICS | TRANSISTORS | GROWTH | OPTIMIZATION | MICROSTRUCTURE | MODULATION
Journal Article